Focused ion beam-based fabrication of nanostructured photonic devices

Cryan, Martin J; Hill, M. J.; Sanz, Dorleta Cortaberria; Ivanov, P; Heard, Peter J; Tian, Liangfei; Yu, Siyuan; Rorison, JM

doi:10.1109/jstqe.2005.860990

Cited by 38 publications

(23 citation statements)

References 25 publications

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“…However, since we use high aspect-ratio RWGs we avoid planarization required for EBL, due to the use of the FIB. FIB milling is also used as a method of fabrication of PCs in diverse materials [26,27,28,29,30] by direct milling, i.e. without masking layer.…”

Section: Methodsmentioning

confidence: 99%

Wavelength tuning of planar photonic crystals by local processing of individual holes

Kicken¹,

Alkemade²,

Heijden³

et al. 2009

Opt. Express

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Tuning of the resonant wavelength of a single hole defect cavity in planar photonic crystals was demonstrated using transmission spectroscopy. Local post-production processing of single holes in a planar photonic crystal is carried out after selectively opening a masking layer by focused ion beam milling. The resonance was blue-shifted by enlargement of selected holes using local wet chemical etching and red-shifted by infiltration with liquid crystals. This method can be applied to precisely control the resonant frequency, and can also be used for mode selective tuning. © 2009 Optical Society of AmericaOCIS codes: (000.0000) General.

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Section: Methodsmentioning

confidence: 99%

Wavelength tuning of planar photonic crystals by local processing of individual holes

Kicken¹,

Alkemade²,

Heijden³

et al. 2009

Opt. Express

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“…2a. 28 For any given beam current (spot size), the excess etch becomes progressively worse as the proximity or depth of the holes increases. Figure 2b and c demonstrate the severity of excess etch for hexagonal PhCs milled in Ta 2 O 5 with a 150pA (29nm) beam, a period of a = 400nm, and hole radii of r = 0.25a and r = 0.4a.…”

Section: Optimizing the Fib Milling Processmentioning

confidence: 99%

Fabrication of photonic crystals in rare-earth doped chalcogenide glass films for enhanced upconversion

Pollard¹,

Knight²,

Parker³

et al. 2012

Optical Components and Materials IX

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Gallium lanthanum oxysulfide (GLSO) is a promising host material for observing strong upconversion emission from trivalent rare-earth ions such as erbium (Er 3+ ). Its attractive properties include high rare-earth solubility due to the lanthanum content of the glass former, a high refractive index (n = 2.2 at 550nm) for high radiative efficiency, and a low maximum phonon energy of approximately 425cm −1 . Photonic crystals meanwhile can provide controlled light extraction, and may be capable of suppressing unwanted IR emission from lower lying metastable states. Here, we describe the fabrication of photonic crystals in annealed films of Er 3+ -doped GLSO deposited by RF sputtering. The most intense visible upconversion emission is observed in films annealed at 550• C, close to the bulk glass transition temperature. Hexagonal lattice photonic crystals are subsequently milled into the films using a focused ion beam (FIB). The milling parameters are optimized to produce the most vertical sidewall profile.

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“…Figure 10 shows that a well defined set of holes have been etched. An 11 pA beam current is selected to drill the holes in order to maintain good hole profiles [16]. However the rows of holes closest to the active region must be etched very carefully such that they do not overlap with the active region in order to reduce damage to the quantum wells.…”

Section: Fabricationmentioning

confidence: 99%

“…The devices used in this paper are commercial grade SOAs and have been supplied by Dublin City University and are from Amphotonix Ltd. The PhC waveguide is designed to work near to the optical communication wavelength of 1550 nm and has been fabricated using focused ion beam (FIB) processing, prior to wafer scale electron beam processing [15][16][17][18][19]. FIB processing is a rapid and maskless nanofabrication technique that has been widely used in optics and optoelectronics to create device prototypes.…”

Section: Introductionmentioning

confidence: 99%

Fabrication and measurement of a photonic crystal waveguide integrated with a semiconductor optical amplifier

Cao

Heard

et al. 2009

J. Opt. Soc. Am. B

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A III-V semiconductor photonic crystal (PhC) waveguide is integrated into a semiconductor optical amplifier (SOA); this has the potential to reshape pulses that are distorted and chirped on propagation through the SOA. The PhC waveguide is modeled using the three-dimensional (3D) finite difference time domain (FDTD) method initially for the ideal case of infinite depth holes, and this shows a ministop band close to 1600 nm. The PhC waveguide is then fabricated into a commercial SOA using focused ion beam etching. The optical power measured at the output of the PhC-SOA waveguide shows evidence of a ministop band but with a small stopband depth. More realistic 3D FDTD modeling including effects of finite hole depth and vertical layer structure is then shown to give much better agreement with measured results. Finally predictions are made for the performance of a membrane structure.

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Focused ion beam-based fabrication of nanostructured photonic devices

Cited by 38 publications

References 25 publications

Wavelength tuning of planar photonic crystals by local processing of individual holes

Wavelength tuning of planar photonic crystals by local processing of individual holes

Fabrication of photonic crystals in rare-earth doped chalcogenide glass films for enhanced upconversion

Fabrication and measurement of a photonic crystal waveguide integrated with a semiconductor optical amplifier

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