2014
DOI: 10.7567/jjap.53.031602
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Floating-gate type organic memory device with organic insulator film of plasma polymerized styrene

Abstract: Plasma polymerized styrene (ppS) thin films were prepared and used as gate insulator and tunneling layer in a floating-gate type organic memory device. To investigate feasibility of the ppS thin film for application in non-volatile organic memory, an organic thin film transistor (OTFT) and a floating-gate type organic memory device were fabricated. Current–voltage (I–V) characteristics of the OTFT and floating-gate type organic memory device were comparatively investigated, and hysteresis in the I–V characteri… Show more

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Cited by 6 publications
(2 citation statements)
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“…The P/E input pulse amplitude and width, and the ε r and film thickness of the insulator were summarized in Table II. [22][23][24][25][26][27][28][29][30][31][32] The measurements were carried out under a P/E input pulse of ±3.4 V/10 ms for 10 4 s. The input pulse was applied first, then I D -V G characteristics were measured to extract the V TH . The extrapolated MW of 0.25 V for 10 years data retention was obtained, which is 36% of the initial MW.…”
Section: Resultsmentioning
confidence: 99%
“…The P/E input pulse amplitude and width, and the ε r and film thickness of the insulator were summarized in Table II. [22][23][24][25][26][27][28][29][30][31][32] The measurements were carried out under a P/E input pulse of ±3.4 V/10 ms for 10 4 s. The input pulse was applied first, then I D -V G characteristics were measured to extract the V TH . The extrapolated MW of 0.25 V for 10 years data retention was obtained, which is 36% of the initial MW.…”
Section: Resultsmentioning
confidence: 99%
“…For decades, most works to develop plastic electronics have mainly focused on organic semiconductor materials . The device performance, however, has not yet been sufficiently good to meet future requirements for practical applications in next‐generation electronics . Semiconductor nanowires (NWs) are expected to replace the field‐effect transistor (FET) channel with their unique properties of charge carrier transport and can be easily implemented onto plastic substrates using both the bottom‐up and top‐down approaches at low process temperature, enabling their use as potential solutions for plastic electronics.…”
Section: Introductionmentioning
confidence: 99%