Fluids and resists for hyper NA immersion lithography

Taylor, James C.; Shayib, Ramzy; Goh, Sumarlin; Chambers, Charles R.; Conley, Will; Lin, Shy-Jay; Willson, C. Grant

doi:10.1117/12.600771

Cited by 8 publications

(8 citation statements)

References 2 publications

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“…The results are consistent to the typical value of the resist materials as summarized in Table1 [16][17][18]. After dropping the TMAH developer and DI-water, the refractive index became 1.738 and 1.638, respectively.…”

Section: Refractive Index and Contact Angle Of Resist Filmsupporting

confidence: 76%

In-situ Monitoring of TMAH Developer Intrusion into Resist Film by C-V Method

Shirataki

Kawai

2016

J. Photopol. Sci. Technol.

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The TMAH developer (2.38 wt% aqueous solution) intrusion into a resist film is analyzed by the typical current-voltage (C-V) method. As well known device structure, Metal / Insulator / Semiconductor (MIS) structure is employed, and a resist film (novolak resin base) is adopted to an insulator material. During the TMAH developer dropping on the Au mesh electrode, an increase of the capacitance and a parallel shift towards a negative gate bias voltage region in a C-V curve can be clearly observed. At the first stage of dropping, these signal changes in C-V curve are relatively large. Refractive index of the resist film slightly increases after the TMAH developer dropping, which reflects the condensation of polymer resin due to the TMAH developer intrusion. A contact angle decrease of the TMAH developer after dropping is also monitored. A spreading coefficient cS of TMAH developer decreases gradually as the time elapse. Particularly, the capacitance change clearly indicates the intrusion of the TMAH developer as the function of a time elapses. These dynamic measurements of the intrusion will be effective to analyze the liquid intrusion mechanisms into polymer materials.

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Section: Refractive Index and Contact Angle Of Resist Filmsupporting

confidence: 76%

In-situ Monitoring of TMAH Developer Intrusion into Resist Film by C-V Method

Shirataki

Kawai

2016

J. Photopol. Sci. Technol.

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“…These additives included both organic and inorganic species. Of these additivies, ionic species seemed to result in the most significant increase in the index 4,5 . A study of the optical properties of a variety of metal salts with halide and polyatomic anions, acids, sodium salts, and microelectronics-friendly quaternary ammonium salts has been completed.…”

Section: Introductionmentioning

confidence: 92%

“…The index of refraction data for aqueous solutions of a number of ionic substances in water has been previously reported 5 .…”

Section: Concentration Dependence Of Optical Propertiesmentioning

confidence: 99%

New high-index fluids for immersion lithography

et al. 2006

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Immersion lithography at 193nm has rapidly evolved from a novel technology to the top contender for the 45nm device node. The likelihood of immersion implementation in semiconductor manufacturing has raised interest in expanding its capabilities. Extending resolution requires immersion fluids with higher refractive indices than those currently available. We have therefore sought substances which, when added to water, increase the refractive index at 193nm without increasing the absorbance and viscosity beyond acceptable limits. This work explores the relationship between index of refraction and absorbance, with specific focus on the identification of fluids that have a high index and low absorbance. The majority of the fluids studied either have prohibitively high absorbance values or material properties that would be incompatible with current fluid handling systems. However, a class of methylsulfonate salts was identified with optical and material properties approaching the target values. Fluid testing and imaging is included to confirm the resolution enhancing capability of these new high index fluids.

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“…In researching higher index immersion fluids, several groups have explored water with additives as second generation immersion fluid candidates. [3][4][5][6][7][8] The additives include surfactants, inorganic salts, mineral acids, and particles. To date, these water-based fluids show refractive indices of 1.55 or less at 193nm 1 -improvements over water, but not high enough for 38nm or 32nm half-pitch feature-size lithography.…”

Section: Introductionmentioning

confidence: 99%

Second generation fluids for 193nm immersion lithography

French

Qiu²,

Yang³

et al. 2006

SPIE Proceedings

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Our studies of second generation immersion fluid candidates are moving beyond the discovery phase, and into addressing issues for their commercial application. Thus, we continue work to examine and fundamentally understand fluid transparency and refractive index, to fully optimize these properties. At the same time, we are now examining other process concerns, including index variation with temperature, new imaging performance studies, fluid handling considerations, and fluid property maintenance with active recycle during lithographic exposure. The systems and procedures we have developed in these areas continue to show our fluids' promise for sub-45nm immersion lithography applications.

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Fluids and resists for hyper NA immersion lithography

Cited by 8 publications

References 2 publications

In-situ Monitoring of TMAH Developer Intrusion into Resist Film by C-V Method

In-situ Monitoring of TMAH Developer Intrusion into Resist Film by C-V Method

New high-index fluids for immersion lithography

Second generation fluids for 193nm immersion lithography

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