Floating Ni Capping for High-Mobility p-Channel SnO Thin-Film Transistors

Shin, Mingyu; Bae, Kang-Hwan; Cha, Hyun-Seok; Jeong, Hwan-Seok; Kim, Dae-Hwan; Kwon, Hyuck‐In

doi:10.3390/ma13143055

Cited by 10 publications

(3 citation statements)

References 46 publications

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“…In this case, I ph is suppressed because the space available for carrier generation is limited and the channel resistance is high. [19][20][21] Reducing the carrier concentration (n) in the channel layer of TFT based UVPDs, or using a Schottky metals (e.g., Pt, 22,23) Au, 24) and Ni 25) ), or p-type MOSs (e.g., NiO, [26][27][28] MgO, 29) and Cr 2 O 3 30) ) as a capping layer (CL) on the channel surface (i.e. the back channel) have been demonstrated to mitigate the trade-off between I dark and I ph .…”

Section: Introductionmentioning

confidence: 99%

Using thin-film transistor with thick oxygen-doped Si–Zn–Sn–O channel and patterned Pt/NiO capping layer to enhance ultraviolet light sensing performance

Ko,

Wang,

Chen

et al. 2024

Jpn. J. Appl. Phys.

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To improve the photodetection performance of thin-film transistor (TFT)-based ultraviolet photodetectors (UVPDs), using thick channel layers to promote photocurrent (Iph) or using thin channel layers to suppress dark current (Idark) is a typical trade-off. In this work, UVPDs based on oxygen-doped Si-Zn-Sn-O (SZTO) TFT with a stack of Pt/NiO capping layers (CLs) to release the trade-off between Idark and Iph are demonstrated. The Pt CL creates a wide depletion region in the channel layer to allow the use of thick channels, but still maintains low Idark, while the NiO CL forms a pn heterojunction to provide additional photogenerated carriers and enhance Iph under UV irradiation. Experimental results show that the proposed 95-nm-thick oxygen-doped SZTO TFT with a stack Pt/NiO dual CLs exhibits excellent photoresponsivity of 2026 A/W and photosensitivity of 9.3×107 A/A, which are about 76× and 82.5× higher than the conventional 45-nm-thick SZTO TFT under 275 nm UV irradiation.

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Section: Introductionmentioning

confidence: 99%

Using thin-film transistor with thick oxygen-doped Si–Zn–Sn–O channel and patterned Pt/NiO capping layer to enhance ultraviolet light sensing performance

Ko,

Wang,

Chen

et al. 2024

Jpn. J. Appl. Phys.

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“…Tin monoxide (SnO) is considered one of the most promising p-type oxide semiconductors, because of its spherical Sn 5s orbitals which are comparable with the energy levels of O 2p orbitals. They can form the pseudo-closed ns 2 orbitals in SnO through the hybridization and delocalization to provide an effective path for hole conduction, giving it a small m h * [4,5]. Furthermore, SnO with a large direct optical bandgap (2.5-3.4 eV) makes it an excellent hole conduction candidate for transparent electronics [6].…”

Section: Introductionmentioning

confidence: 99%

Enhanced performance of p-type SnO _x thin film transistors through defect compensation

zhang¹,

Hong²,

Qin³

et al. 2022

J. Phys.: Condens. Matter

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Due to the unique outermost orbitals of Sn, hole carriers in tin monoxide (SnO) possess small effective mass and high mobility among oxide semiconductors, making it a promising p-channel material for thin film field-effect transistors (TFTs). However, the Sn vacancy induced field-effect mobility deterioration and threshold voltage (Vth) shift in experiments greatly limit its application in complementary metal-oxide-semiconductor transistors (CMOS). In this study, the internal mechanism of vacancy defect compensation by aluminium (Al) doping in SnOx film is studied combining experiments with the density functional theory (DFT). The doping is achieved by an argon (Ar) plasma treatment of Al2O3 deposited onto the SnOx film, in which the Al2O3 provides both the surface passivation and Al doping source. Experimental results show a wide Vth modulation range (6.08 to −19.77 V) and notable mobility enhancement (11.56 cm2V-1s-1) in the SnOx TFTs after the Al doping by Ar plasma. DFT results reveal that the most possible positions of Al in SnO and SnO2 segments are the compensation to Sn vacancy and interstitial. The compensation will create an n-type doping effect and improve the hole carrier transport by reducing the hole effective mass (mh*), which is responsible for the device performance variation, while the interstitial in the SnO2 segment can hardly affect the valence transport of the film. The defect compensation is suitable for the electronic property modulation of SnO towards the high-performance CMOS application.

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“…In our previous report, we demonstrated that the formation of a Ni capping layer can increase the field-effect mobility ( μ FE ) of p-channel SnO TFTs. This was attributed to the changed vertical electric field distribution and increase in the hole concentration inside SnO [ 34 ]. In this study, we compared the electrical performance and stability of p-channel SnO TFTs consisting of capping layers with different metals (Al, Ni, Pt, and Cr) to thoroughly understand the effects of a metal capping layer on p-channel SnO TFTs.…”

Section: Introductionmentioning

confidence: 99%

Effects of Capping Layers with Different Metals on Electrical Performance and Stability of p-Channel SnO Thin-Film Transistors

et al. 2020

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In this study, the effects of capping layers with different metals on the electrical performance and stability of p-channel SnO thin-film transistors (TFTs) were examined. Ni- or Pt-capped SnO TFTs exhibit a higher field-effect mobility (μFE), a lower subthreshold swing (SS), a positively shifted threshold voltage (VTH), and an improved negative-gate-bias-stress (NGBS) stability, as compared to pristine TFTs. In contrast, Al-capped SnO TFTs exhibit a lower μFE, higher SS, negatively shifted VTH, and degraded NGBS stability, as compared to pristine TFTs. No significant difference was observed between the electrical performance of the Cr-capped SnO TFT and that of the pristine SnO TFT. The obtained results were primarily explained based on the change in the back-channel potential of the SnO TFT that was caused by the difference in work functions between the SnO and various metals. This study shows that capping layers with different metals can be practically employed to modulate the electrical characteristics of p-channel SnO TFTs.

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Floating Ni Capping for High-Mobility p-Channel SnO Thin-Film Transistors

Cited by 10 publications

References 46 publications

Using thin-film transistor with thick oxygen-doped Si–Zn–Sn–O channel and patterned Pt/NiO capping layer to enhance ultraviolet light sensing performance

Using thin-film transistor with thick oxygen-doped Si–Zn–Sn–O channel and patterned Pt/NiO capping layer to enhance ultraviolet light sensing performance

Enhanced performance of p-type SnO _x thin film transistors through defect compensation

Effects of Capping Layers with Different Metals on Electrical Performance and Stability of p-Channel SnO Thin-Film Transistors

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Floating Ni Capping for High-Mobility p-Channel SnO Thin-Film Transistors

Cited by 10 publications

References 46 publications

Using thin-film transistor with thick oxygen-doped Si–Zn–Sn–O channel and patterned Pt/NiO capping layer to enhance ultraviolet light sensing performance

Using thin-film transistor with thick oxygen-doped Si–Zn–Sn–O channel and patterned Pt/NiO capping layer to enhance ultraviolet light sensing performance

Enhanced performance of p-type SnO x thin film transistors through defect compensation

Effects of Capping Layers with Different Metals on Electrical Performance and Stability of p-Channel SnO Thin-Film Transistors

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Enhanced performance of p-type SnO _x thin film transistors through defect compensation