We report the growth of thin carbon nitride films on Si(100) substrates at temperatures in the range of 100–700 °C using electron-beam evaporation of graphite assisted with electron cyclotron resonance (ECR) plasma generated nitrogen species. The effect of the substrate temperature, and the nitrogen flow on the composition ratio C/N, and the C—N bonding were investigated using Fourier transform infrared spectroscopy (FTIR), x-ray photoelectron spectroscopy (XPS), Rutherford backscattering spectroscopy (RBS), and Raman spectroscopy. The FTIR spectra show that the films produced exhibit a very high visible to infrared transmittance (0.85–0.95). These spectra were dominated by amine group (NH2) with the presence of C-N stretching modes. From both RBS and XPS, the nitrogen concentration in the film was calculated and was found in the range of 24%–48%, depending on the nitrogen partial pressure in the ECR source. Raman spectrum of the high nitrogen content thin film shows a well resolved peak at 1275 cm−1 suggesting the formation of a fourfold coordinated (sp3) CN film.

Transition from amorphous boron carbide to hexagonal boron carbon nitride thin films induced by nitrogen ion assistance Nitrogen ion beam-assisted pulsed laser deposition of boron nitride films J. Appl. Phys. 83, 3398 (1998); 10.1063/1.367107Microstructure of highly oriented, hexagonal, boron nitride thin films grown on crystalline silicon by radio frequency plasmaassisted chemical vapor deposition Microstructure of cubic boron nitride thin films grown by ionassisted pulsed laser deposition

Electron cyclotron resonance (ECR) plasma-assisted vapor deposition has been used to grow thin carbon nitride films on Si(100) and sapphire substrates. The composition, structure, and optical properties of the films were investigated by x-ray photoelectron spectroscopy (XPS), Rutherford backscattering (RBS), Raman, and optical absorption spectroscopies. The effect of varying the nitrogen gas flow, at constant substrate temperature and carbon deposition rate, on the C/N composition ratio and the CxNy crystal structure was investigated. From both RBS and XPS, the nitrogen concentration in the film was found to be in the range of 20%–48% and varied directly with the nitrogen partial pressure in the ECR source. In CN films with low nitrogen content, the Raman spectra showed no evidence of CN bonding and were characteristic of graphitic carbon. In contrast, the Raman spectra of high nitrogen content thin films show a wide peak at 1291 cm−1, suggesting the formation of a CxNy phase with predominately sp3 bonding. The optical band gap of CN films deposited on sapphire was found to be about 1.95 eV, which is below that reported for amorphous CN films, suggesting a higher structural order.

Highly cubic phase and stoichiometric boron nitride films were deposited on Si(100) substrates using a neutralized nitrogen beam and electron beam evaporation of boron. High intensity, focused, and low-energy neutralized nitrogen beam was supplied using a newly developed neutralizer atomic beam ion source (NABS) adapted to a Kaufman-type ion source. The films were grown at substrate temperatures in the range 400-500 "C and a boron evaporation rate of 0.2 A/s. Infrared transmittance spectra of the films showed that a highly cubic phase (80%) was obtained in the area of the focused beam. These films were compared to those obtained using similar conditions but with the NABS disconnected from the ion source, and it was found that the cubic phase content decreases drastically (10%). The results show that the NABS was the determining factor in enhancing the formation of the cubic boron nitride films. Furthermore, the addition of Ar to N, which is reported to increase the momentum transfer and promote the formation of the cubic phase, did not play a significant role when the NABS was used.

Today's advanced semiconductor manufacturers have well over one hundred process steps and several weeks of throughput times. In order to minimize the product at risk at final test, in line defect monitoring inspection with an adequate sampling plan are used to measure and collect defectivity levels on product wafers at key inspection steps during both process development and high-volume manufacturing phases. The sampling plan for inspection is constrained by the inspection tools available capacity whilst being driven by cost of excursions or material at risk.In this paper, key metrics such as the Variance Ratio, defined as the ratio between lot-to-lot variance and wafer-towafer variance, the Excursion Frequency, and the Normalized Mean Shift are analyzed as the sampling (%lots, #wfrs/lot) is modified. The results are then used to propose a method of monitoring and controlling these key metrics to trigger a mechanism for more or less sampling (adaptive or dynamic sampling) to better utilize the inspection resources and quicker excursion detection while minimizing the yield loss to production. INTRODUCTIONThe problem of optimally applying inspection equipment in defect inspection is very complex and only partially addressed [1]. Many IC manufacturers currently use a static sampling plan strategy to monitor and detect process and baseline defectivity excursions. In this case, the yield engineer determines the number of lots, wafers/lot, % area of wafer and the placement of where the measurements and inspections take place i.e. photo, etch, metal 1 etc. The frequency and the sensitivity of the measurement and/or inspections are also selected in advance and are rarely changed. With this method it is easier to determine the resource needed (measurement and inspection capacity) at various stage of the product life cycle.