Structural characterization of the grown crystal/seed interface of physical vapor transport grown 4H-SiC crystals using Raman microscopy and x-ray topography

Shioura, Kentaro; Shinagawa, Naoto; Izawa, Takuto; Ohtani, Noboru

doi:10.1016/j.jcrysgro.2019.03.015

Cited by 13 publications

(8 citation statements)

References 20 publications

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“…In Figure 2 a, the initial seeding phase of crystal A is depicted with the seed area on the left and the grown crystal on the right. Both the seed area and the area of the grown crystal exhibit high amounts of defects arranged in a dislocation pattern similar to the observations of Shioura et al [ 18 ]. The seed area is mainly covered by BPDs, while the area of the grown crystal is defined by stacking faults (SF), which in turn are restricted by more accumulated defects of presumed threading character (see inset and Figure 3 f).…”

Section: Resultssupporting

confidence: 86%

“…This stress is caused by the axial and radial temperature gradients present in the seed. In this case, the model suggested by Shioura et al fits nicely for the dislocations observed in the sample [ 18 ].…”

Section: Discussionsupporting

confidence: 62%

“…One important parameter is the axial temperature gradient present in the seed during heat up and the resulting elastic deformation before growth starts. Shioura et al [ 18 ] proposed a model explaining the effect of BPD networks appearing in the seed after growth. Furthermore, nitrogen doping influences the lattice spacing and also the coefficient of thermal expansion (CTE) [ 19 , 20 ].…”

Section: Introductionmentioning

confidence: 99%

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Impact of Mechanical Stress and Nitrogen Doping on the Defect Distribution in the Initial Stage of the 4H-SiC PVT Growth Process

Steiner

Wellmann

2022

Materials

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Nitrogen incorporation changes the lattice spacing of SiC and can therefore lead to stress during physical vapor transport (PVT). The impact of the nitrogen-doping concentration during the initial phase of PVT growth of 4H-SiC was investigated using molten potassium hydroxide (KOH) etching, and the doping concentration and stress was detected by Raman spectroscopy. The change in the coefficient of thermal expansion (CTE) caused by the variation of nitrogen doping was implemented into a numerical model to quantitatively determine the stress induced during and after the crystal growth. Furthermore, the influence of mechanical stress related to the seed-mounting method was studied. To achieve this, four 100 mm diameter 4H-SiC crystals were grown with different nitrogen-doping distributions and seed-mounting strategies. It was found that the altered CTE plays a major role in the types and density of defect present in the grown crystal. While the mounting method led to increased stress in the initial seeding phase, the overall stress induced by inhomogeneous nitrogen doping is orders of magnitude higher.

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Section: Resultssupporting

confidence: 86%

Section: Discussionsupporting

confidence: 62%

Section: Introductionmentioning

confidence: 99%

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Impact of Mechanical Stress and Nitrogen Doping on the Defect Distribution in the Initial Stage of the 4H-SiC PVT Growth Process

Steiner

Wellmann

2022

Materials

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“…The addition of the crystal seeds can make the crystallization proceed at a lower degree of supersaturation, which is beneficial to the crystal growth. [21,22] The stirring rate, final crystallization temperature, and crystallization time were kept constant at 200 r min −1 , 5 °C, and 120 min, and the effects of amount of crystal seeds added of 0%, 1%, 3%, and 5% (solute mass percentage) on particle size were investigated, respectively. The effects on D 50 and DS values are shown in Figure 2c.…”

Section: The Effect Of Amount Of Crystal Seeds Added On Particle Sizementioning

confidence: 99%

Optimization of the Crystallization Process of Bis(2‐hydroxyethyl) Terephthalate

Yuan

Liu

Sun

2021

Crystal Research and Technology

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The crystallization process of bis(2‐hydroxyethyl) terephthalate is experimentally investigated. The optimized crystals of bis(2‐hydroxyethyl) terephthalate have the median particle size (D50) of 1300 µm and a perfect crystal habit, and their diameter span reduces from 11.48 (before optimization) to 1.72 (after optimization). The results show that more oxygen atoms at both ends of the crystal are exposed to the crystal surfaces, which make it easy to form hydrogen bonds with free bis(2‐hydroxyethyl) terephthalate. Therefore, the crystal surfaces at both ends grow fastest and tend to disappear eventually.

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“…If the crystal is firmly connected to graphite parts, such as the seed holder or the crucible wall, during cool-down, the different CTEs of SiC and graphite will lead to stress and the generation of BPDs before reaching the ductile-brittle transition temperature of 1050 °C [ 174 ]. However, even if all contact to graphite is prevented, the temperature gradients inside the crystal before cooling down will induce stress once room temperature is reached [ 175 , 176 ]. This is also true for the radial temperature gradient.…”

Section: Silicon Carbide Materialsmentioning

confidence: 99%

Novel Photonic Applications of Silicon Carbide

Shi

et al. 2023

Materials

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Silicon carbide (SiC) is emerging rapidly in novel photonic applications thanks to its unique photonic properties facilitated by the advances of nanotechnologies such as nanofabrication and nanofilm transfer. This review paper will start with the introduction of exceptional optical properties of silicon carbide. Then, a key structure, i.e., silicon carbide on insulator stack (SiCOI), is discussed which lays solid fundament for tight light confinement and strong light-SiC interaction in high quality factor and low volume optical cavities. As examples, microring resonator, microdisk and photonic crystal cavities are summarized in terms of quality (Q) factor, volume and polytypes. A main challenge for SiC photonic application is complementary metal-oxide-semiconductor (CMOS) compatibility and low-loss material growth. The state-of-the-art SiC with different polytypes and growth methods are reviewed and a roadmap for the loss reduction is predicted for photonic applications. Combining the fact that SiC possesses many different color centers with the SiCOI platform, SiC is also deemed to be a very competitive platform for future quantum photonic integrated circuit applications. Its perspectives and potential impacts are included at the end of this review paper.

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Structural characterization of the grown crystal/seed interface of physical vapor transport grown 4H-SiC crystals using Raman microscopy and x-ray topography

Cited by 13 publications

References 20 publications

Impact of Mechanical Stress and Nitrogen Doping on the Defect Distribution in the Initial Stage of the 4H-SiC PVT Growth Process

Impact of Mechanical Stress and Nitrogen Doping on the Defect Distribution in the Initial Stage of the 4H-SiC PVT Growth Process

Optimization of the Crystallization Process of Bis(2‐hydroxyethyl) Terephthalate

Novel Photonic Applications of Silicon Carbide

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