2010
DOI: 10.1007/s00339-010-6146-6
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Flow pattern defects in germanium-doped Czochralski silicon crystals

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Cited by 3 publications
(1 citation statement)
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“…On the one hand, the particle distributions of the experimental CZ and NCZ polish wafers were tested using an SP2 device. On the other hand, the particle type (COPs or large dislocation particles (LDPs)) was tested using the flow pattern defect (FPD) technique [17,18] such that the samples were vertically immersed and etched in the Secco etchant (50%HF:0.15 mol/LK 2 Cr 2 O 7 = 2:1) after polishing treatment. The morphology of the FPDs was observed using an optical microscope.…”
Section: Cops and Fpds Analysis Of Polish Wafermentioning
confidence: 99%
“…On the one hand, the particle distributions of the experimental CZ and NCZ polish wafers were tested using an SP2 device. On the other hand, the particle type (COPs or large dislocation particles (LDPs)) was tested using the flow pattern defect (FPD) technique [17,18] such that the samples were vertically immersed and etched in the Secco etchant (50%HF:0.15 mol/LK 2 Cr 2 O 7 = 2:1) after polishing treatment. The morphology of the FPDs was observed using an optical microscope.…”
Section: Cops and Fpds Analysis Of Polish Wafermentioning
confidence: 99%