Formation and multiplication of basal plane dislocations during physical vapor transport growth of 4H-SiC crystals

Nakano, Takahiro; Shinagawa, Naoto; Yabu, Masahiro; Ohtani, Noboru

doi:10.1016/j.jcrysgro.2019.03.027

Cited by 16 publications

(9 citation statements)

References 14 publications

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“…It is reported that during the PVT growth of 4H-SiC single crystals, a large amount of thermoelastic shear stress caused by a temperature gradient in the crystal is introduced in the nonfacet region, while the facet region is almost none, − which may forbid the expansion of SFs (3,3) generated in the nonfacet region. In order to verify the stress distribution across the facet and nonfacet regions, we plot the FTO-peak mapping of the region in Figure (b).…”

Section: Resultsmentioning

confidence: 99%

“…35 In addition, the FTO-peak positions of SFs (3,3) tending to abruptly shift toward higher wavenumbers always occurs, implying that the compressive strain exists in SFs (3,3). 38,40 This indicates that the shear stress exerted in the nonfacet region is released by the formation and expansion of SFs (3,3), due to the low formation energies of SFs in n-type 4H-SiC. Once the expansion of SFs (3,3) reaches the interface of the facet and nonfacet regions, the compressive stress impedes the expansion of SFs (3,3).…”

Section: Resultsmentioning

confidence: 99%

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Role of the Growth Facet on the Generation and Expansion of Stacking Faults in PVT-Grown n-Type 4H-SiC Single-Crystal Boules

et al. 2023

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The generation and expansion of stacking faults (SFs) during the physical-vapor-transport (PVT) growth of n-type 4H-SiC single-crystal boules are investigated by combining photochemical etching, transmission electron microscopy, microphotoluminescence, and micro-Raman investigations. SFs with the Si−C bilayer stacking sequence of (3,3) in Zhdanov's notation are found near the seed crystal of the n-type 4H-SiC. Interestingly, we find that the facet region of the n-type 4H-SiC single-crystal boule is free of SFs (3,3). Most of the SFs (3,3) are constrained in the nonfaceted region of n-type 4H-SiC. Micro-Raman analysis indicates that the shear stress exerted in the nonfacet region gives rise to the formation and expansion of SFs (3,3), which releases the shear stress during the PVT growth of n-type 4H-SiC single-crystal boules. Due to the differences of nitrogen concentrations and growth velocities between the facet and nonfacet regions of the n-type 4H-SiC single-crystal boule, high compressive stress appears in the interface of the facet and nonfacet regions, which impedes the expansion of SFs (3,3). Furthermore, the shear stress in the facet region of a PVT-grown n-type 4H-SiC single-crystal boule is nearly zero, which eliminates the generation and expansion of SFs in the 4H-SiC single-crystal boule.

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Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

Role of the Growth Facet on the Generation and Expansion of Stacking Faults in PVT-Grown n-Type 4H-SiC Single-Crystal Boules

et al. 2023

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“…This is also true for the radial temperature gradient. It was demonstrated numerically and experimentally that, from the shoulder region of a crystal, BPD arrays form and propagate into the crystal [ 177 , 178 ]. Therefore, low radial and axial gradients are preferred, without either inducing a concave growth interface or reducing the mass transport between source and seed too much.…”

Section: Silicon Carbide Materialsmentioning

confidence: 99%

Novel Photonic Applications of Silicon Carbide

Shi

et al. 2023

Materials

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Silicon carbide (SiC) is emerging rapidly in novel photonic applications thanks to its unique photonic properties facilitated by the advances of nanotechnologies such as nanofabrication and nanofilm transfer. This review paper will start with the introduction of exceptional optical properties of silicon carbide. Then, a key structure, i.e., silicon carbide on insulator stack (SiCOI), is discussed which lays solid fundament for tight light confinement and strong light-SiC interaction in high quality factor and low volume optical cavities. As examples, microring resonator, microdisk and photonic crystal cavities are summarized in terms of quality (Q) factor, volume and polytypes. A main challenge for SiC photonic application is complementary metal-oxide-semiconductor (CMOS) compatibility and low-loss material growth. The state-of-the-art SiC with different polytypes and growth methods are reviewed and a roadmap for the loss reduction is predicted for photonic applications. Combining the fact that SiC possesses many different color centers with the SiCOI platform, SiC is also deemed to be a very competitive platform for future quantum photonic integrated circuit applications. Its perspectives and potential impacts are included at the end of this review paper.

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“…The physical model is also supported by Raman measurements, as shown in figure 4(c). Raman spectra along the growth direction indicate that the peak position of the E 2 mode shifts abruptly where bunched BPDs existed, indicating that the bunched BPDs are introduced at the domed surface and are hardly introduced from the side surfaces of the grown crystals [49]. The most plausible location where BPDs are introduced would be the shoulder regions of growth crystals.…”

Section: Generation Of Dislocationsmentioning

confidence: 99%

Dislocations in 4H silicon carbide

Li¹,

Zhang²,

Liu³

et al. 2022

J. Phys. D: Appl. Phys.

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Owning to the superior properties of the wide bandgap, high carrier mobility, high thermal conductivity and high stability, 4H silicon carbide (4H-SiC) holds great promise for the applications of electrical vehicles, 5G communications and new-energy systems. Although the industrialization of 150 mm 4H-SiC substrates and epitaxial layers has been successfully achieved, the existence of high density of dislocations is one of the most important bottlenecks for advancing the device performance and reliability of 4H-SiC based high-power and high-frequency electronics. In this topical review, the classification and basic properties of dislocations in 4H-SiC wafers and epitaxial layers are introduced. The generation, evolution and annihilation of dislocations during the single-crystals growth of 4H-SiC boules, the processing of 4H-SiC wafers, as well as the homoepitaxy of 4H-SiC layers are systematically reviewed. The characterization and discrimination of dislocations in 4H-SiC are presented. The effect of dislocations on the electronic and optical properties of 4H-SiC wafers and epitaxial layers, as well as the role of dislocations on the device performance and reliability are finally presented. This topical review provides insight into the fundamentals and evolution of dislocations in 4H-SiC, and is expected to provide inspiration for further manipulation of dislocations in 4H-SiC.

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Formation and multiplication of basal plane dislocations during physical vapor transport growth of 4H-SiC crystals

Cited by 16 publications

References 14 publications

Role of the Growth Facet on the Generation and Expansion of Stacking Faults in PVT-Grown n-Type 4H-SiC Single-Crystal Boules

Role of the Growth Facet on the Generation and Expansion of Stacking Faults in PVT-Grown n-Type 4H-SiC Single-Crystal Boules

Novel Photonic Applications of Silicon Carbide

Dislocations in 4H silicon carbide

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