Fluoropolymer and Aerogel Thin Films as Low Dielection in IC Metallization

Schulz, Stefan E.; Bertz, A.; Streiter, R.; Uhlig, M.; Weiß, Ulrich; Werner, Thomas R.; Winkler, Tobias; Geßner, Thomas

doi:10.7567/ssdm.1998.a-6-4

Cited by 3 publications

(2 citation statements)

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“…10) The supercritical CO 2 fluid behaves as a gentle solvent with a high diffusivity and zero surface tension. The application of supercritical CO 2 to LSI processing has been studied for the drying of rinsed fine photoresist patterns, 11,12) film deposition, 13,14) gel drying, 15,16) the modification of porous low-dielectric constant (low-k) films, 17,18) and residue removal. 19,20) We have recently reported a novel method of etching transition metals (Co, Cu, Fe, and Ni) in the supercritical CO 2 , using hexafluoroacetylacetone (1,1,1,5,5,5-hexafluoro-2,4-pentanedione, CAS 1522-22-1, abbreviated Hhfac hereinafter) as a chelating agent.…”

Section: Introductionmentioning

confidence: 99%

Oxygen-assisted platinum etching in supercritical carbon dioxide fluids using hexafluoroacetylacetone

Kondoh

Ogihara

2018

Jpn. J. Appl. Phys.

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The formation of volatile products is essential in dry etching reactions. Pt compounds have a low vapor pressure and thus Pt is hardly removed by dry etching. In the present work, Pt thin films were etched in supercritical CO2 fluids. Hexafluoroacetlyacetone (Hhfac), a fluorinated compound, was added to a supercritical CO2 fluid together with O2 at elevated temperatures (typically 220 °C). Etching was observed only when O2 was added. The etching amount increased with either reaction temperature, O2 concentration, or Hhfac concentration. The etching rate at 220 °C was approximately 0.1 nm/min.

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Section: Introductionmentioning

confidence: 99%

Oxygen-assisted platinum etching in supercritical carbon dioxide fluids using hexafluoroacetylacetone

Kondoh

Ogihara

2018

Jpn. J. Appl. Phys.

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“…14) The supercritical CO 2 fluid behaves as a gentle solvent with a high diffusivity and zero surface tension. The application of supercritical CO 2 to LSI processing has been studied, for example in the drying of rinsed fine photoresist patterns, 15,16) film deposition, 17,18) gel drying, 19,20) the modification of porous low-k materials, 21,22) cleaning and residue removal, 23,24) and metal etching. 25) Owing to its high diffusivity and solvent capability, supercritical CO 2 can penetrate deep through nanopores and remove porogen.…”

Section: Introductionmentioning

confidence: 99%

Removal of organic template of mesoporous organosilicate thin films using supercritical carbon dioxide fluids

Kondoh

Segawa

Watanabe

et al. 2017

Jpn. J. Appl. Phys.

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An organic template of periodic mesoporous organosilicate films was removed using supercritical CO2 fluids that are compressive solvents with a nanopenetration capability. The removal efficiency was evaluated by infrared spectroscopy and refractive index measurements. The removal ratio was dependent on treatment pressure and temperature and improved when the fluid density and/or temperature was high. Because a very high process temperature can deteriorate the organosilicate frame structure, the removal at a low temperature and a high pressure is preferable. The films under supercritical CO2 processing were characterized also in situ ellipsometry. It was found that the removal is a fast process and mostly completes during temperature ramping.

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Electrical and adhesion properties of plasma-polymerised ultra-low k dielectric films with high thermal stability

Uhlig

Bertz

Rennau

et al. 2000

Microelectronic Engineering

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Fluoropolymer and Aerogel Thin Films as Low Dielection in IC Metallization

Cited by 3 publications

References 0 publications

Oxygen-assisted platinum etching in supercritical carbon dioxide fluids using hexafluoroacetylacetone

Oxygen-assisted platinum etching in supercritical carbon dioxide fluids using hexafluoroacetylacetone

Removal of organic template of mesoporous organosilicate thin films using supercritical carbon dioxide fluids

Electrical and adhesion properties of plasma-polymerised ultra-low k dielectric films with high thermal stability

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