Fluctuation-Free Electron Emission from Non-Formed Metal-Insulator-Metal (MIM) Cathodes Fabricated by Low Current Anodic Oxidation

Kusunoki, Toshiaki; Suzuki, Mutsumi; Sasaki, Susumu; Yaguchi, Toshie; Aida, Toshiyuki

doi:10.1143/jjap.32.l1695

Cited by 49 publications

(16 citation statements)

References 9 publications

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“…MIM structures based on alumina were reported to have fluctuation-free electron emission although the efficiency was low. 6 In order to improve their performance, it is essential to control the alumina layer structure and thickness. 7 We have reported the fabrication of ultrathin well-ordered alumina films through oxidation of Cu-9%Al(111) single crystals.…”

Section: Introductionmentioning

confidence: 99%

A work function study of ultrathin alumina formation on Cu‐9%Al(111) surface

Song¹,

Yoshitake²

2006

Surface & Interface Analysis

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We studied work function changes during oxidation of Cu-9%Al(111) surfaces at 900 and 670 K as a function of oxygen exposure in situ using ultraviolet photoelectron spectroscopy and Kelvin probe. The results showed that work function first decreased by 0.51 eV after 256 L O 2 exposure at 900 K, and then remained unchanged upon further oxygen uptake. The formation of the interfacial dipole layer was the main factor that determined work function and XPS binding energy shifts of Al 2 O 3 energy levels at 900 K. The changes of work function and contact potential difference for amorphous Al 2 O 3 formation at 670 K were similar to their trends at 900 K. The oxide over-layer structure showed little influence on the work function of the Al 2 O 3 /Cu-9%Al(111) system.

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Section: Introductionmentioning

confidence: 99%

A work function study of ultrathin alumina formation on Cu‐9%Al(111) surface

Song¹,

Yoshitake²

2006

Surface & Interface Analysis

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“…In 1960, Mead proposed the tunnel cathode. [6][7][8][9] The Malter cathode was an early attempt to develop a cold cathode. Electrons tunnel from the base metal electrode through a triangular potential barrier at the base metal-insulator interface into the conduction band of the insulator.…”

Section: Introductionmentioning

confidence: 99%

Defect conduction bands, localization, and temperature-dependent electron emission from Al–Al2O3–Au diodes

Hickmott

2010

Journal of Applied Physics

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Surface plasmon polariton enhanced electroluminescence and electron emission from electroformed Al-Al2O3-Ag diodes Surface plasmon polariton-assisted electron emission and voltage-controlled negative resistance of Al -Al 2 O 3 -Au diodesThe temperature dependence of several phenomena connected with voltage-controlled negative resistance ͑VCNR͒ of Al-Al 2 O 3 -Au diodes has been measured between 200 and 300 K. These include the current-voltage ͑I-V͒ characteristics, electroluminescence ͑EL͒, and electron emission into vacuum ͑EM͒ of diodes with 12-20 nm of anodic Al 2 O 3 . There is an abrupt decrease in EM by 3 orders of magnitude as temperature decreases from 285 to 280 K. EM recovers to the same magnitude as at 300 K at ϳ260 K and is nearly constant between 260 and 200 K. The lower temperature at which EM recovers depends on the anodizing electrolyte. EM is decoupled from the major conduction mechanism because the voltage for maximum current of the I-V curve and the voltage threshold for EL are nearly constant over the same temperature range. A model is proposed in which defect levels of oxygen vacancies form two defect conduction bands in amorphous Al 2 O 3 . The concentration of oxygen vacancies is estimated from measurements of polarization of Al-Al 2 O 3 -Au diodes that do not break down to form VCNR in their I-V characteristics. EM at high and low temperatures is through defect conduction bands. Suppression of EM in the intermediate temperature range is due to localization of electrons caused by the irregular potential present when defect centers in the lower defect conduction band are nearly fully occupied. EM shows a temperature dependent metal-nonmetal transition while the conduction current does not.

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“…1 Alumina is a wide gap insulating material and anodically oxidized alumina grown on polycrystalline aluminium has been used in MIM structures. 2 The growth of Al 2 O 3 thin films on Ni-Al alloys has been studied widely over the past decade. 3 -5 It is known that 5Å of well-ordered alumina thin film can be prepared by oxidation of an NiAl(110) surface.…”

Section: Introductionmentioning

confidence: 99%

X‐ray photoelectron spectroscopic analysis of growth and thermal stability of palladium ultra thin films on alumina/NiAl(110)

Song

Yoshitake

Lay

2004

Surface & Interface Analysis

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We have studied the growth and thermal stability of Pd ultra-thin films on Al 2 O 3 /NiAl(110) in situ using x-ray photoelectron spectroscopy. The results showed that Pd grew in a nearly layer-by-layer manner on the Al 2 O 3 /NiAl (110) surface at a deposition rate of 0.2Å/min. No strong interaction between the Pd over-layer and the substrate was observed during initial growth. After high-temperature treatments, Pd diffused into the substrate and the alumina layer thickness increased significantly. Palladium served as a catalyst for this reaction when the temperature was lower than 570 K; PdO formed when the temperature was higher than 670 K.

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Fluctuation-Free Electron Emission from Non-Formed Metal-Insulator-Metal (MIM) Cathodes Fabricated by Low Current Anodic Oxidation

Cited by 49 publications

References 9 publications

A work function study of ultrathin alumina formation on Cu‐9%Al(111) surface

A work function study of ultrathin alumina formation on Cu‐9%Al(111) surface

Defect conduction bands, localization, and temperature-dependent electron emission from Al–Al2O3–Au diodes

X‐ray photoelectron spectroscopic analysis of growth and thermal stability of palladium ultra thin films on alumina/NiAl(110)

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