Forcing of chaos in semiconductor superlattices

Bonilla, L. L.; Bulashenko, O. M.

doi:10.1006/spmi.1996.0326

Cited by 1 publication

(1 citation statement)

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“…[247] predicted chaos in driven, weakly coupled SLs by solving the discrete drift model under ac + dc voltage bias with fixed excess electron density in the first SL well. Their results [247][248][249][250] can be illustrated as follows. Let the dc voltage be fixed at a value on the second plateau of the I -V characteristics of a 40-period SL such that, in the absence of ac driving, there are self-oscillations of the current due to the periodic monopole motion.…”

Section: Theorymentioning

confidence: 99%

Non-linear dynamics of semiconductor superlattices

2005

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In the last decade, non-linear dynamical transport in semiconductor superlattices (SLs) has witnessed significant progress in theoretical descriptions as well as in experimentally observed non-linear phenomena. However, until now, a clear distinction between non-linear transport in strongly and weakly coupled SLs was missing, although it is necessary to provide a detailed description of the observed phenomena. In this review, strongly coupled SLs are described by spatially continuous equations and display self-sustained current oscillations due to the periodic motion of a charge dipole as in the Gunn effect for bulk semiconductors. In contrast, weakly coupled SLs have to be described by spatially discrete equations. Therefore, weakly coupled SLs exhibit a more complex dynamical behaviour than strongly coupled ones, which includes the formation of stationary electric field domains, pinning or propagation of domain walls consisting of a charge monopole, switching between stationary domains, self-sustained current oscillations due to the recycling motion of a charge monopole and chaos. This review summarizes the existing theories and the experimentally observed non-linear phenomena for both types of semiconductor SLs.

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