1999
DOI: 10.1116/1.590673
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Formation and growth of CoSi2 on (001)Si inside 0.2–2 μm oxide openings prepared by electron-beam lithography

Abstract: The formation and growth of CoSi2 inside 0.2–2 μm linear oxide openings and contact holes prepared by electron-beam lithography have been investigated. A thin, uniform epitaxial CoSi2 was grown inside 0.5 μm or smaller linear openings and 0.7 μm or smaller contact holes by both one- and two-step rapid thermal annealing processes. On the other hand, epitaxial and polycrystalline CoSi2 were found to form on silicon near the edge and central region, respectively, inside 0.6 μm or larger linear openings. The size … Show more

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Cited by 9 publications
(2 citation statements)
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“…For example, local stresses inherent at the encroaching boundaries of oxide or spacer layers pose problems for the growth of small selfaligned silicides [14]. Decreasing critical dimension also causes a downward shift in the agglomeration temperature of silicide phases [15].…”
Section: Introductionmentioning
confidence: 99%
“…For example, local stresses inherent at the encroaching boundaries of oxide or spacer layers pose problems for the growth of small selfaligned silicides [14]. Decreasing critical dimension also causes a downward shift in the agglomeration temperature of silicide phases [15].…”
Section: Introductionmentioning
confidence: 99%
“…13 Decreasing critical dimension also causes a downward shift in the agglomeration temperature of silicide phases. For example, local stresses inherent at the encroaching boundaries of oxide or spacer layers pose problems for the growth of small self-aligned silicides.…”
Section: Introductionmentioning
confidence: 99%