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Two-layer films of partially fluorinated graphene (PFG) with graphene quantum dots and polyvinyl alcohol (PVA) were prepared by means of 2D printing technology. A stable resistive switching effect with the ON/OFF current ratio amounting from one to 4-5 orders of magnitude is found. The decrease in the PVA thickness leads to a change of the unipolar threshold switchings to the bipolar resistive switchings. The crossbar Ag/PFG/PVA/Ag structures retain their performance up to 6.5% deformation. The switching phenomenon is observed for a period about a year. The traps with characteristic activation energies ∼0.05 eV are suggested to be responsible for resistive switching. The time of charge-carrier emission from the localized states was found to be ∼5 μs. A quality model to describe the resistive switching effect in two-layer films implying the conduction over quantum dots proceeding with the participation of active traps at the PFG/PVA interface is proposed. The structures with the design demonstrated threshold resistive switching have their high potential for development of selector devices integrated to sensor or memristors circuits, for information storage and data processing, for flexible and wearable electronics. The structures with lower PVA thickness and the bipolar threshold switching are perspective for non-volatile memory cells for printed and flexible electronics.

A comparison of the structure and sensitivity of humidity sensors prepared from graphene (G)-PEDOT: PSS (poly (3,4-ethylenedioxythiophene)) composite material on flexible and solid substrates is performed. Upon an increase in humidity, the G: PEDOT: PSS composite films ensure a response (a linear increase in resistance versus humidity) up to 220% without restrictions typical of sensors fabricated from PEDOT: PSS. It was found that the response of the examined sensors depends not only on the composition of the layer and on its thickness but, also, on the substrate used. The capability of flexible substrates to absorb the liquid component of the ink used to print the sensors markedly alters the structure of the film, making it more porous; as a result, the response to moisture increases. However, in the case of using paper, a hysteresis of resistance occurs during an increase or decrease of humidity; that hysteresis is associated with the capability of such substrates to absorb moisture and transfer it to the sensing layer of the sensor. A study of the properties of G: PEDOT: PSS films and test device structures under deformation showed that when the G: PEDOT: PSS films or structures are bent to a bending radius of 3 mm (1.5% strain), the properties of those films and structures remain unchanged. This result makes the composite humidity sensors based on G: PEDOT: PSS films promising devices for use in flexible and printed electronics.

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This study is devoted to the production and investigation of dielectric films, based on oxidized and fluorinated graphene suspensions. The properties of the graphene oxide films may be greatly improved by adding fluorographene. FG films have transmission in the visible and near infrared ranges equal to 96-98%. Two-layer films of fluorinated graphene on graphene oxide and composite films (composite suspension of fluorinated and oxidized graphene) exhibit good insulating properties. Their leakage currents are lower than that in the graphene oxide or fluorinated graphene by 3-5 orders of magnitude. A significant increase in thermal stability and relatively low charge in the film and at the interface with silicon (3 × 10-1.4 × 10 cm) are also found for these films. An application of thin fluorographene films (a few nanometers) decorates and eliminates structural defects in the graphene oxide films, resulting in conductivity blocking in graphene oxide. The built-in charge density in the composite film of 10-20% fluorographene in the graphene oxide is much less than in the two-layer film (<1 × 10 cm). The created two-layer and composite films may be practically applied in 2D printed and flexible electronics as insulating films (gate dielectric and interlayer insulator), as well as materials showing the resistive effect.