Fluid Flow and Heat Transfer with Natural and Mixed Convection in Czochralski Method

Бердников, В. С.; Винокуров, В.В.

doi:10.1109/apeie.2018.8545269

Cited by 1 publication

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“…The Czochralski-technique [7,8] is a method to pull a monocrystal with the same crystallographic orientation of a small monocrystalline seed crystal out of melted silicon.…”

Section: Czochralski Processmentioning

confidence: 99%

Backside Chippings Improvement through Wafer Dicing Parameter Optimization and Understanding the Anistropic Silicon Properties

Agudon¹,

Bacquian²

2021

JERR

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Semiconductor Companies and Industries soar high as the trend for electronic gadgets and devices increases. Transition from “manual” to “fully automatic” application is one of the advantages why consumer adapt to changes and prefer electronic devices as one of daily answers. Individuals who admire these electronic devices often ask how they are made. As we look inside each device, we can notice interconnected microchips commonly called IC (Integrated Circuit). These are specially prepared silicon wafers where integrated circuit are developed. Commonly, each device is composed of numerous microchips depending on the design and functionality IC production is processed from “front-end” to “back-end” assembly. Front-end assembly includes wafer fabrication where electrical circuitry is prepared and integrated to every single silicon wafers. Back-end assembly covers processing the wafer by cutting into smaller individual and independent components called “dice”. Each dice will be placed into Leadframe, bonded with wires prior encapsulating with mold compounds. After molding, each IC will be cut through a process called singulation. Afterwards, all molded units are subjected for functional testing. Dice is central to each IC; it is where miniature transistor, resistor and capacitor are integrated to form complex small circuitry in microchips. Pre-assembly (Pre-assy) stations have the first hand prior to all succeeding stations. Live wafers are primary direct materials processed in these stations. Robust work instruction and parameter must be practiced during handling and processing to avoid gross rejection and possible work-related defects. The paper is all about the challenges to resolve and improved the backside chippings in 280um wafer thickness in mechanical dicing saw. The conventional Mechanical dicing process induce a lot of mechanical stress and vibration during the cutting process which oftentimes lead to backside chipping and die crack issues. However, backside chippings can mitigate with proper selection of parameter settings and understand the silicon wafer properties.

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“…The Czochralski-technique [7,8] is a method to pull a monocrystal with the same crystallographic orientation of a small monocrystalline seed crystal out of melted silicon.…”

Section: Czochralski Processmentioning

confidence: 99%

Backside Chippings Improvement through Wafer Dicing Parameter Optimization and Understanding the Anistropic Silicon Properties

Agudon¹,

Bacquian²

2021

JERR

View full text Add to dashboard Cite

show abstract

Fluid Flow and Heat Transfer with Natural and Mixed Convection in Czochralski Method

Cited by 1 publication

References 1 publication

Backside Chippings Improvement through Wafer Dicing Parameter Optimization and Understanding the Anistropic Silicon Properties

Backside Chippings Improvement through Wafer Dicing Parameter Optimization and Understanding the Anistropic Silicon Properties

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