Flicker noise of hot holes in silicon at 78 K

Abstract

From flicker-noise data versus applied voltage and current-voltage measurements on a p'~rpplanar silicon device at 78 K we calculated Hooge's parameter a for flicker noise as a function of the electric field strength E 0 applied along the (1, 0, 0) crystallographic direction. We found that a (E0) decreases with increasing field. ForE0~3 X i0 4 V/rn the following relation holds:is the field where the drift velocity of the light holes is within 10% of the sound velocity. This particular a (E0) dependence indicates the connection between a(Eo) and the scattering of light holes by acoustic phonons.The origin of flicker or 1/f noise is still being deWe used p+irp+ planar silicon devices. The room ternbated. There is substantial evidence, however, in supperature resistivity of the ir-region was 100~m. The port of Hooge's view that flicker noise is a bulk effect, basic material was obtained from Wacker Chemitronic. and that for a homogeneous conductor the followingThe devices were provided with plane parallel conrelation holds [1,2]: tacts with a cross-sectional area of 10-6 m 2 the con-/ 2 /~-~tact spacing was 40 pm. The field was applied along the (1, 0, 0> crystallographic direction of silicon. where G is the conductance, N the total number ofIn fig. 1 we show the mobility p and Hooge's paramfree charge carriers, f the frequency and a a parameter.eter a as a function of the electric field strength applied In a previous paper [3] we reported on the influence along the (1, 0, 0> crystallographic direction in silicon that high electric fields have on the flicker noise of at 78 K. The values for the mobility were calculated electrons in silicon. The electric field was applied along from a measurement of the current-voltage characthe (1, 1, 1 mechanism.Note that a, which is a measure of the magnitude ofWe now report results obtained on holes in silicon, the flicker noise, is independent of the field at low 57

1/f noise and nonlinear effects in thin metal films

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