Foliar Nutrient (N, P, K, B) Application Effects on Almond Yields

Meyer, Richard; Edstrom, John; Deng, J.; Cutter, S.

doi:10.17660/actahortic.1998.470.56

Cited by 2 publications

(3 citation statements)

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“…The presence of these phonon assisted bands is consistent with the designation of the 3.01 and 3.285 eV bands to eA and DAP transitions, and the temperature dependence measure-ments shown in Figure 4 provide further support. The 24 meV separation of the peaks of the eA and DAP bands is within the range of the currently proposed values of the silicon donor binding energy of between 17 and 30 meV [15].…”

Section: Resultssupporting

confidence: 81%

“…The inset to Figure 2 shows higher spectral resolution temperature dependent PL spectra from the 10 ° epilayer in the vicinity of the D 0 X peak (energy range 3.43 to 3.51 eV), revealing a higher energy peak ≈ 6 meV from the D 0 X band. From this energy splitting and from the temperature dependence of the PL shown in the inset, we tentatively attribute this peak to free exciton (FX) luminescence [15].…”

Section: Methodsmentioning

confidence: 81%

“…This conclusion is supported by previous studies. The 3.459 eV peak we attribute to an acceptor bound exciton (A 0 X) transition [15]. The 3.41 eV peak has been assigned to a donor to valence band (D 0 h) transition associated with structural defects [16], or to excitons bound to either stacking faults [17] or screw dislocations [18] in GaN films grown on off-axis SiC substrates.…”

Section: Resultsmentioning

confidence: 99%

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Properties of GaN epilayers grown on misoriented sapphire substrates

Trager-Cowan

McArthur

Middleton

et al. 1998

MRS Internet j. nitride semicond. res.

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Three silicon-doped 3 µ m thick GaN epilayers were grown simultaneously by metalorganic chemical vapour deposition on (0001) sapphire substrates misorientated by 0 ° , 4 ° and 10 ° toward the m-plane (1010). A comparative study of these epilayers was undertaken using photoluminescence (PL) spectroscopy, atomic force microscopy (AFM), scanning electron microscopy (SEM), cathodoluminescence (CL) imaging, CL spectroscopy and Hall effect measurements. Low temperature PL of the 0 ° and 4 ° epilayers shows donor bound exciton (BE) emission between 3.47 and 3.48 eV and a low level of yellow band emission. The peak intensities of both emission bands are a factor of 2 higher for the 4 ° layer. In the 10 ° epilayer, the BE band is 3x stronger than in the 0 ° epilayer but there is no discernible yellow band. However, a number of additional bands appear at 3.459, 3.417, 3.362, 3.345, 3.309, and 3.285 eV. These bands, some of which are acceptor related, may be attributed to the presence of structural defects in this epilayer, pointing to an abrupt degradation of its structural quality compared to the others. This degradation is confirmed by AFM studies. On a 20 µ m x 20 µ m image the 0 ° and 4 ° epilayers exhibit smooth surface morphologies, while the 10 ° epilayer shows a high density of hexagonal pits. Finally, SEM images reveal the surface of the 10 ° epilayer to be "streaked" and pitted. Low temperature CL images at 3.48 eV (bound exciton region) show random spotty emission, while those at 3.28 eV and 3.41 eV exhibit a streaky appearance similar to the SEM image. This suggests that these luminescence bands are indeed associated with structural defects.

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Section: Resultssupporting

confidence: 81%

Section: Methodsmentioning

confidence: 81%

Section: Resultsmentioning

confidence: 99%

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