Formation and passivation of defects in heterostructures with strained GaAs/InGaAs quantum wells as a result of treatment in a hydrogen plasma

Spatial-temporal redistribution of point defects in three-layer stressed nanoheterosystems within the limits of self-assembled deformation-diffusion model

“…The effect of impoverishment (enrichment) in the interlayer of vacancies (interstitial atoms) has been observed in experimental works [6,10] after the growth (decline) of the intensity of photoluminescence in stressed nanoheterostructures.…”

“…In experimental work [6], it is shown that in a heterostructure GaAs/In x Ga 1−x As, the stressed quantum-size heterolayers hamper the diffusion of hydrogen and defects into the bulk of the material which leads to a substantial difference of their spatial distribution in a heterostructure and homogeneous layers. Theoretical research of the stationary distribution of defects within the framework of the self-assembled deformation-diffusion model has been considered in the work [7].…”

Pressure Effects on the Percolation Behavior of Systems Based on Polyethylene Oxide and Carbon Nanotubes

“…Simultaneously, the temperature change leads to the variation in the diffusion coefficients of the chlorine and hydrogen impurities and, accordingly, to the spatial shift of the positions of their concentration maxima. The calculations were carried out for the time moment ≫ growth, which can be explained by the hydrogeninduced passivation of non-radiative recombination centers [1,[10][11][12][13]. However, in heterostructures with stressed quantum wells, the passivation degree of defects is much lower [10,13].…”

“…The calculations were carried out for the time moment ≫ growth, which can be explained by the hydrogeninduced passivation of non-radiative recombination centers [1,[10][11][12][13]. However, in heterostructures with stressed quantum wells, the passivation degree of defects is much lower [10,13]. It is so because the stressed layers can slow down the diffusion of defects and impurities.…”

Dispersion Law and the Dependence of the Surface Acoustic Mode Width on the Concentration of Adsorbed Atoms

“…The method of surface acoustic waves (SAWs) has been widely used recently to study the dynamic parameters (dynamic conductivity, charge carrier mobility, and concentration) of two-dimensional electron layers in Al 1− Ga As heterostructures [1][2][3], which demonstrate piezoelectric properties. Nanoheterosystems with strained GaAs/In 1− Ga As/GaAs [4], Cd 1− Zn Te/CdTe/Cd 1− Zn Te [5,6], and CdTe/HgTe [6] layers are characterized by both non-uniform deformation and non-uniform piezoelectric fields. An SAW generates an alternating electric field and a dynamic deformation field.…”