Formation of 0.05- mu m p/sup +/-n and n/sup +/-p junctions by very low (&lt;500 eV) ion implantation

Bousetta, A.; Berg, Jaap van den; Armour, D.G.

doi:10.1109/55.145043

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Cited by 7 publications

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et al. 1993

Nuclear Instruments and Methods in Physics Research Section B:

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Structural and electrical properties of p+n junctions in Si by low energy Ga+ implantation

Parry

Whall

Parker

1997

Journal of Applied Physics

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Ultrashallow p+n junctions have been formed in silicon by low energy (5.5 keV) Ga+ implantation into n-type substrates. This avoids the use implantation of molecular species such as BF2+ or preamorphization with Ge+ or Si+, which degrade the integrity of p+n junctions in metastably strained SixGe1−x layers. High resolution secondary ion mass spectroscopy measurements indicate an implant peak at less than 10 nm, except for postanneal temperatures above 800 °C, for which severe loss of profile control was observed. Electrical characteristics of the implanted junctions were determined from diode current–voltage measurements and Hall data. At low anneal temperatures, these showed good rectification behavior, with an ideality factor of 1.1±0.1 and a reverse bias leakage of ≈3 μA cm−2 in a relatively large junction area of 5×10−2 cm2. The electrical properties of the p+n junctions were found to be sensitive to implant dose, improving with increasing dose. At 580 °C, implant doses were achieved that were completely activated at levels above previously published Ga equilibrium solubility data. For temperatures of 800 °C, reverse annealing occurred, observed as a reduction in carrier concentration with increasing anneal time and severe profile broadening.

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Formation of 0.05- mu m p/sup +/-n and n/sup +/-p junctions by very low (<500 eV) ion implantation

Cited by 7 publications

References 15 publications

Enabling Processes and Integration

Enabling Processes and Integration

Photon assisted implantation (PAI)

Structural and electrical properties of p+n junctions in Si by low energy Ga+ implantation

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