Effects of stress on the formation and growth of nickel silicides in Ni thin films on (001)Si

Li, Cheng; Lo, H.M.; Cheng, Sheng-Tzong; Chen, L.J.; Tsai, Chia-Lung

doi:10.1016/j.msea.2005.05.106

Cited by 11 publications

(4 citation statements)

References 8 publications

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“…These works shared valuable information on nickel silicide formation at nanoscale, although there is still a lack of systematic studies on the formation of different silicide phases at different conditions, or geometries. Importantly, it has also been suggested that the silicide phase transformation temperature may vary under the influence of stress in the finite dimensions. − This phenomenon will become increasing important at nanoscale where the interfacial energy and stress pile-up may play an important role to induce the formation of different phases. Herein, we report the systematic studies on the phase formation of nickel silicides in Si NWs and Si/SiOx core/shell NWs to explore the phase formation sequences and the stress influence on silicides formation in one-dimensional nanostructures.…”

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Growth of Nickel Silicides in Si and Si/SiOx Core/Shell Nanowires

Lin¹,

Chen²,

Xu³

et al. 2010

Nano Lett.

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We exploited the oxide shell structure to explore the structure confinement effect on the nickel silicide growth in one-dimensional nanowire template. The oxide confinement structure is similar to the contact structure (via hole) in the thin film system or nanodevices passivated by oxide or nitride film. Silicon nanowires in direct contact with nickel pads transform into two phases of nickel silicides, Ni31Si12 and NiSi2, after one-step annealing at 550 °C. In a bare Si nanowire during the annealing process, NiSi2 grows initially through the nanowire, followed by the transformation of NiSi2 into the nickel-rich phase, Ni31Si12 starting from near the nickel pad. Ni31Si12 is also observed under the nickel pads. Although the same phase transformations of Si to nickel silicides are observed in nanowires with oxide confinement structure, the growth rate of nickel silicides, Ni31Si12 and NiSi2, is retarded dramatically. With increasing oxide thickness from 5 to 50 nm, the retarding effect of the Ni31Si12 growth and the annihilation of Ni2Si into the oxide confined-Si is clearly observed. Ni31Si12 and Ni2Si phases are limited to grow into the Si/SiOx core-shell nanowire as the shell thickness reaches 50 nm. It is experimental evidence that phase transformation is influenced by the stressed structure at nanoscale.

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Growth of Nickel Silicides in Si and Si/SiOx Core/Shell Nanowires

Lin¹,

Chen²,

Xu³

et al. 2010

Nano Lett.

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“…Compressive stress has been shown to significantly retard the formation of Ni 2 Si, NiSi, and NiSi 2 on Si(100) substrates, 26 while tensile stress was found to enhance silicide formation. The formation of NiSi 2 is nucleation controlled, similar to that of CoSi 2 .…”

Section: Discussionmentioning

confidence: 99%

Effect of high temperature deposition on CoSi2 phase formation

Comrie

Ahmed

Smeets

et al. 2013

Journal of Applied Physics

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This paper discusses the nucleation behaviour of the CoSi to CoSi 2 transformation from cobalt silicide thin films grown by deposition at elevated substrate temperatures ranging from 375 C to 600 C. A combination of channelling, real-time Rutherford backscattering spectrometry, real-time x-ray diffraction, and transmission electron microscopy was used to investigate the effect of the deposition temperature on the subsequent formation temperature of CoSi 2 , its growth behaviour, and the epitaxial quality of the CoSi 2 thus formed. The temperature at which deposition took place was observed to exert a significant and systematic influence on both the formation temperature of CoSi 2 and its growth mechanism. CoSi films grown at the lowest temperatures were found to increase the CoSi 2 nucleation temperature above that of CoSi 2 grown by conventional solid phase reaction, whereas the higher deposition temperatures reduced the nucleation temperature significantly. In addition, a systematic change in growth mechanism of the subsequent CoSi 2 growth occurs as a function of deposition temperature. First, the CoSi 2 growth rate from films grown at the lower reactive deposition temperatures is substantially lower than that grown at higher reactive deposition temperatures, even though the onset of growth occurs at a higher temperature, Second, for deposition temperatures below 450 C, the growth appears columnar, indicating nucleation controlled growth. Elevated deposition temperatures, on the other hand, render the CoSi 2 formation process layer-by-layer which indicates enhanced nucleation of the CoSi 2 and diffusion controlled growth. Our results further indicate that this observed trend is most likely related to stress and changes in microstructure introduced during reactive deposition of the CoSi film. The deposition temperature therefore provides a handle to tune the CoSi 2 growth mechanism. V C 2013 AIP Publishing LLC. [http://dx

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“…La Via, Nikitina, Cao. [3,5 -7] The main conclusions so far regarding silicide formation on SiC are as follows: (i) the main silicide formed is Ni 2 Si (which is different from that formed on Si, where NiSi 2 prevails [5,8] ); (ii) carbon is expelled due to the reaction between the Ni and SiC; the C is found in a top nanometre layer and it is also distributed in various ways inside the reaction layer and in some cases at the silicide/SiC interface; (iii) high temperature annealing of above 800-1000…”

Section: Introductionmentioning

confidence: 99%

Initial formation of contact layers on Ni/SiC samples studied by XPS

Pérez‐García

Cao

Nyborg

2008

Surface & Interface Analysis

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a very thin (1-2 nm) film. In neither case, the Ni 2 Si covers the whole surface, although the coverage is almost complete (∼90%) in the latter case. For the greater initial Ni-film thickness of 17 nm, the thickness of the Ni 2 Si product corresponds well to the value of 25 nm expected from the Ni/Ni 2 Si stoichiometric relationship. This thickness is significantly greater than a critical level and the film covers the whole surface. Carbon is similarly accumulated in a very thin layer on the top surface, although the major part of C (∼70%) is found inside the main reaction product layer.

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Effects of stress on the formation and growth of nickel silicides in Ni thin films on (001)Si

Cited by 11 publications

References 8 publications

Growth of Nickel Silicides in Si and Si/SiOx Core/Shell Nanowires

Growth of Nickel Silicides in Si and Si/SiOx Core/Shell Nanowires

Effect of high temperature deposition on CoSi2 phase formation

Initial formation of contact layers on Ni/SiC samples studied by XPS

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