Fluorinated graphene suspension for flexible and printed electronics: Flakes, 2D films, and heterostructures

Antonova, I. V.; Kurkina, I. I.; Гутаковский, А. К.; Kotin, I. A.; Ivanov, A. I.; Nebogatikova, N. A.; Soots, Regina A.; Smagulova, S. A.

doi:10.1016/j.matdes.2018.11.061

Cited by 31 publications

(27 citation statements)

References 52 publications

Supporting

Mentioning

Contrasting

Unclassified

Order By: Relevance

“…Fluorinated graphene (FG) is the most stable graphene‐based derivative; this circumstance makes it a promising material for a number of applications . Not long ago, we have developed a technology for fluorination of graphene in solutions of hydrofluoric acid permitting a simple preparation of FG suspensions in volumes sufficient for the fabrication of device structures .…”

Section: Introductionmentioning

confidence: 99%

Resistive Switching Effect with ON/OFF Current Relation up to 10⁹ in 2D Printed Composite Films of Fluorinated Graphene with V₂O₅ Nanoparticles

Ivanov

Гутаковский

Kotin

et al. 2019

Adv Elect Materials

Self Cite

View full text Add to dashboard Cite

and sulfides (MoS), [10][11][12] have been studied. Extensive studies of composites prepared from conducting and dielectric materials, whose combination enhances the resistive switching effect and improves its stability are underway. For instance, a resistive switching effect with the relation of current in low-resistive (ON) and highresistive (OFF) states amounting to three to five orders was observed in composites consisting of a polymer base and nonorganic nanoparticles, [13][14][15][16][17][18][19][20][21] fully organic polymers, [22] films consisting of a polymer in combination with carbon nanotubes, [23,24] titanium nanotubes, [25] or Cu-SiO 2 nanofilaments. [26] Also, it was shown that graphene oxide (GO) based structures with Au nanoparticles can demonstrate an ON/ OFF current ratio reaching nine orders. [27] Switchings in films based on vanadium and its oxides present a matter of much discussion. Both the magnitude and pattern of the effect depend on the composition of the oxide, [28,29] on the structure of the film (continuous chemical vapor deposition (CVD)-grown film or suspension consisting of separate nanoparticles), [30,31] and on the synthesis and formation conditions of the structures. [32] In the case of VO 2 , a temperature-dependent resistive switching effect was observed: for a VO 2 -based film to be switched into the low-resistive state, heating of the samples to 60-70 °C was required. [33] VO x films (a mixed-valency phase which can contain various compounds, for instance, V 2 O 3 , V 3 O 5 , V 3 O 7, etc. [34] ), synthesized using CVD or application of a nanoparticle suspension (crystal hydrates prepared by sol-gel method, incorporating water molecules V 2 O 5 •nH 2 O with n ≤ 2, and dependent on the annealing temperature of the sample), [35] demonstrate a resistive switching effect due to the action of an electric field. In the majority of cases, this effect was attributed to the formation of filaments which, with the passage of time, (under the action of the field) can become indestructible because of the irreversible migration of oxygen, with the resistive cell no longer returning into the high-resistive state. Oxide V 2 O 5 in the context of the irreversible migration of oxygen proved to be a more stable material, with the resistive switching effect observed without additional heating of the structure. On the whole, in vanadium oxide (V 2 O 5 ) compounds a resistive switching effect with an ON/OFF current Composite films consisting of fluorinated graphene flakes with vanadium oxide (V 2 O 5 ) nanoparticles exhibit a stable bipolar resistive switching effect that depends on the size of the composite particles, on the proportion between the film components, on the heat-treatment conditions of the films (or on the hydration degree of V 2 O 5 nanoparticles), and on the area of the structures. The ON/OFF current ratio of printed crossbar structures reaches 10 6 -10 9 for films 20-50 nm thick, with the switching voltage varying in the range from 1.5 to 3.7 V, 30 ns time for structure switchi...

show abstract

Section: Introductionmentioning

confidence: 99%

Resistive Switching Effect with ON/OFF Current Relation up to 10⁹ in 2D Printed Composite Films of Fluorinated Graphene with V₂O₅ Nanoparticles

Ivanov

Гутаковский

Kotin

et al. 2019

Adv Elect Materials

Self Cite

View full text Add to dashboard Cite

show abstract

“…As a result, the C-Ar flakes turned out to be non-conductive, in contrast to the C-He flakes. The absence of the C-Ar conductivity is most likely caused either by the formation of the amorphous particle or by the particle functionalization, turning, as a rule, graphene into a dielectric [ 43 , 44 , 45 ].…”

