Fluctuations of the Au-Si(100) Schottky barrier height

Palm, Herbert; Arbes, M.; Schulz, M.

doi:10.1103/physrevlett.71.2224

Cited by 134 publications

(69 citation statements)

References 13 publications

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“…Experiments with BEEM permit the direct imaging of SB height¯uctuations, as has been shown by Palm et al [15,16] on the Au/Si interface ( Fig. 1), or the identi®cation of dierent barriers on inhomogeneous ®lms [18,19].…”

Section: Experimental Observationsmentioning

confidence: 80%

“…However, these attempts are not comparable with BEEM capabilities, where nanometer-sized¯uctuations on the SB have been measured (e.g., see Fig. 1 obtained by Palm et al [15,16]). Furthermore, BEEM has also been recognized for its great potential to analyze other processes in the experiment, that are interesting both from a fundamental and a practical point of view.…”

Section: Introductionmentioning

confidence: 75%

“…This is estimated to correspond to interface electric ®elds of %10 3 V/cm and %10 5 V/cm, respectively. (c) Quantitative analysis showing 24 AE 10 meV change between low and high doping samples (from [15,16]). …”

Section: Introductionmentioning

confidence: 99%

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Theory of ballistic electron emission microscopy

Andrés

García‐Vidal

Reuter

et al. 2001

Progress in Surface Science

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The present status of theories for interpreting experimental ballistic electron emission microscopy (BEEM) data is reviewed. Current formalisms may be divided into two broad classes: one-electron theories, where carriers do not exchange energy with other excitations in the solid, and scattering approaches, where such losses are considered. While the former theories have been formulated with the help of Green's functions (GFs), the latter have relied more on simulation by Monte-Carlo techniques. For the one-electron approach, we discuss why the originally suggested free propagation of carriers (e.g., ballistic electrons) does not oer a consistent interpretation of the experimental database and should be replaced instead by considering the coherent propagation of electrons interacting with the periodic potential in the metal base. Bridging towards the scattering formalisms, it is shown how GFs incorporating a complex self-energy are still a feasible approach, when only a single inelastic source of scattering (e.g., electron±electron (e±e) interaction) is operative. Within this one-electron scheme, the importance of an accurately computed transmission coecient at the metal-semiconductor interface is stressed, when aiming to obtain absolute BEEM currents. Analyzing results from scattering techniques, it is argued that this coecient should be modi®ed to take into account the back-injection of electrons from the semiconductor into the metal. A general expression for BEEM currents is given that can be used to simulate results in real-space, reciprocal-space or energy-space (spectroscopy with BEEM). Some experimental results are discussed in relation to the theories presented. Ó

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Section: Experimental Observationsmentioning

confidence: 80%

Section: Introductionmentioning

confidence: 75%

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Theory of ballistic electron emission microscopy

Andrés

García‐Vidal

Reuter

et al. 2001

Progress in Surface Science

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“…Palm et al mapped the Schottky barrier height of Au/ Si(001) by taking 12 BEEM images while varying the tunnelling voltage from 0.5 V to 1.2 V. The BEEM current for each pixel was fit to the BEEM model to extract the Schottky barrier height, generating a spatial map. 38 Gaussian like distributions, one for cobalt and the other for gold. 41 However, very little BEEM work has been preformed for the tungsten silicon interface.…”

Section: Introductionmentioning

confidence: 99%

Nanoscale mapping of the W/Si(001) Schottky barrier

Durcan

Balsano

LaBella

2014

Journal of Applied Physics

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The W/Si(001) Schottky barrier was spatially mapped with nanoscale resolution using ballistic electron emission microscopy (BEEM) and ballistic hole emission microscopy (BHEM) using n-type and p-type silicon substrates. The formation of an interfacial tungsten silicide is observed utilizing transmission electron microscopy and Rutherford backscattering spectrometry. The BEEM and BHEM spectra are fit utilizing a linearization method based on the power law BEEM model using the Prietsch Ludeke fitting exponent. The aggregate of the Schottky barrier heights from n-type (0.71 eV) and p-type (0.47 eV) silicon agrees with the silicon band gap at 80 K. Spatially resolved maps of the Schottky barrier are generated from grids of 7225 spectra taken over a 1 lm Â 1 lm area and provide insight into its homogeneity. Histograms of the barrier heights have a Gaussian component consistent with an interface dipole model and show deviations that are localized in the spatial maps and are attributed to compositional fluctuations, nanoscale defects, and foreign materials. V C 2014 AIP Publishing LLC. [http://dx

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“…This mode of BEEM has been successfully applied to study transport across various M/S interfaces and probing the spatial homogeneity of transport across such interfaces [1,6,[14][15][16][17]. BEEM can also be operated in a reverse mode, known as the reverse BEEM (R-BEEM), that is realized by applying a positive tip bias [12] as shown in Fig.…”

Section: Experimental Techniquementioning

confidence: 99%

Hot electron attenuation of direct and scattered carriers across an epitaxial Schottky interface

Parui

Klandermans

Venkatesan

et al. 2013

J. Phys.: Condens. Matter

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Hot electron transport of direct and scattered carriers across an epitaxial NiSi 2 /n-Si(111) interface, for different NiSi 2 thickness, is studied using Ballistic Electron Emission Microscopy (BEEM).We find the BEEM transmission for the scattered hot electrons in NiSi 2 to be significantly lower than that for the direct hot electrons, for all thicknesses. Interestingly, the attenuation length of the scattered hot electrons is found to be twice larger than that of the direct hot electrons. The lower BEEM transmission for the scattered hot electrons is due to inelastic scattering of the injected hot holes while the larger attenuation length of the scattered hot electrons is a consequence of the differences in the energy distribution of the injected and scattered hot electrons and the increasing attenuation length, at lower energies, of the direct hot electrons in NiSi 2 .

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Fluctuations of the Au-Si(100) Schottky barrier height

Cited by 134 publications

References 13 publications

Theory of ballistic electron emission microscopy

Theory of ballistic electron emission microscopy

Nanoscale mapping of the W/Si(001) Schottky barrier

Hot electron attenuation of direct and scattered carriers across an epitaxial Schottky interface

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