Formation of a periodic domain structure in a-domain BaTiO3 crystals under the influence of an electric field

Prediction of a Giant Dielectric Anomaly in Ultrathin Polydomain Ferroelectric Epitaxial Films

“…Indeed these ferroelastic domain walls, in contrast to the purely ferroelectric 180 ± walls, have a thickness much larger than the unit cell size (about 100 Å in BaTiO 3 [7]) so that the lattice potential barriers hindering their translational motion must be negligible. This supposition is strongly supported by the dielectric measurements on bulk BaTiO 3 single crystals with a laminar 90 ± domain structure [8], which clearly demonstrate that displacements of the 90 ± wall can be induced even by a weak measuring field E ϳ 1 kV͞m. In addition, it has been shown [9][10][11][12][13] that the vibrational motion of 90 ± walls must contribute considerably to the dielectric response of tetragonal ferroelectric ceramics.…”

Hydrothermally fabricated epitaxial PbTiO3 patterns patterned lithographically by etching in hydrothermal KOH solution

“…͓DOI: 10.1063/1.2981576͔ Ferroelectric films are of considerable interest due to their potential applications in piezoelectric, pyroelectric, electro-optical, and micro-electro-mechanical devices. [1][2][3] One of the key requirements for the realization of these devices is a precise technique for the fabrication of structures with dimensions in the micrometer to nanometer range. Among various fabrication methods, selective wet etching is a generally used process to make patterns in single crystals such as lithium niobate ͑LN͒ and lithium tantalate ͑LT͒.…”

Soft modes of collective domain-wall vibrations in epitaxial ferroelectric thin films

“…The formation of multiple patterns of elastic domains (twins) is a characteristic feature of epitaxial ferroelectric thin films [1][2][3][4][5][6]. The experimental data [3,7] and theoretical considerations [8,9] suggest that in perovskite ferroelectrics the 90 0 domain walls (DWs) may be highly mobile on the microscopic scale even at room temperature [10]. Accordingly, the forced translational vibrations of 90 0 walls are believed to contribute considerably to the small-signal dielectric and piezoelectric responses of ferroelectric thin films [9,11].…”