Flexo-photovoltaic effect in MoS2

Jiang, Jie; Chen, Zhizhong; Hu, Yang; Xiang, Yu; Zhang, Lifu; Wang, Yiping; Wang, G.-C.; Shi, Jian

doi:10.1038/s41565-021-00919-y

Cited by 163 publications

(145 citation statements)

References 56 publications

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“…Most of them exhibit metallic or semiconducting phases. In particular, semiconducting TMDs have been the object of increasing scientific interest in the last decade, due to their huge potential for applications in several fields, including electronics, optoelectronics, spintronics, valleytronics, chemical/environmental sensing, energy generation, and catalysis [2][3][4][5][6][7][8][9][10]. Molybdenum disulfide (MoS 2 ) is the most investigated among TMDs, due to the natural abundance and good chemical/mechanical stability of its 2H semiconductor phase under ambient conditions.…”

Section: Introductionmentioning

confidence: 99%

Multiscale Investigation of the Structural, Electrical and Photoluminescence Properties of MoS2 Obtained by MoO3 Sulfurization

et al. 2022

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In this paper, we report a multiscale investigation of the compositional, morphological, structural, electrical, and optical emission properties of 2H-MoS2 obtained by sulfurization at 800 °C of very thin MoO3 films (with thickness ranging from ~2.8 nm to ~4.2 nm) on a SiO2/Si substrate. XPS analyses confirmed that the sulfurization was very effective in the reduction of the oxide to MoS2, with only a small percentage of residual MoO3 present in the final film. High-resolution TEM/STEM analyses revealed the formation of few (i.e., 2–3 layers) of MoS2 nearly aligned with the SiO2 surface in the case of the thinnest (~2.8 nm) MoO3 film, whereas multilayers of MoS2 partially standing up with respect to the substrate were observed for the ~4.2 nm one. Such different configurations indicate the prevalence of different mechanisms (i.e., vapour-solid surface reaction or S diffusion within the film) as a function of the thickness. The uniform thickness distribution of the few-layer and multilayer MoS2 was confirmed by Raman mapping. Furthermore, the correlative plot of the characteristic A1g-E2g Raman modes revealed a compressive strain (ε ≈ −0.78 ± 0.18%) and the coexistence of n- and p-type doped areas in the few-layer MoS2 on SiO2, where the p-type doping is probably due to the presence of residual MoO3. Nanoscale resolution current mapping by C-AFM showed local inhomogeneities in the conductivity of the few-layer MoS2, which are well correlated to the lateral changes in the strain detected by Raman. Finally, characteristic spectroscopic signatures of the defects/disorder in MoS2 films produced by sulfurization were identified by a comparative analysis of Raman and photoluminescence (PL) spectra with CVD grown MoS2 flakes.

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Section: Introductionmentioning

confidence: 99%

Multiscale Investigation of the Structural, Electrical and Photoluminescence Properties of MoS2 Obtained by MoO3 Sulfurization

et al. 2022

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“…As the other possible origins of the photovoltaic effect, i.e., strain‐gradient‐induced flexoelectricity, anisotropic absorption, and difference in bandgap, lead the opposite I sc at the two TBs, they can be excluded (Figure S12, Supporting Information). [ 44 ] Furthermore, as strain is fully relaxed during the transfer process from polymers to the SiO 2 substrate, the possibility of piezoelectricity is excluded. In addition to the ferroelectricity‐driven I sc , we confirmed the ferroelectric polarization using in‐plane PFM ( Figure ).…”

Section: Ferroelectricity and Photovoltaic Effectmentioning

confidence: 99%

Ferroelastic–Ferroelectric Multiferroicity in van der Waals Rhenium Dichalcogenides

et al. 2022

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2D multiferroics with combined ferroic orders have gained attention owing to their novel functionality and underlying science. Intrinsic ferroelastic–ferroelectric multiferroicity in single‐crystalline van der Waals rhenium dichalcogenides, whose symmetries are broken by the Peierls distortion and layer‐stacking order, is demonstrated. Ferroelastic switching of the domain orientation and accompanying anisotropic properties is achieved with 1% uniaxial strain using the polymer encapsulation method. Based on the electron localization function and bond dissociation energy of the Re–Re bonds, the change in bond configuration during the evolution of the domain wall and the preferred switching between the two specific orientation states are explained. Furthermore, the ferroelastic switching of ferroelectric polarization is confirmed using the photovoltaic effect. The study provides insights into the reversible bond‐switching process and potential applications based on 2D multiferroicity.

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“…Luo et al ( 12 ) developed a phase transition–modulated WSe 2 /VO 2 photodetector, which dynamically switched from a type II heterojunction to a Schottky junction across the MIT of VO 2 , resulting in both high detectivity and large responsivity in the dual working modes. Most recently, Jiang et al ( 14 ) demonstrated that the flexoelectricity of MoS 2 can be effectively activated through the strain-gradient engineering induced by the structural phase transition of VO 2 , thus achieving an ultrahigh bulk photovoltaic coefficient of MoS 2 . In this regard, wafer-scale VO 2 films are highly desirable for the heterogeneous integration of multifunctional arrayed smart devices.…”

Section: Introductionmentioning

confidence: 99%