1999
DOI: 10.1116/1.581616
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Formation of alkylsiloxane self-assembled monolayers on Si3N4

Abstract: Articles you may be interested inFabrication of quantum dots using multicoated self-assembled monolayer J. Vac. Sci. Technol. A 28, 730 (2010); 10.1116/1.3360923 Passivation of GaAs by octadecanethiol self-assembled monolayers deposited from liquid and vapor phasesThe structure of alkylsiloxane self-assembled monolayers formed on HF-treated Si 3 N 4 has been studied using x-ray photoelectron spectroscopy, high-resolution electron energy-loss spectroscopy, and contact angle analysis. It is shown that the monola… Show more

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Cited by 49 publications
(41 citation statements)
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“…As their original surface properties exhibit hydrophilicity (water contact angle is 46.7° (Thomas 1996), 30° (Sung et al 1999), and 40.8° (Tan et al 2005) for SiO 2 , Si 3 N 4 and BST, respectively), normally they have to work with a hydrophobic top-coating layer such as Teflon Ò AF 1600 for electrowetting actuation. The prime advantages of SiO 2 as a capacitive insulator are its high dielectric constant, high dielectric strength and availability as one of the predominant materials in the MEMS and microelectronics industries.…”
Section: Polymeric and Inorganic Dielectricsmentioning
confidence: 99%
“…As their original surface properties exhibit hydrophilicity (water contact angle is 46.7° (Thomas 1996), 30° (Sung et al 1999), and 40.8° (Tan et al 2005) for SiO 2 , Si 3 N 4 and BST, respectively), normally they have to work with a hydrophobic top-coating layer such as Teflon Ò AF 1600 for electrowetting actuation. The prime advantages of SiO 2 as a capacitive insulator are its high dielectric constant, high dielectric strength and availability as one of the predominant materials in the MEMS and microelectronics industries.…”
Section: Polymeric and Inorganic Dielectricsmentioning
confidence: 99%
“…However, the bus between the digits and the bonding pads remained covered and electrically isolated from the test environment or material under test. Si 3 N 4 is a superior insulator to SiO 2 , spin-on glass (SoG) or polyimide in high performance biosensor applications because of its robust physical properties and excellent water and ion barrier properties (Sung et al 1999). The Si 3 N 4 serves as an insulator and a chemical barrier to electrically/electrochemically isolate the buses to the fingers and effectively passivates the device except for the signal generating digits.…”
Section: Design and Fabrication Of Imesmentioning
confidence: 99%
“…Removing the oxide layer of silicon nitride tips with hydrofluoric acid helps in the formation of silane monolayers [135,136].…”
Section: Modificationmentioning
confidence: 99%