“…Based on the aforementioned analysis, herein, using the widely adopted ZnO as the photoactivated sensing material, ,, we have compared the NO 2 response characteristics under both CU and PULM modes. As present ZnO did not undergo sophisticated morphology/defect/heterostructure engineering, − or noble metal nanoparticle decoration, the response to 20 ppb NO 2 at RT (25 °C) under the optimized CU mode (365 nm UV light, 1.8 mW/cm 2 ) is only 1.9, while the response of the same device could be drastically boosted to 131.3 under PULM mode (UV-off envelope), which is comparable to or better than the state-of-the-art ZnO chemiresistors prepared via morphology/defect engineering or heterostructure coupling. ,− The limit of detection (LoD) of the chemiresistor could be noticeably reduced from 2.6 ppb (CU mode) to 0.8 ppb (PULM mode), which is much lower than the annual average standard of 53 ppb recommended by the US Environmental Protection Agency (EPA) and raises the hope of a real application of semiconductor chemiresistor in ambient air quality monitoring, which has strict requirements on high response for the trace target gas . Besides NO 2 , the response of the ZnO chemiresistor to trace H 2 S and trimethylamine (TMA), as well as the response of 2D MoSe 2 chemiresistor to NO 2 , could also be significantly amplified by PULM, implying a broad applicability of the present strategy for boosting the electrical response of RT chemiresistors toward trace (ppb-level) target gases.…”