No abstract

The populations and propagation behaviors of pure and mixed threading screw dislocations (TSDs) in physical vapor transport (PVT) grown 4H-SiC crystals were investigated using X-ray topography. The X-ray topography studies revealed that mixed TSDs, which have a Burgers vector component within the basal plane in addition to the c-component, were dominant in PVT-grown 4H-SiC crystals, even though they have a higher energy contained in the elastic field around them compared to pure TSDs. The studies also revealed that mixed TSDs tended to propagate in a specific direction inclined from the c-axis, whereas pure TSDs were often converted into helical dislocations during the PVT growth. Based on these results, we discussed the nature and propagation behavior of pure and mixed TSDs in PVT-grown 4H-SiC crystals and suggested an importance of the interaction between TSDs and point defects during PVT growth of 4H-SiC.

The aim of this research is to clarify a quantitative evaluation in the structural relaxation processes focusing on the activation energy in Cu based amorphous alloys. The activation energy for structural relaxation process in a metal type amorphous CuHfTi ternary alloys, with cross sections of typically 0.03 mm x 2.0 mm, prepared by chill-block melt spinning has been investigated by Differential Scanning Calorimetry (DSC) with a cyclically heating technique. Activation energies for structural relaxation with a spatial quantity in amorphous materials have been discussed by use of a relaxed ratio function that depends on annealing temperature and time. In the present work, the distributions for the Activation Energy Spectrum (AES) were observed almost 152 kJmol-1 (1.58 eV). Another result has been also established that the “reversible” AES model energy distribution though the cyclically structure relaxation occurs even in amorphous Cu60Hf20Ti20 alloy.

No abstract

No abstract