Fluorite-Structured Ferroelectric-/Antiferroelectric-Based Electrostatic Nanocapacitors for Energy Storage Applications

Ali, Faizan; Zhou, Dayu; Sun, Nana; Ali, Hafiz Waqas; Abbas, Akmal; Iqbal, Muhammad Faisal; Dong, Fan; Kim, Ki‐Hyun

doi:10.1021/acsaem.0c00987

Cited by 34 publications

(36 citation statements)

References 170 publications

(332 reference statements)

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“…Several previous articles have summarized studies on fluorite structured FE and AFE materials, commonly focusing on deposition methods of thin films, [26] epitaxial thin films, [27] energyand memory-related properties, [9,[28][29][30][31][32] and reliability [33][34][35] of fluorite structured materials. In this paper, we will examine and broaden our present understanding of ferroelectricity in hafnium oxide-based films.…”

Section: Cycles)mentioning

confidence: 99%

“…[118] On the contrary, conventional materials are not suitable for 3D nanocapacitors due to their large deposition thickness. [9] Recently, it has been reported that the concept of negative capacitance can also be used for energy storage capacitors. The ESD of negative capacitance electrostatic capacitors based on Hf 0.5 Zr 0.5 O 2 thin films was as high as 109 J cm -3 with the η of ≈94%.…”

Section: Energy Storage Capacitorsmentioning

confidence: 99%

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Fluorite‐Structured Ferroelectric and Antiferroelectric Materials: A Gateway of Miniaturized Electronic Devices

Ali

Lehninger

et al. 2022

Adv Funct Materials

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Ferroelectric (FE) and antiferroelectric (AFE) materials are used for several memory-related and energy-related applications. Perovskite materials (e.g., bulk ceramics) remain the most common materials for many applications. However, due to large deposition thickness, these materials are not appropriate for future miniaturized devices. In 2011, FE and AFE properties were reported in Si-doped HfO 2 thin films. HfO 2 -based FE and AFE materials have several advantages over conventional materials, such as ultrathin deposition thickness (in range of nanometers), compatibility with existing Si semiconductor technology, and suitability for the integration within 3-D nanostructures. Therefore, fluorite-structured materials can be appropriate for miniaturized devices. These fluorite-structured materials are extensively studied for memory and energy-related applications. The first review on this topic was published after four years of discovering the FE and AFE properties in these materials. From the past decade, a lot of research has been reported about the detailed mechanism and application of these materials. This review insightfully discusses the progress in the research of fluorite-structured materials and critically discusses some potential applications. Here some challenges are also discussed, new knowledge is extracted, and promising future research directions of these materials are suggested.

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Section: Cycles)mentioning

confidence: 99%

Section: Energy Storage Capacitorsmentioning

confidence: 99%

Fluorite‐Structured Ferroelectric and Antiferroelectric Materials: A Gateway of Miniaturized Electronic Devices

Ali

Lehninger

et al. 2022

Adv Funct Materials

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“…[143] Fluorite-based AFE materials have been studied for energyrelated applications such as energy storage, solid-state cooling, and pyroelectric energy harvesting. [3,[144][145][146][147][148][149][150] The origin of antiferroelectricity can be ascribed to the electric field-induced phase transition between the nonpolar t-phase and the polar o-phase. [133,140,151] However, antiferroelectricity in fluoritebased materials is substantially different from AFE properties induced by antiparallel dipole moments.…”

Section: Origin Of Ferroelectricity and Antiferroelectricity In Fluor...mentioning

confidence: 99%

Novel Fluorite‐Structured Materials for Solid‐State Refrigeration

Ali

Abbas

et al. 2022

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Refrigeration based on the electrocaloric effect can offer many advantages over conventional cooling technologies in terms of efficiency, size, weight, and power source. The discovery of ferroelectric and antiferroelectric properties in fluorite‐based materials in 2011 has led to diverse applications related to memory (e.g., ferroelectric tunnel junctions, nonvolatile memory, and field‐effect transistors) and energy fields (e.g., energy storage and harvesting, electrocaloric refrigeration, and infrared detection). Fluorite‐based materials exhibit several properties not shared by most conventional materials (such as in terms of compatibility with complementary metal‐oxide semiconductors and 3D nanostructures, deposition thickness at the nanometer scale, and simple composition). Here, the electrocaloric refrigeration properties of fluorite‐based ferroelectric/antiferroelectric materials are reviewed by focusing on the advantages of ZrO2‐ and HfO2‐based materials (e.g., relative to conventional perovskite‐ and polymer‐based counterparts). Finally, the recent progress made in this research field are also discussed along with its future perspectives.

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“…There have been several review articles of FE HfO 2 films that have focused on film deposition, macroscopic FE properties, device fabrication and defect chemistry [36,51,62,75,[81][82][83][84][85][86][87][88][89] . However, none of them deal with the relationship between microstructure and macroscopic FE properties, despite the fact that there has been a large number of publications that consider the microstructures of HfO 2 FEs since the first demonstration of ferroelectricity in HfO 2 films [16,18] .…”

Section: Introductionmentioning

confidence: 99%

Microstructural evolution and ferroelectricity in HfO2 films

Zhao¹,

Chen²,

Liao³

2022

Microstructures

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Ferroelectric (FE) materials, which typically adopt the perovskite structure with non-centrosymmetry and exhibit spontaneous polarization, are promising for applications in memory, electromechanical and energy storage devices. However, these advanced applications suffer from the intrinsic limitations of perovskite FEs, including poor complementary metal oxide semiconductor (CMOS) compatibility and environmental issues associated with lead. Hafnium oxide (HfO2), with stable bulk centrosymmetric phases, possesses robust ferroelectricity in nanoscale thin films due to the formation of non-centrosymmetric phases. Owing to its high CMOS compatibility and high scalability, HfO2 has attracted significant attention. In the last decade, significant efforts have been made to explore the origin of the ferroelectricity and factors that influence the FE properties in HfO2 films, particularly regarding the role of microstructure, which is vital in clarifying these issues. Although several comprehensive reviews of HfO2 films have been published, there is currently no review focused on the relationship between microstructure and FE properties. This review focuses on the microstructure-property relationships in FE polycrystalline and epitaxial HfO2 films. The crystallographic structures and characterization methods for HfO2 polymorphs are first discussed. For polycrystalline HfO2 films, the microstructure-FE properties relationships, driving force and kinetic pathway of phase transformations under growth parameters or external stimuli are reviewed. For epitaxial films, the lattice matching relations between HfO2 films and substrates and the corresponding impact on the FE properties are discussed. The FE properties between polycrystalline and epitaxial HfO2 films are compared based on their different microstructural characteristics. Finally, a future perspective is given for further investigating FE HfO2 films.

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Fluorite-Structured Ferroelectric-/Antiferroelectric-Based Electrostatic Nanocapacitors for Energy Storage Applications

Cited by 34 publications

References 170 publications

Fluorite‐Structured Ferroelectric and Antiferroelectric Materials: A Gateway of Miniaturized Electronic Devices

Fluorite‐Structured Ferroelectric and Antiferroelectric Materials: A Gateway of Miniaturized Electronic Devices

Novel Fluorite‐Structured Materials for Solid‐State Refrigeration

Microstructural evolution and ferroelectricity in HfO2 films

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