Focused ion beam lithography and its application to submicron devices

The mechanism of the ion beam inhibited etching formation in Gallium-FIB implanted resist films

“…At energies of 200 keV, for example, light ions of Be + and Si + penetrate into the PMMA resist down to depths of 1.2 and 0.6 lm, respectively [5]. By comparison, much heavier Ga + ions used in FIB lithography could only penetrate the top 100 nm at 100 keV [6], which is not deep enough to expose the entire resist thickness.…”

“…Three FIB methods have been studied in general for nanofabrication of advanced IC devices, including the FIB direct milling, resist patterning with light ions, and the dry development of FIB implanted resists [2,4,5].…”

Desarrollo de superficies nanoestructuradas para biosensores ópticos y sensores biomiméticos

“…120,121 Las ventajas que ofrece la técnica EBL para la investigación son enormes, pues es posible definir nanopatrones de muy diversas geometrías con gran resolución, alta densidad, excelente uniformidad y gran reproducibilidad. A diferencia de la litografía por nanoimpresión (nanoimprint lithography, NIL), [122][123][124] no precisa de un molde pues es una técnica de «no contacto», y ofrece mayores velocidades de escritura que la litografía FIB 119,[125][126][127] además de no presentar el inconveniente derivado de la contaminación por iones de esta última. Las principales limitaciones de la técnica EBL son el elevado coste del equipo y los tiempos prolongados que puede requerir para obtener estructuras grandes o complejas, por lo que esta técnica no es la más apropiada para producción en masa.…”

Focused ion beam lithography-overview and new approaches

“…Ion beams have the advantages of high-energy deposition rates and low scattering effects in the resist [5]. Therefore, conventional FIB lithography can be a high throughput, high resolution (nanometer) resist patterning process.…”

“…It was reported that the dose needed to expose most resists by ions is about two orders of magnitude lower than for electrons [ I ] . The As a solution to this problem, the bilayer resist schemes for FIB lithography have been developed [5,6,7]. These schemes generally utilise a thin silicon-containing resist layer over a thick planarising layer.…”