Focused ion beam induced deposition of platinum for repair processes

Abstract

Focused ion beam induced deposition of platinum from a gas of (methylcyclopentadientyl) trimethyl platinum has been demonstrated and used for integrated circuit repair. Ga+ ions in the range of 30–40 keV have been used and line widths down to 0.3 μm with resistivities as low as 70 μΩ cm have been observed. The deposition yield as a function of angle of incidence has been measured by scanning the ion beam across a 2.6 μm diameter pyrex rod. The conductors on an actual integrated circuit have been modified by milling and filling a via to connect two Al lines in a sandwiched configuration as well as by milling two vias through passivation and connecting two adjacent Al lines.

Optimization and characterization of Drop-on-Demand inkjet printing process for platinum organometallic inks

“…Organometallic materials are already used in the semiconductor industry to repair photolithography masks and integrated circuits using focused ion beam deposition [3] [4]. Other methods that have been reported for depositing organometallic material include direct laser writing and e-beam writing.…”

Facile electron-beam lithography technique for irregular and fragile substrates

“…Focused Ion Beam (FIB) can offer similar benefit, but the cost is very high and deposition materials are quite limited. 9 Most useful would be a facile, low-cost e-beam patterning method for fragile or non-planar substrates, ideally still retaining the many advantages of PMMA.…”

Application of mass-separated focused ion beams in nano-technology

“…Applying these unique point-like sources with a brightness in the order of 10 6 Acm À2 sr À1 ion beams with a diameter less than 10 nm and current densities more than 10 Acm À2 can be achieved. So a very promising field was opened to use the FIB for mask [3] and integrated circuit repair and modification [4], failure analysis [5] or TEM specimen preparation [6], as well as in material science for sputtering investigations and applications [7,8], for the formation of quantum dots and wires [9] for the fabrication of MicroElectro-Mechanical Systems (MEMS) [10] and for a lot of other applications in micro-and nano-technology. The majority of FIB systems operating worldwide are suited only for gallium ions, due to the favoured properties, like its low melting point (T m = 29.6°C) and the simple emitted mass spectrum.…”