2019
DOI: 10.1016/j.surfcoat.2019.124913
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Formation of Ag nanoparticles in Si (100) wafers by single and multiple low energy Ag ions implantation

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Cited by 8 publications
(3 citation statements)
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“…The SPR peak positions vary from 829 to 1271 nm, and also the peak intensity increases continuously with increasing ion fluence. An increase in the absorption together with the shift of the SPR peak to higher wavelengths after increasing implantation fluence have been reported recently in the case of 60 or 75 keV Ag irradiated Si samples [22,26], where the shift in SPR position was associated with the formation of larger number of Ag nanoparticles as the ion fluence increases, although the average size of particles was not changed. Fig.…”
Section: Optical Characterization Of Silver Implanted Si Substratessupporting
confidence: 55%
See 1 more Smart Citation
“…The SPR peak positions vary from 829 to 1271 nm, and also the peak intensity increases continuously with increasing ion fluence. An increase in the absorption together with the shift of the SPR peak to higher wavelengths after increasing implantation fluence have been reported recently in the case of 60 or 75 keV Ag irradiated Si samples [22,26], where the shift in SPR position was associated with the formation of larger number of Ag nanoparticles as the ion fluence increases, although the average size of particles was not changed. Fig.…”
Section: Optical Characterization Of Silver Implanted Si Substratessupporting
confidence: 55%
“…For instance, for the fitting of unimplanted Si a two-layer model was used consisting of crystalline silicon with a thin native oxide layer on the top of the sample. The model for the implanted and annealed Si layers was based on the amorphous Si model represented as ion-induced amorphized silicon (a-Si) or composition of a-Si and silver phases using self-consistent Maxwell-Garnett effective medium approximation [26]. for Si samples irradiated with 75 keV Ag ions in the range of 1×10 13 -1×10 16 ions/cm 2 .…”
Section: Optical Characterization Of Silver Implanted Si Substratesmentioning
confidence: 99%
“…[ 52,53 ] Obviously, the mentioned NP appearance process above is closely related to the implantation parameters (e.g., fluence, energy, and ion species), the annealing parameters (e.g., temperature, time, and atmosphere), and the matrix materials. [ 54–59 ] In general, the average size of NPs depends on the implanted fluence (normally larger than 10 16 ions cm −2 ), and the NP distribution lies on the implanted energy (range from tens of keV to several MeV). [ 60 ] The optimal annealing temperature (vary from 100 to 1000 °C) and time (tens of minutes to several hours) are strongly associated with the component of NPs and matrixes, in the meanwhile, different atmosphere shows disparate impact on the NP formation as well.…”
Section: Ion Beam Synthesis Of Nanoparticlesmentioning
confidence: 99%