Formation of AlGaN and GaN epitaxial layer with high p-carrier concentration by pulse supply of source gases

Aoyagi, Yoshinobu; Takeuchi, Misaichi; Iwai, Sohachi; Hasegawa, Hideki

doi:10.1063/1.3698156

Cited by 14 publications

(7 citation statements)

References 7 publications

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“…Great efforts have been devoted to improve p-type conduction in group-III nitrides 13 14 15 16 17 18 19 20 . Different from suppressing the charge separation effect in InGaN-based devices, polarization doping has been applied to increase the hole concentration in AlGaN alloys by ionizing Mg acceptor in the polarization field 13 14 .…”

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confidence: 99%

“…Different from suppressing the charge separation effect in InGaN-based devices, polarization doping has been applied to increase the hole concentration in AlGaN alloys by ionizing Mg acceptor in the polarization field 13 14 . Alternative acceptor-donor co-doping and non-equilibrium growth with Mg pulse doping and Mg δ-doping have also been developed to reduce the acceptor activation energy, and thus, increase the hole concentration and enhance the p-type conductivity of AlGaN alloys 15 16 17 18 19 20 . So far, most experiments were focused on the p-type conductions of GaN and low Al-content AlGaN alloys, but the bottlenecks of the p-type doping in high Al-content AlGaN still remain 20 21 22 .…”

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confidence: 99%

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Experimental evidences for reducing Mg activation energy in high Al-content AlGaN alloy by MgGa δ doping in (AlN)m/(GaN)n superlattice

Wang

et al. 2017

Sci Rep

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P-type doping in high Al-content AlGaN alloys is a main challenge for realizing AlGaN-based deep ultraviolet optoelectronics devices. According to the first-principles calculations, Mg activation energy may be reduced so that a high hole concentration can be obtained by introducing nanoscale (AlN)5/(GaN)1 superlattice (SL) in Al0.83Ga0.17N disorder alloy. In this work, experimental evidences were achieved by analyzing Mg doped high Al-content AlGaN alloys and Mg doped AlGaN SLs as well as MgGa δ doped AlGaN SLs. Mg acceptor activation energy was significantly reduced from 0.378 to 0.331 eV by using MgGa δ doping in SLs instead of traditional doping in alloys. This new process was confirmed to be able to realize high p-type doping in high Al-content AlGaN.

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confidence: 99%

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confidence: 99%

Experimental evidences for reducing Mg activation energy in high Al-content AlGaN alloy by MgGa δ doping in (AlN)m/(GaN)n superlattice

Wang

et al. 2017

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“…Great efforts have been devoted to improve p -type conduction in group-III nitrides 10 11 12 13 14 15 16 . Polarization doping has been proposed to increase the hole concentration in compositionally graded AlGaN alloys, in which Mg acceptor is ionized by the polarization field 10 11 12 .…”

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confidence: 99%

“…Alternative acceptor-donor co-doping has also been developed to reduce the acceptor activation energy 13 14 . The non-equilibrium growing with pulse doping has been proved to increase the hole concentration 15 . Furthermore, Mg δ-doping, a impurity-growth mode by closing Ga and Al flow and leaving N and Mg flow, enhances the p -type conductivity of AlGaN alloys 16 .…”

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Reducing Mg Acceptor Activation-Energy in Al0.83Ga0.17N Disorder Alloy Substituted by Nanoscale (AlN)5/(GaN)1 Superlattice Using MgGa δ-Doping: Mg Local-Structure Effect

Zhong

Shi

Zhang

et al. 2014

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Improving p-type doping efficiency in Al-rich AlGaN alloys is a worldwide problem for the realization of AlGaN-based deep ultraviolet optoelectronic devices. In order to solve this problem, we calculate Mg acceptor activation energy and investigate its relationship with Mg local structure in nanoscale (AlN)5/(GaN)1 superlattice (SL), a substitution for Al0.83Ga0.17N disorder alloy, using first-principles calculations. A universal picture to reduce acceptor activation energy in wide-gap semiconductors is given for the first time. By reducing the volume of the acceptor local structure slightly, its activation energy can be decreased remarkably. Our results show that Mg acceptor activation energy can be reduced significantly from 0.44 eV in Al0.83Ga0.17N disorder alloy to 0.26 eV, very close to the Mg acceptor activation energy in GaN, and a high hole concentration in the order of 1019 cm−3 can be obtained in (AlN)5/(GaN)1 SL by MgGa δ-doping owing to GaN-monolayer modulation. We thus open up a new way to reduce Mg acceptor activation energy and increase hole concentration in Al-rich AlGaN.

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“…10 Hence, realizing p-type Al-rich AlGaN has become a worldwide problem in the nitride community. Many methods have been proposed to improve p-type conduction in group-III nitrides, such as polarization doping in compositionally graded AlGaN alloys, [11][12][13] alternative acceptor-donor codoping, 14,15 non-equilibrium growing with pulse doping, 16 and Mg δ-doping. 17 However, to the best of our knowledge, only several experiments are focused on the p-type conduction of Al-rich AlGaN alloys.…”

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Improving p-type doping efficiency in Al0.83Ga0.17N alloy substituted by nanoscale (AlN)5/(GaN)1 superlattice with MgGa-ON δ-codoping: Role of O-atom in GaN monolayer

et al. 2015

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We calculate Mg-acceptor activation energy EA and investigate the influence of O-atom, occupied the Mg nearest-neighbor, on EA in nanoscale (AlN)5/(GaN)1 superlattice (SL), a substitution for Al0.83Ga0.17N disorder alloy, using first-principles calculations. We find that the N-atom bonded with Ga-atom is more easily substituted by O-atom and nMgGa-ON (n = 1-3) complexes are favorable and stable in the SL. The O-atom plays a dominant role in reducing EA. The shorter the Mg-O bond is, the smaller the EA is. The Mg-acceptor activation energy can be reduced significantly by nMgGa-ON δ-codoping. Our calculated EA for 2MgGa-ON is 0.21 eV, and can be further reduced to 0.13 eV for 3MgGa-ON, which results in a high hole concentration in the order of 1020 cm−3 at room temperature in (AlN)5/(GaN)1 SL. Our results prove that nMgGa-ON (n = 2,3) δ-codoping in AlN/GaN SL with ultrathin GaN-layer is an effective way to improve p-type doping efficiency in Al-rich AlGaN.

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Formation of AlGaN and GaN epitaxial layer with high p-carrier concentration by pulse supply of source gases

Abstract: A drastic increase in the p-type carrier concentration and decrease in the activation energy of an acceptor are achieved by using a method of pulse supply of the source gases for AlGaN and GaN. This method offers a new way of producing a low-resistance p-AlGaN and p-GaN epitaxial layer.

Cited by 14 publications

References 7 publications

Experimental evidences for reducing Mg activation energy in high Al-content AlGaN alloy by MgGa δ doping in (AlN)m/(GaN)n superlattice

Experimental evidences for reducing Mg activation energy in high Al-content AlGaN alloy by MgGa δ doping in (AlN)m/(GaN)n superlattice

Reducing Mg Acceptor Activation-Energy in Al0.83Ga0.17N Disorder Alloy Substituted by Nanoscale (AlN)5/(GaN)1 Superlattice Using MgGa δ-Doping: Mg Local-Structure Effect

Improving p-type doping efficiency in Al0.83Ga0.17N alloy substituted by nanoscale (AlN)5/(GaN)1 superlattice with MgGa-ON δ-codoping: Role of O-atom in GaN monolayer

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