2002
DOI: 10.1016/s0257-8972(01)01637-1
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Formation mechanism of C/SiC/C multi-layers during self-propagating high-temperature synthesis

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Cited by 12 publications
(5 citation statements)
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“…The possible contamination of oxygen from the ambient and hydrogen in the CVD precursors will be incorporated into the films during deposition to affect C and Si reaction. Kim et al [13] studied the formation mechanism of C/SiC/C multilayer by the CVD combustion reaction of silicon powder and carbon black or carbon fiber at temperatures above 1200°C with a base pressure of 10 − 4 Pa. Aoki et al [14] reported the deposition of the SiC/C on C/C composites by CVD at a high temperature of 1200°C using SiCl 4 , C 3 H 8 and H 2 . They could suppress the cracks in the layers by suppressing oxidation of the composites.…”
Section: Introductionmentioning
confidence: 99%
“…The possible contamination of oxygen from the ambient and hydrogen in the CVD precursors will be incorporated into the films during deposition to affect C and Si reaction. Kim et al [13] studied the formation mechanism of C/SiC/C multilayer by the CVD combustion reaction of silicon powder and carbon black or carbon fiber at temperatures above 1200°C with a base pressure of 10 − 4 Pa. Aoki et al [14] reported the deposition of the SiC/C on C/C composites by CVD at a high temperature of 1200°C using SiCl 4 , C 3 H 8 and H 2 . They could suppress the cracks in the layers by suppressing oxidation of the composites.…”
Section: Introductionmentioning
confidence: 99%
“…Indeed, the in-flight alumina-titania particle temperature was directly measured using a DPV-2000 in our other work. [9] The temperature was increased with the increase of hydrogen gas flow rate at the constant argon flow rate. This was due to the increase of the arc voltage and resulting increase of arc power and plasma jet enthalpy.…”
Section: Resultsmentioning
confidence: 99%
“…The DTA/DSC based methods are the most widely used for gasless SHS systems, with multiple studies into intermetallics, specifically the Ni/Al [35][36][37][38][39][40][41][42][43], Ti/Al [44][45][46], Co/Al [47], Al/Ru [48], Nb/Al [49], and Mg/Al [50] systems, in addition to other binary solid-solid compositions, i.e., the Si/C [51], Mo/Si [52], Zr/B [53], Fe/Se [54]. More complicated ternary systems were also investigated [54][55][56][57][58][59][60][61]. In general, a wide variety of factors can influence the measured kinetics, including variations in reactant microstructure, heating rates, among other factors.…”
Section: Differential Thermal Analysis/differential Scanning Calorimetrymentioning
confidence: 99%