Nonvolatile optoelectronic memories based on organic–inorganic hybrid perovskites have appeared as powerful candidates for next-generation soft electronics. Here, ambipolar SnO transistor-based nonvolatile memories with multibit memory behavior (11 storage states, 120 nC state–1) and ultralong retention time (>105 s) are demonstrated for which an Al2O3/two-dimensional Ruddlesden–Popper perovskite (2D PVK) heterostructure dielectric architecture is employed. The unique storage features are attributed to suppressed gate leakage by Al2O3 layer and hopping-like ionic transport in 2D PVK with varying activation energy under different light intensities. The photoinduced field-effect mechanism enables top-gated transistor operation under illumination, which would not be achieved under dark. As a result, the device exhibits remarkable photoresponsive characteristics, including ultrahigh specific detectivity (2.7 × 1015 Jones) and broadband spectrum distinction capacity (375–1064 nm). This study offers valuable insight on the PVK-based dielectric engineering for information storage and paves the way toward multilevel broadband-response optoelectronic memories.

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Non‐destructive and reversible modulations of polarity and carrier concentration in transistors are essential for complementary devices. The fabricated multi‐gated WSe2 devices obtain dynamic electrostatic field induced electrically configurable functions and demonstrate as diode with high rectification ratio of 4.1 × 105, as well as n‐ and p‐type inverter with voltage gain of 19.9 and 12.1, respectively. Benefiting from the continuous band alignment induced modulation of channel underneath the dual gates, the devices exhibit high‐performance photodetection in wide spectral range. The devices yield high photo‐responsivity (5.16 A W−1) and large Ilight/Idark ratio (1 × 105). Besides, the local gate fields accelerate the separation of photo‐induced carriers, leading to fast response without persistent current. This strategy takes the advantage of the simplified design and continues to deliver integrated circuits with high density. The superior electrical and photodetection characteristics exhibit great potency in the domain of future optoelectronics.

Due to the unique outermost orbitals of Sn, hole carriers in tin monoxide (SnO) possess small effective mass and high mobility among oxide semiconductors, making it a promising p-channel material for thin film field-effect transistors (TFTs). However, the Sn vacancy induced field-effect mobility deterioration and threshold voltage (Vth) shift in experiments greatly limit its application in complementary metal-oxide-semiconductor transistors (CMOS). In this study, the internal mechanism of vacancy defect compensation by aluminium (Al) doping in SnOx film is studied combining experiments with the density functional theory (DFT). The doping is achieved by an argon (Ar) plasma treatment of Al2O3 deposited onto the SnOx film, in which the Al2O3 provides both the surface passivation and Al doping source. Experimental results show a wide Vth modulation range (6.08 to −19.77 V) and notable mobility enhancement (11.56 cm2V-1s-1) in the SnOx TFTs after the Al doping by Ar plasma. DFT results reveal that the most possible positions of Al in SnO and SnO2 segments are the compensation to Sn vacancy and interstitial. The compensation will create an n-type doping effect and improve the hole carrier transport by reducing the hole effective mass (mh*), which is responsible for the device performance variation, while the interstitial in the SnO2 segment can hardly affect the valence transport of the film. The defect compensation is suitable for the electronic property modulation of SnO towards the high-performance CMOS application.

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