Fluence dependant formation of β-SiC by ion implantation and thermal annealing

Poudel, Prakash; Rout, B.; Diercks, David R.; Strzhemechny, Y. M.; McDaniel, F. D.

doi:10.1007/s00339-010-6099-9

Cited by 6 publications

(4 citation statements)

References 40 publications

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“…There is a clear enhancement in peak intensity after postannealing in both HT and AT targets. This is consistent with other reports of C:Si [8], [10], [11].…”

Section: Materials Characterizationsupporting

confidence: 95%

“…Diffraction peaks for β-SiC (111) at 38°, (200) at 44°, (220) at 65°, and (311) at 78°are also observed. These results are practically identical to those of previous studies [8], [10]. The G-XRD for the postannealed HT target shows diffraction peaks for β-SiC (111), (200), (220), and (311), and none for Si.…”

Section: Materials Characterizationsupporting

confidence: 92%

“…Ion implantation is a commonly used technique in semiconductor device fabrication, making it easy to transfer a working implantation recipe from research to mass production. Implantation recipes must be finely tuned for ion dose and implantation energy, because self-sputtering is a concern at low energy and high dose [10], [13]. Postimplantation treatments such as anodization [5], [6], and annealing [7], [8] must also be considered, since they repair nonradiative damage caused by the implantation process and enhance desired light emission.…”

Section: Introductionmentioning

confidence: 99%

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Light-Emitting Diodes Fabricated From Carbon Ions Implanted Into p-Type Silicon

Purdy

Knights

Bradley

et al. 2015

IEEE Trans. Electron Devices

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Silicon-based light-emitting diodes (LEDs) are fabricated using p-type silicon implanted with C + ions and postannealed at 1000°C in flowing nitrogen. The ion implantation is carried out at ambient temperature (AT) and 400°C to investigate the influence of high-temperature implantation on the luminescence of LEDs. Transmission electron microscopy shows a near-surface layer of amorphous silicon (a-Si) with nanoscale carbon-rich inclusions in both ambient and heated targets while an additional polycrystalline Si layer is observed in the heated target only. A Schottky diode is constructed from C + -implanted Si (C:Si) with a semitransparent gold layer on the implanted surface and aluminum on the back of the target. Contact firing at 400°C in flowing nitrogen is used to optimize diode performance. Turn-ON voltage is determined to be about 3 V for all devices. Electroluminescence (EL) spectra show visible orangered emission indicating luminescence primarily due to a-Si and Si nanoparticles in the LEDs fabricated from C:Si implanted at AT. The high-temperature samples produced EL attributed to a-Si and porous silicon carbide. Index Terms-Amorphous silicon (a-Si), electroluminescence (EL), electron energy loss spectroscopy (EELS), ion implantation, light-emitting diode (LED), Schottky diode, silicon carbide (SiC), transmission electron microscopy (TEM).

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“…There is a clear enhancement in peak intensity after postannealing in both HT and AT targets. This is consistent with other reports of C:Si [8], [10], [11].…”

Section: Materials Characterizationsupporting

confidence: 95%

Section: Materials Characterizationsupporting

confidence: 92%

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Light-Emitting Diodes Fabricated From Carbon Ions Implanted Into p-Type Silicon

Purdy

Knights

Bradley

et al. 2015

IEEE Trans. Electron Devices

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“…It has been reported by several groups [16][17][18][19][20] that high fluences of C + implantation, followed by either Ó 2011 TMS subsequent or in situ thermal annealing, can be utilized to synthesize polycrystalline 21,22 or epitaxial 20 b-SiC in Si. Such ion-beam-synthesized buried b-SiC structures have shown promising results for applications in microelectromechanical systems (MEMS), 23 field-emission arrays, 24 and selective etching layers.…”

Section: Introductionmentioning

confidence: 99%

Effects of Thermal Annealing on the Formation of Buried β-SiC by Ion Implantation

Poudel

Rout

Diercks

et al. 2011

Journal of Elec Materi

Self Cite

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A systematic study of the formation of buried b-SiC structures by carbon ion implantation into Si followed by high-temperature thermal annealing has been carried out. A high fluence of carbon ions (8 9 10 17 atoms/cm 2 ) was implanted at 65 keV energy. Formation of the crystalline b-SiC phase was monitored by Fourier-transform infrared (FTIR) spectroscopy, x-ray diffraction (XRD), x-ray photoelectron spectroscopy (XPS), and transmission electron microscopy (TEM) techniques. The implanted samples were annealed at 900°C and 1100°C to observe the effects of annealing temperature on the formation of crystalline b-SiC. Formation of crystalline b-SiC was clearly observed in the sample annealed at 1100°C in a flowing nitrogen environment for a period of 1 h. Graphitic carbon clusters were observed at the implanted carbon profile peak position by XPS depth profile measurements. Various structural defects such as grain boundaries were also visualized in the annealed sample by highresolution TEM.

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