Flexoelectricity in barium strontium titanate thin film

Kwon, Seol Ryung; Huang, Wenbin; Shu, Longlong; Yuan, Fuh-Gwo; Maria, Jon Paul; Jiang, Xiaoning

doi:10.1063/1.4898139

Cited by 45 publications

(26 citation statements)

References 29 publications

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“…BST thin films can be deposited by different methods such as hydrothermal, pulsed laser deposition, metal organic chemical vapor deposition (MOCVD), chemical solution deposition method and sol-gel. Among these methods, we chose radio frequency magnetron sputtering technique due to its industrial process compatibility through ease of implementation, superior compositional reproducibility, medium deposition rate, uniform deposition over large area with additional interest in mass production [22][23][24]. However, transferring the target stoichiometry to the substrate remains a challenge with on-axis RF-magnetron sputtering due to re-sputtering effects.…”

Section: Methodsmentioning

confidence: 99%

Textured BST Thin Film on Silicon Substrate: Preparation and Its Applications for High Frequency Tunable Devices

Zhang¹,

Huang²,

Yang³

et al. 2019

Coatings and Thin-Film Technologies

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The dielectric properties of Ba 0.5 Sr 0.5 TiO 3 (BST) thin films are sensitive to the relative crystallographic orientation of the films. LaNiO 3 (LNO) and MgO were deposited as buffer layer on Si substrate before BST. The effect of buffer layer such as LNO, MgO and MgO/LNO bilayer on the microstructure and dielectric properties of BST were extensively investigated. The preferred (100) orientation of LNO by radio frequency (RF) magnetron sputtering was dominated by the substrate temperature and highly (100)-oriented LNO thin films were grown on Si substrates at 300°C. The oriented (100) growth of sputtered BST thin films was strongly affected by the orientation of LNO thin films and the tunability of BST thin film was greatly improved with the insertion of (100)-textured LNO buffer layer. In addition, MgO, as a buffer layer, was deposited by RF magnetron sputtering. The results show that the crystallization of BST was also enhanced by the insertion of MgO buffer layer, which enhances the oriental growth of BST along (100). Also, the tunability of the BST thin films was improved and the dielectric loss greatly decreased. Finally, CPW with BST/MgO multilayer was fabricated and the scattering (S) parameters were tested.

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Section: Methodsmentioning

confidence: 99%

Textured BST Thin Film on Silicon Substrate: Preparation and Its Applications for High Frequency Tunable Devices

Zhang¹,

Huang²,

Yang³

et al. 2019

Coatings and Thin-Film Technologies

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“…Due to large flexoelectric coefficient of BST bulk ceramics, the flexoelectricity in BST thin film was studied. 63 Also, from the principle, if the deformation applied to one structure is larger, the strain gradient would be larger. 64 Then the flexoelectric response is stronger.…”

Section: Thin Filmsmentioning

confidence: 99%

Flexoelectricity in dielectrics: Materials, structures and characterizations

Huang

et al. 2018

J. Adv. Dielect.

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Flexoelectricity in dielectrics suggests promising smart structures for sensors, actuators and transducers. In this review, dielectric materials, structures and the associated flexoelectric characterization methods are presented. First of all, we review structures and methods to measure different flexoelectric coefficients, including [Formula: see text], etc., via direct or converse flexoelectric effect. The flexoelectric materials in the form of bulk, thin films and 2D materials and the reported flexoelectric properties of these dielectrics will then be discussed. Semiconductor materials and the associated flexoelectric studies will also be reviewed. The progress of flexoelectric device study will next be presented, followed by the flexoelectricity research challenges and future trend.

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“…It was argued that atomistic simulations should be used to determine the accurate properties at the nano scales. However, for some other materials with giant flexoelectric coefficients and low elastic moduli [10,12], the effective bending rigidity as defined in [21] would become negative when the beam thickness is less than several micrometers, which appears to be questionable. In contrast, the effective bending rigidity G E in the present model remains positive under the CCF condition, independent of the beam thickness.…”

Section: Ccf Conditionmentioning

confidence: 99%

Electromechanical coupling in piezoelectric nanobeams due to the flexoelectric effect

Zhou

Yang

et al. 2017

Smart Mater. Struct.

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The flexoelectric effect is a coupling of polarization and strain gradient, which exists in a wide variety of materials and may lead to strong size-dependent properties at the nanoscale. Based on an extension to the classical beam model, this paper investigates the electromechanical coupling response of piezoelectric nanobeams with different electrical boundary conditions including the effect of flexoelectricity. The electric Gibbs free energy and the variational principle are used to derive the governing equations with three types of electrical boundary conditions. Closed-form solutions are obtained for static bending of cantilever beams. The results show that the normalized effective stiffness increases with decreasing beam thickness in the open circuit electrical boundary conditions with or without surface electrodes. The induced electric potential due to the flexoelectric effect is obtained under the open circuit conditions, which may be important for sensing or energy harvesting applications. An intrinsic thickness depending on the material properties is identified for the maximum induced electric potential. The present results also show that flexoelectricity has a more significant effect on the electroelastic responses than piezoelectricity at the nanoscale. Our analysis in the present study can be useful for understanding of the electromechanical coupling in nanobeams with flexoelectricity.

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Flexoelectricity in barium strontium titanate thin film

Cited by 45 publications

References 29 publications

Textured BST Thin Film on Silicon Substrate: Preparation and Its Applications for High Frequency Tunable Devices

Textured BST Thin Film on Silicon Substrate: Preparation and Its Applications for High Frequency Tunable Devices

Flexoelectricity in dielectrics: Materials, structures and characterizations

Electromechanical coupling in piezoelectric nanobeams due to the flexoelectric effect

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