Focused Ion beam implantation of diamond

McKenzie, Warren; Quadir, Zakaria; Gass, M; Munroe, Paul

doi:10.1016/j.diamond.2011.06.022

Cited by 44 publications

(39 citation statements)

References 17 publications

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“…Most recently, few attempts have been made to study the ion-induced amorphization of diamond. McKenzie et al [22] has recently reported that the near-surface microstructure varies with the increase of ion dose and the critical dose for the amorphization of the diamond surface is 2.0 × 10 14 ions/cm amorphlization. For another study of 30 keV Ga + sputtered nanocrystalline diamond films, the thickness of the damage layer was found to grow with the ion dose and achieved an equilibrium value of 44 nm [18].…”

Section: The Dynamic Damage Processmentioning

confidence: 99%

“…Typically, Gnaser et al [18] has reported a fluence-dependent evolution of the implanted Ga concentration in nanocrystalline diamond films by SIMS. Rubanov et al [21] and McKenzie et al [22] investigated the ion fluence-dependent amorphization of diamond substrate under 30 keV Ga + FIB milling. These experiments show the existence of atomic damaged layer in chemical vapour deposition (CVD) or doped diamond materials under high energy irradiation.…”

Section: Introductionmentioning

confidence: 99%

“…In recent years, a variety of experimental techniques including Raman spectroscopy [20], secondary ion mass spectrometry (SIMS) [18], and transmission electron microscope (TEM) [21,22] have been used to study the ion-induced damage in diamond. Typically, Gnaser et al [18] has reported a fluence-dependent evolution of the implanted Ga concentration in nanocrystalline diamond films by SIMS.…”

Section: Introductionmentioning

confidence: 99%

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Molecular dynamic simulation of low-energy FIB irradiation induced damage in diamond

Tong

et al. 2015

Nuclear Instruments and Methods in Physics Research Section B:

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In this article, a large scale multi-particle molecular dynamics (MD) simulation model was developed to study the dynamic structural changes in single crystal diamond under 5 keV Ga + irradiation in conjunction with a transmission electron microscopy (TEM) experiment. The results show that the thickness of ion-induced damaged layer (~ 9.0 nm)obtained from experiments and simulations has good accordance, which demonstrates the high accuracy achieved by the developed MD model. Using this model, the evolution of atomic defects, the spatial distributions of implanted Ga particles the thermal spike at the very core collision area were analysed. The local thermal recrystallizations observed during each single ion collision process and the increase of the density of the non-diamond phase (mostly sp 2 bonded) at irradiation area are fund to be the underling mechanisms responsible for ion fluence dependent amorphization of diamond observed in previous experiments.

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Section: The Dynamic Damage Processmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Molecular dynamic simulation of low-energy FIB irradiation induced damage in diamond

Tong

et al. 2015

Nuclear Instruments and Methods in Physics Research Section B:

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“…Mckenzie et al [19] reported that the near surface microstructure of a single crystal natural conductive diamond varies with the increase of ion dose, and the critical dose for the amorphization of the diamond substrate (thickness of 35 nm) is 2.0 × 10 14 ions/cm 2 . Additionally, Gnaser and co-workers [16] has reported a fluence-dependent evolution of the implanted Ga concentration in nanocrystalline diamond films by SIMS.…”

Section: Introductionmentioning

confidence: 99%

“…In recent years, a variety of experimental techniques including Raman spectroscopy [17], transmission electron microscope (TEM) [18,19], and secondary ion mass spectrometry (SIMS) [16] have been used to study the ion-induced damage in diamond. Admas et al [9] used TEM to study the amorphous carbon layer in single crystal diamond tool created by FIB milling and a larger amorphous layer was found when a small local incident angle of ion beam applied.…”

Section: Introductionmentioning

confidence: 99%

Investigation of focused ion beam induced damage in single crystal diamond tools

Tong

Luo

2015

Applied Surface Science

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In this work, transmission electron microscope (TEM) measurements and molecular dynamics (MD) simulations were carried out to characterise the focused ion beam (FIB) induced damage layer in a single crystal diamond tool under different FIB processing voltages. The results obtained from the experiments and the simulations are in good agreement. The results indicate that during FIB processing cutting tools made of natural single crystal diamond, the energetic Ga + collision will create an impulse-dependent damage layer at the irradiated surface. For the tested beam voltages in a typical FIB system (from 8 kV to 30 kV), the thicknesses of the damaged layers formed on a diamond tool surface increased from 11.5 nm to 27.6 nm. The dynamic damage process of FIB irradiation and ion-solid interactions physics leading to processing defects in FIB milling were emulated by MD simulations. The research findings from this study provide the in-depth understanding of the wear of nanoscale multi-tip diamond tools considering the FIB irradiation induced doping and defects during the tool fabrication process.

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