Initial formation of contact layers on Ni/SiC samples studied by XPS

Abstract

a very thin (1-2 nm) film. In neither case, the Ni 2 Si covers the whole surface, although the coverage is almost complete (∼90%) in the latter case. For the greater initial Ni-film thickness of 17 nm, the thickness of the Ni 2 Si product corresponds well to the value of 25 nm expected from the Ni/Ni 2 Si stoichiometric relationship. This thickness is significantly greater than a critical level and the film covers the whole surface. Carbon is similarly accumulated in a very thin layer on the top surface, although the major part of C (∼70%) is found inside the main reaction product layer.

Self-Assembly Growth of 3D WO3Framework with Interpenetrated Nanosheets as Binder-Free Anode for Lithium Ion Batteries

“…The etched rate calibrated on Ta 2 O 5 is 0.23 nm s −1 , and the etched depths are 2.3, 4.6, 6.9, and 9.2 nm respectively. 27 As shown in Fig. 4a, Ag, W and O elements are detected in the XPS survey spectra.…”