Fluorine-vacancy defects in fluorine-implanted silicon studied by electron paramagnetic resonance

Abstract

An electron paramagnetic resonance ͑EPR͒ study on fluorine-vacancy defects ͑F n V m ͒ in fluorine-implanted silicon is demonstrated. Fluorine implantation is an important technology for Si microdevices and EPR measurements showed that this process created a variety of F n V m defects of different sizes ͑V 2 , V 4 , and V 5 ͒. In F n V m , a Si-F bond exhibited a different chemical nature compared to a Si-H bond in hydrogen-vacancy complexes. The most primitive defect was FV 2 ͑F0 center͒ and the final types were F n V 5 ͑F1 center͒ and F n V 2 ͑F2 center͒ which increased in annealing processes as low temperature as 200°C.

Defect identification in semiconductors with positron annihilation: Experiment and theory

“…The fluorine-vacancy complexes have indeed been predicted as the cause for the reduction of diffusion of boron (Diebel and Dunham, 2004;Lopez et al, 2005;Lopez and Fiorentini, 2006;Vollenweider, Sahli, and Fichtner, 2009), and they have been experimentally found also by EPR (Umeda et al, 2010). TEM has been used to follow the generation of larger F precipitates in solid-phase epitaxy of Si (Boninelli et al, 2006(Boninelli et al, , 2008, consistent with the predicted vacancy-fluorine complex dynamics.…”

Influence of the chemical nature of implanted ions on the structure of a silicon layer damaged by implantation

“…Fluorine is the most chemically active element among those used for implantation in this work. It forms not mobile complexes with silicon vacancies (fluorine‐vacancy defects F n V m or with interstitials Si i . The probability of annihilation of vacancy‐interstitial pairs decreases.…”

Microscopic origins of dry-etching damages in silicon large-scaled integrated circuits revealed by electrically detected magnetic resonance

“…In the F0 center, a fluorine atom forms a Si-F bond inside a V 2 space. 6,13 Since this bond is nearly along the original Si-Si bond, the 19 F hyperfine splitting of F0 showed approximately a h111i axial symmetry. 13 Consequently, the hyperfine splitting was maximized in the [111] direction ($55 ) and was minimized in the normal direction to [111] (90 À 55 ¼ 35 ).…”

“…3) and is in a similar range (4.8-8.2 mT) to the case of 19 F hyperfine splittings (4.2-6.3 mT) of the F0 center (FV 2 defect). 13 The F0 center is a primitive type of fluorine-vacancy clusters (F n V m defects) and is only a defect that revealed the detectable 19 F hyperfine splitting in Si. However, the 19 F hyperfine splittings of "Fi" and F0 exhibited such different angular dependences that we should consider opposite types of atomic structures for each center.…”

“…13 Consequently, the hyperfine splitting was maximized in the [111] direction ($55 ) and was minimized in the normal direction to [111] (90 À 55 ¼ 35 ). 13 On FIG. 3.…”