Fluorinated polyimide with polyhedral oligomeric silsesquioxane aggregates: Toward low dielectric constant and high toughness

Chen, Zhigeng; Zhou, Yubin; Wu, Yancheng; Liu, Shumei; Huang, Haohao; Zhao, Jianqing

doi:10.1016/j.compscitech.2019.107700

Cited by 55 publications

(19 citation statements)

References 30 publications

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“…[1][2][3][4][5] So far, organic dielectric materials especially polyimide (PI) have been studied extensively as one of most promising candidate for low dielectric materials due to its excellent dielectric insulation, dimensional stability, solvent resistance, thermal stability and high mechanical strength. [6][7][8][9][10] Even so, the dielectric constant of traditional PI is between 3.0 to 4.0, make it insufficient for meeting the requirement of rapidly developing microelectronics and 5G. [11] It is urgent to further reduce the dielectric constant of PI film for their wider applications.…”

Section: Introductionmentioning

confidence: 99%

Overall Improvement in Dielectric, Water Resistance and Mechanical Properties of Polyimide Film via Synergy between GO and Sandwich‐type Porous Structure

Han

Zhang

et al. 2023

Chemistry An Asian Journal

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Simultaneous improvement in dielectric, water resistance and mechanical properties of polyimide (PI) films is critical for their practical use, but difficult to achieve. Herein, a sandwich‐type porous GO/PI film with excellent comprehensive properties was obtained through integrating a GO‐containing complex, fluorine‐containing porous structure and sandwich‐type distribution of porous structure by a simple, low‐cost and green breath figure method. With the addition of only a small amount of GO‐containing complex, a low dielectric constant of 2.21, water absorption of 0.51%, increment in dielectric constant after moisture treatment of 1.60% and high tensile strength of 113.1 MPa, tensile modulus of 1.70 GPa, with 35.39%, 79.42%, 81.81% of reduction and 17.22%, 21.43% of increase compared to PI film were shown, respectively. Moreover, these properties could be adjusted through regulating the component and porous structure by changing the parameters of breath figure method. These outstanding properties make the film a promising candidate for high‐performance low‐dielectric materials.

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Section: Introductionmentioning

confidence: 99%

Overall Improvement in Dielectric, Water Resistance and Mechanical Properties of Polyimide Film via Synergy between GO and Sandwich‐type Porous Structure

Han

Zhang

et al. 2023

Chemistry An Asian Journal

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“…Traditional materials such as glass and metal foil cannot meet these requirements [ 8 , 9 ]. Many kinds of transparent or low dielectric constant polymers have been reported, for instance, polyimides [ 10 , 11 , 12 , 13 ], poly(ethylene naphthalate) (PEN) [ 14 ], polybenzimidazoles [ 15 ], polybenzoxazoles (PBO) [ 16 ], and poly(phenylene ether) (PPE) [ 17 ]. Among them, polyimide (PI) is the most promising material for next-generation mobile communication devices due to its outstanding high-temperature resistance, chemical resistance, mechanical properties, and tunable dielectric properties [ 18 ].…”

Section: Introductionmentioning

confidence: 99%

A Novel Diamine Containing Ester and Diphenylethane Groups for Colorless Polyimide with a Low Dielectric Constant and Low Water Absorption

et al. 2022

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In this study, a novel diamine monomer containing ester and phenyl moieties, 1,2-diphenylethane-1,2-diyl bis(4-aminobenzoate) (1,2-DPEDBA), was synthesized through a three-step reaction. Using this diamine, a novel polyimide (PI) film was prepared with 4,4′-(hexafluoroisopropylidene)diphthalic anhydride (6-FDA) as a counter dianhydride through a typical two-step chemical imidization. For comparison, poly(pyromellitic dianhydride-co-4,4′-oxydianiline) (PMDA-ODA PI) was also synthesized via thermal imidization. The resulting 6-FDA-DPEDBA PI film was not only soluble in common polar solvents with high boiling points, such as N,N-dimethylacetamide (DMAc) and N,N-dimethylformamide (DMF), but also soluble in common low-boiling-point polar solvents, such as chloroform (CHCl3) and dichloromethane (CH2Cl2), at room temperature. The resulting novel PI showed a 5% weight loss temperature (T5d) at 360 °C under a nitrogen atmosphere. The resulting PI film was colorless and transparent with a transmittance of 87.1% in the visible light region ranging from 400 to 760 nm. The water absorption of the novel PI film was of 1.78%. The PI film also possessed a good moisture barrier and hydrophobicity. Furthermore, the resulting PI film displayed a low dielectric constant of 2.17 at 106 Hz at room temperature. In conclusion, the novel PI film exhibited much better optical transparency, lower moisture absorption, and a lower dielectric constant as well as better solubility than the PMDA-ODA PI film, which is insoluble in any solvent, although its thermal stability is not better than that of PMDA-ODA PI.

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“…With the fast evolution of the microelectronics industry, the impact of the propagation velocity delay of the signal, crosstalk, and power dissipation on microelectronic performance is becoming increasingly apparent. [1][2][3] To address these shortcomings, it is critical to develop new interlayer insulation structure, and the side methyl group can significantly reduce the interaction between PI molecular chains, resulting in the improvement of solubility and melt processability (thermoplasticity) of PI films. Furthermore, the large fluorenyl cardo groups of BAFL greatly enhanced the rigidity of the molecular skeleton, which significantly increased the heat resistance of polyimide.…”

Section: Introductionmentioning

confidence: 99%

Achieving Hydrophobic Ultralow Dielectric Constant Polyimide Composites: Combined Efforts of Fluorination and Porous Fillers

Zhao

et al. 2022

Macro Materials & Eng

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The advancement of the microelectronics industry necessitates the use of interlayer insulation materials with low dielectric constants and high mechanical properties. In this paper, a new type of copolymerized fluorinated polyimide (PI) is synthesized, and mixed with polyhedral oligomeric silsesquioxane (POSS) functionalized mesoporous silica (MCM-41@POSS). The PI/MCM-41@POSS composites exhibit good hydrophobicity. With the addition of 3 wt% MCM-41@POSS, the PI composite attained an ultralow dielectric constant (k = 1.88) and low dielectric loss (0.01) at 1 MHz, which is attributed to the mesoporous structure of MCM-41 and the restriction of polarization in the bonded region. The decorated POSS effectively prevents the penetration of PI molecular chains into the mesopores of MCM-41. In addition, the PI composites containing 3 wt% of MCM-41@POSS obtain the highest maximum stress of 104.03 MPa with an elongation at break of 13.73%. The hydrophobic PI composites with ultralow-k are expected to be good candidates as interlayer materials in microelectronics devices.

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Fluorinated polyimide with polyhedral oligomeric silsesquioxane aggregates: Toward low dielectric constant and high toughness

Cited by 55 publications

References 30 publications

Overall Improvement in Dielectric, Water Resistance and Mechanical Properties of Polyimide Film via Synergy between GO and Sandwich‐type Porous Structure

Overall Improvement in Dielectric, Water Resistance and Mechanical Properties of Polyimide Film via Synergy between GO and Sandwich‐type Porous Structure

A Novel Diamine Containing Ester and Diphenylethane Groups for Colorless Polyimide with a Low Dielectric Constant and Low Water Absorption

Achieving Hydrophobic Ultralow Dielectric Constant Polyimide Composites: Combined Efforts of Fluorination and Porous Fillers

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