Section: Discussionmentioning

confidence: 99%

Graphene Flakes for Electronic Applications: DC Plasma Jet-Assisted Synthesis

et al. 2020

Self Cite

View full text Add to dashboard Cite

The possibility of graphene synthesis (the bottom-up approach) in plasma and the effective control of the morphology and electrical properties of graphene-based layers were demonstrated. Graphene flakes were grown in a plasma jet generated by a direct current plasma torch with helium and argon as the plasma-forming gases. In the case of argon plasma, the synthesized graphene flakes were relatively thick (2–6 nm) and non-conductive. In helium plasma, for the first time, graphene with a predominance of monolayer flakes and high conductivity was grown in a significant amount using an industrial plasma torch. One-dimensional (1D) flow modeling shows that the helium plasma is a less charged environment providing the formation of thinner graphene flakes with low defect density. These flakes might be used for a water-based suspension of the graphene with PEDOT:PSS (poly(3,4-ethylenedioxythiophene): polystyrene sulfonate) composite to create the structures employing the 2D printing technologies. Good structural quality, low layer resistance, and good mechanical strength combined with the ability to obtain a large amount of the graphene powder, and to control the parameters of the synthesized particles make this material promising for various applications and, above all, for sensors and other devices for flexible electronics and the Internet of things ecosystem.

show abstract

“…Synthesis of fluorinated graphene and its stability are important for designing the flexible and printed electronic devices [17][18][19][20] . The conventional synthesis methods include chemical fluorination and physical exfoliation: the former includes direct gas fluorination 13,21 , plasma fluorination [22][23][24] , hydrothermal fluorination 25 , etc.…”

mentioning

confidence: 99%

Ultra-strong stability of double-sided fluorinated monolayer graphene and its electrical property characterization

Wang

Narasaki

Zhang

et al. 2020

Sci Rep

View full text Add to dashboard Cite

Fluorinated graphene has a tunable band gap that is useful in making flexible graphene electronics. But the carbon–fluorine (C–F) bonds in fluorinated graphene can be easily broken by increased temperature or electron beam irradiation. Here, we demonstrate that the stability of fluorinated graphene is mainly determined by its C–F configuration. The double-sided fluorinated graphene has a much stronger stability than the single-sided fluorinated graphene under the same irradiation dose. Density functional theory calculations show that the configuration of double-sided fluorinated graphene has a negative and low formation energy, indicating to be an energetically stable structure. On the contrary, the formation energy of single-sided fluorinated graphene is positive, leading to an unstable C–F bonding that is easily broken by the irradiation. Our findings make a new step towards a more stable and efficient design of graphene electronic devices.

show abstract

Fluorinated graphene suspension for flexible and printed electronics: Flakes, 2D films, and heterostructures

Cited by 31 publications

References 52 publications

Resistive Switching Effect with ON/OFF Current Relation up to 10⁹ in 2D Printed Composite Films of Fluorinated Graphene with V₂O₅ Nanoparticles

Resistive Switching Effect with ON/OFF Current Relation up to 10⁹ in 2D Printed Composite Films of Fluorinated Graphene with V₂O₅ Nanoparticles

Graphene Flakes for Electronic Applications: DC Plasma Jet-Assisted Synthesis

Ultra-strong stability of double-sided fluorinated monolayer graphene and its electrical property characterization

Contact Info

Product

Resources

About

Fluorinated graphene suspension for flexible and printed electronics: Flakes, 2D films, and heterostructures

Cited by 31 publications

References 52 publications

Resistive Switching Effect with ON/OFF Current Relation up to 109 in 2D Printed Composite Films of Fluorinated Graphene with V2O5 Nanoparticles

Resistive Switching Effect with ON/OFF Current Relation up to 109 in 2D Printed Composite Films of Fluorinated Graphene with V2O5 Nanoparticles

Graphene Flakes for Electronic Applications: DC Plasma Jet-Assisted Synthesis

Ultra-strong stability of double-sided fluorinated monolayer graphene and its electrical property characterization

Contact Info

Product

Resources

About

Resistive Switching Effect with ON/OFF Current Relation up to 10⁹ in 2D Printed Composite Films of Fluorinated Graphene with V₂O₅ Nanoparticles

Resistive Switching Effect with ON/OFF Current Relation up to 10⁹ in 2D Printed Composite Films of Fluorinated Graphene with V₂O₅ Nanoparticles