Formation mechanism of parallel twins related to Si-facetted dendrite growth

Relationship between dislocation density and nucleation of multicrystalline silicon

“…The twins are therefore most likely a growth phenomenon rather than a deformation phenomenon, a conclusion also supported by energetic calculations [22]. Fujiwara et al [23] suggested ig. 5.…”

The dynamics of coarsening in highly anisotropic systems: Si particles in Al–Si liquids

“…Twins are well known to act as a source of steps. For example, the presence of at least two such twin planes can give rise to the twin plane re-entrant edge (TPRE) mechanism: growth on the re-entrant corners generates more re-entrant corners, thereby providing unlimited steps for interfacial attachment and detachment [18,19,68,69]. Thus, the rate of growth at the multiply twinned particle edges is limited by the rate at which solute atoms diffuse to the surface.…”

“…Thus, defects can play a critical role in providing the steps necessary for interfacial propagation. One example is the twin plane re-entrant edge (TPRE) mechanism for the growth of Si dendrites in the {1 1 2} direction [18,19]. Recently, Gamalski et al [20] suggested that the presence of the twin, by itself, does not reduce the barrier for nucleation of steps; rather, the barrier is effectively reduced by the line energy.…”

Simulating Interface Growth and Defect Generation in CZT – Simulation State of the Art and Known Gaps

“…Figure 9 shows another model of parallel-twin formation at crystal-melt interface during crystal growth. When a twin boundary is accidentally formed on a (111)-facet plane, another twin boundary is formed parallel to the first twin after lateral growth is promoted [89,135]. Twin nucleation at TPB was observed [89,127,136,137].…”