Structural characterization of the growth front of physical vapor transport grown 4H-SiC crystals using X-ray topography

Sonoda, Masashi; Nakano, Takahiro; Shioura, Kentaro; Shinagawa, Naoto; Ohtani, Noboru

doi:10.1016/j.jcrysgro.2018.07.029

Cited by 11 publications

(9 citation statements)

References 13 publications

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“…It is reported that during the PVT growth of 4H-SiC single crystals, a large amount of thermoelastic shear stress caused by a temperature gradient in the crystal is introduced in the nonfacet region, while the facet region is almost none, − which may forbid the expansion of SFs (3,3) generated in the nonfacet region. In order to verify the stress distribution across the facet and nonfacet regions, we plot the FTO-peak mapping of the region in Figure (b).…”

Section: Resultsmentioning

confidence: 99%

Role of the Growth Facet on the Generation and Expansion of Stacking Faults in PVT-Grown n-Type 4H-SiC Single-Crystal Boules

et al. 2023

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The generation and expansion of stacking faults (SFs) during the physical-vapor-transport (PVT) growth of n-type 4H-SiC single-crystal boules are investigated by combining photochemical etching, transmission electron microscopy, microphotoluminescence, and micro-Raman investigations. SFs with the Si−C bilayer stacking sequence of (3,3) in Zhdanov's notation are found near the seed crystal of the n-type 4H-SiC. Interestingly, we find that the facet region of the n-type 4H-SiC single-crystal boule is free of SFs (3,3). Most of the SFs (3,3) are constrained in the nonfaceted region of n-type 4H-SiC. Micro-Raman analysis indicates that the shear stress exerted in the nonfacet region gives rise to the formation and expansion of SFs (3,3), which releases the shear stress during the PVT growth of n-type 4H-SiC single-crystal boules. Due to the differences of nitrogen concentrations and growth velocities between the facet and nonfacet regions of the n-type 4H-SiC single-crystal boule, high compressive stress appears in the interface of the facet and nonfacet regions, which impedes the expansion of SFs (3,3). Furthermore, the shear stress in the facet region of a PVT-grown n-type 4H-SiC single-crystal boule is nearly zero, which eliminates the generation and expansion of SFs in the 4H-SiC single-crystal boule.

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Section: Resultsmentioning

confidence: 99%

Role of the Growth Facet on the Generation and Expansion of Stacking Faults in PVT-Grown n-Type 4H-SiC Single-Crystal Boules

et al. 2023

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“…Besides inheritance from the seed and generation by the thermoelastic stress, the nucleation region also plays an important role in the generation and multiplication of BPDs. According to the surface morphologies, the growth front of a 4H-SiC boule can be divided into the facet region, non-facet region, and the intermediate region between them (figure 4(a)) [48]. The formation kinetics of dislocations is different in these regions.…”

Section: Generation Of Dislocationsmentioning

confidence: 99%

“…XRT observations revealed that BPDs are nucleated in the shoulder region of the growth front, which may originate from the shear stresses on the convex growth front. BPDs are rarely introduced in the facet and near-facet regions of the grown boule [48]. The dislocation lines of BPDs are terminated when they extend to the facet and near-facet regions, which reduces the BPD density and even creates BPD-free region beneath these regions, as illustrated in figure 4(b).…”

Section: Generation Of Dislocationsmentioning

confidence: 99%

Dislocations in 4H silicon carbide

Li¹,

Zhang²,

Liu³

et al. 2022

J. Phys. D: Appl. Phys.

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Owning to the superior properties of the wide bandgap, high carrier mobility, high thermal conductivity and high stability, 4H silicon carbide (4H-SiC) holds great promise for the applications of electrical vehicles, 5G communications and new-energy systems. Although the industrialization of 150 mm 4H-SiC substrates and epitaxial layers has been successfully achieved, the existence of high density of dislocations is one of the most important bottlenecks for advancing the device performance and reliability of 4H-SiC based high-power and high-frequency electronics. In this topical review, the classification and basic properties of dislocations in 4H-SiC wafers and epitaxial layers are introduced. The generation, evolution and annihilation of dislocations during the single-crystals growth of 4H-SiC boules, the processing of 4H-SiC wafers, as well as the homoepitaxy of 4H-SiC layers are systematically reviewed. The characterization and discrimination of dislocations in 4H-SiC are presented. The effect of dislocations on the electronic and optical properties of 4H-SiC wafers and epitaxial layers, as well as the role of dislocations on the device performance and reliability are finally presented. This topical review provides insight into the fundamentals and evolution of dislocations in 4H-SiC, and is expected to provide inspiration for further manipulation of dislocations in 4H-SiC.

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“…[13] Experimentally SiC can be synthesized by chemical vapor deposition (CVD), vapor liquid solid (VLS), and physical vapor transport (PVT). [14][15][16][17] It has been shown that the conversion efficiency of the nonstoichiometric S x iC 1-x -based p-n junction can be improved by varying the reactant fluence ratio (R) in plasma-enhanced chemical vapor deposition (PECVD). During PECVD "R" can be defined as: [18,19]…”

Section: Introductionmentioning

confidence: 99%

Tailoring Electronic Properties of 6H‐SiC with Different Composition of Silicon by First‐Principles Calculations

Sharif,

Yang,

Zhang

et al. 2024

Advcd Theory and Sims

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Silicon carbide (SiC) is used in a variety of applications including photovoltaic due to its high stability. The wide bandgap of SiC limits these applications and necessitates bandgap tuning toward lower energy for efficient solar absorption. In this regard, the electronic properties of highly stable SiC polytype 6H‐SiC are studied by first‐principles calculations. By varying the Si composition of 6H‐SiC the electronic properties are tailored. The calculated results show that increasing the Si composition of 6H‐SiC from 50% to 66.66% reduces the bandgap from 2.98 to 1.54 eV. It is observed that this reduction in bandgap occurs due to the addition of extra Si s/p orbitals which close the conduction band and valance band. From the electronic conductivity calculations, it is found that with increasing Si composition of 6H‐SiC the conductivity is improved due to higher hole density which can be verified by the spectrum peaks shifted toward near‐infrared and visible region.

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Structural characterization of the growth front of physical vapor transport grown 4H-SiC crystals using X-ray topography

Cited by 11 publications

References 13 publications

Role of the Growth Facet on the Generation and Expansion of Stacking Faults in PVT-Grown n-Type 4H-SiC Single-Crystal Boules

Role of the Growth Facet on the Generation and Expansion of Stacking Faults in PVT-Grown n-Type 4H-SiC Single-Crystal Boules

Dislocations in 4H silicon carbide

Tailoring Electronic Properties of 6H‐SiC with Different Composition of Silicon by First‐Principles Calculations

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