1990
DOI: 10.1109/66.47970
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Fluorine passivation of metal surface for self-cleaning semiconductor equipment

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Cited by 24 publications
(13 citation statements)
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“…As described in the previous papers [6]- [8], it has a non-stoichiometric structure. Therefore, the direct fluoridated film does not have favorable characteristics in terms of the corrosion resistance, outgassing and other aspects.…”
Section: Optimum Condition For Bakingmentioning
confidence: 89%
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“…As described in the previous papers [6]- [8], it has a non-stoichiometric structure. Therefore, the direct fluoridated film does not have favorable characteristics in terms of the corrosion resistance, outgassing and other aspects.…”
Section: Optimum Condition For Bakingmentioning
confidence: 89%
“…Previous articles by the authors [6]- [8] provide information on fluoridated surfaces on several metals. They also show, that the best passivating film on nickel and stainless steel can be formed only by a two-step fluoridation process [6]. The composition of the film formed in the first step, i.e.…”
Section: Introductionmentioning
confidence: 98%
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“…The remote plasma cleaning processes of the silicon dioxide and silicon nitride layers using PFCs such as C 2 F 6 , C 3 F 8 , C 4 F 8 , and NF 3 have been studied and used in the flat panel display (FPD) industry [10][11][12][13][14][15][16][17][18][19][20][21][22][23][24][25][26]. The PFCs that are reemitted during chamber etching, however, are known to have a serious global warming effect in the atmosphere [10][11][12][13][14][15][20][21][22][23][24][25][26].…”
Section: ) Gasesmentioning
confidence: 99%