Formation of alternative surface oxide phases on GaAs by adsorption of O2 or H2O: A UPS, XPS, and SIMS study

Webb, C. J.; Lichtensteiger, M.

doi:10.1116/1.571808

Cited by 41 publications

(36 citation statements)

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“…As presented in the section of Introduction, the experimental results are different due to different GaAs surfaces and experimental conditions [6][7][8][9][10][11][12][13][14]. Chung et al [13] studied the reaction mechanism of the H 2 O molecule with the GaAs(1 0 0)-(4 Â 2) surface.…”

Section: Comparisons With the Experimental Resultsmentioning

confidence: 97%

“…The corresponding adsorption and decomposition mechanisms were elucidated experimentally and theoretically [4,5]. As to the interactions of H 2 O with the GaAs surfaces, different mechanisms were obtained with different GaAs surfaces and experimental conditions [6][7][8][9][10][11][12][13][14]. The dissociation of H 2 O on the GaAs surface was found due to the formation of the Ga-O bond [7,[11][12][13][14].…”

Section: Introductionmentioning

confidence: 99%

“…As to the interactions of H 2 O with the GaAs surfaces, different mechanisms were obtained with different GaAs surfaces and experimental conditions [6][7][8][9][10][11][12][13][14]. The dissociation of H 2 O on the GaAs surface was found due to the formation of the Ga-O bond [7,[11][12][13][14]. For example, Chung and coworkers [13] studied the adsorption, desorption, and decomposition mechanisms of H 2 O on the GaAs(0 0 1)-(4 Â 2) surface with the temperature-programmed desorption (TPD), high-resolution electron energy loss spectroscopy (HREELS), and Auger electron spectroscopy (AES).…”

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Adsorption and dissociation of H2O on the Ga-rich GaAs(001)-(4×2) surface: DFT and DFT-D computations with a Ga7As8H11 cluster model

Zhang

Liu

Shi³

et al. 2015

Computational and Theoretical Chemistry

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Section: Comparisons With the Experimental Resultsmentioning

confidence: 97%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Adsorption and dissociation of H2O on the Ga-rich GaAs(001)-(4×2) surface: DFT and DFT-D computations with a Ga7As8H11 cluster model

Zhang

Liu

Shi³

et al. 2015

Computational and Theoretical Chemistry

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“…14, 15 We attribute the component at a binding energy of 1118.2 eV to a Ga-S bonding state resulting from the sulfidization of the GaSb surface. The Sb 4d spectra were deconvoluted into the Ga-Sb bond in GaSb ͑31.7 eV͒, the Sb-O bond in Sb 2 O 3 ͑34.7 eV͒, and the Sb-Sb bond in elemental Sb ͑31.9 eV͒, with a spin-orbit splitting of 1.25 eV and a new peak at a binding energy of 33.2 eV is attributed to Sb-S species on the passivated surface.…”

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confidence: 99%

A comparative study of GaSb (100) surface passivation by aqueous and nonaqueous solutions

Liu

Kuech

Saulys

2003

Applied Physics Letters

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We report a nonaqueous passivation regime consisting of Na 2 S/benzene/15-crown-5/oxidant. The use of a nonpolar, aprotic organic medium required the addition of a specific chelating agent ͑15-crown-5͒ to solubilize sodium sulfide, and organic oxidizing agents ͑anthraquinone, benzophenone, etc.͒ to act as electron acceptors. The surface optical and chemical properties of GaSb surfaces after aqueous and nonaqueous sulfide treatments were compared. Nonaqueous passivation resulted in higher photoluminescence ͑PL͒ intensity, lower oxide content, and a less amount of elemental Sb than aqueous passivation. The PL intensity from passivated surfaces was correlated with the standard reduction potentials of electron acceptors. © 2003 American Institute of Physics. ͓DOI: 10.1063/1.1613994͔The surface properties of semiconductors are crucial determinants of device performance. Considerable efforts have been made to modify III-V semiconductor surfaces in order to improve electronic properties and device performance. The passivation of GaAs with aqueous solutions of sodium or ammonium sulfides has been extensively studied both theoretically and experimentally. [1][2][3][4] The reactions between chalcogenides and GaAs surface species change the surface electronic structures and remove the surface states from the band gap, thus unpinning the surface Fermi level and improving electrical and optical properties.GaSb is an important III-V compound semiconductor for high-speed and optoelectronic device applications, the performance of which is strongly dependent on the chemical and electronic properties of GaSb surfaces or interfaces. However, GaSb is highly chemically reactive, being easily oxidized by atmospheric oxygen with the formation of native surface oxides several nanometers thick.5 An additional consequence of surface oxidation is the formation of elemental antimony at the oxide-GaSb interface, which creates a conduction channel parallel to the interface that leads to high surface leakage current, thus limiting applications.6,7 Various surface passivation methods, including wet and dry chemical processes, [8][9][10][11] have been studied in efforts to improve GaSb surface characteristics. Unfortunately, most processing techniques are still water-based and lead to the growth of surface oxides and degrade the structural quality of the surface. Therefore, alternative, nonaqueous, solvents capable of sulfidization are of particular interest for GaSb surface processing.In this work, a specific benzene-based sodium sulfide passivation regime was developed to improve the passivation of GaSb surfaces. Chelating agents were employed to solubilize and activate sulfide anions, and organic oxidizing agents were added to the passivation solution to facilitate electron transfer. The optical and chemical characteristics, before and after chemical treatments, were studied by photoluminescence ͑PL͒ and x-ray photoemission spectroscopy ͑XPS͒. A comparison of the results of GaSb passivation in aqueous and nonaqueous sulfide solutions indicat...

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“…As a result, an aqueous processing leads to a high density of Ga-OH groups on the surface. 21 The use of anhydrous benzene as a passivation medium can limit or eliminate the growth of such surface oxide. 22 The increased PL intensity was consistently observed from the GaSb samples treated by S, Se, or Te in the nonaqueous medium.…”

Section: A Surface Electronic and Chemical Propertiesmentioning

confidence: 99%

Modifications of the electronic structure of GaSb surface by chalcogen atoms: S, Se, and Te

Liu

Gokhale

Mavrikakis

et al. 2004

Journal of Applied Physics

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Modifications to the electronic properties and chemical structures of the GaSb surface using the chalcogen atoms S, Se, and Te were investigated theoretically and experimentally. A self-consistent density-functional theory study indicates that an adsorption of a full monolayer coverage of chalcogen atoms on a Ga-terminated surface reduces the density of gap region states significantly. A greater photoluminescence enhancement was observed from GaSb samples treated by chalcogenide (Na 2 S, Na 2 Se, or Na 2 Te) in a nonaqueous than in an aqueous passivation medium. X-ray photoelectron spectroscopy reveals a Ga-rich surface after a nonaqueous passivation, with sulfidization providing a higher concentration of Ga͑Sb͒-chalcogen bonds than does a passivation with Na 2 Se or Na 2 Te. The uptake of chalcogen during the passivation is accompanied by the loss of surface antimony. The formation of Sb-X(X = S, Se, or Te) bonds competes with X displacing surface Sb, which dominates Se or Te incorporation in the GaSb surface lattice. The passivation kinetics was analyzed on basis of a single precursor-mediated coverage-dependent chemisorption proces.

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Formation of alternative surface oxide phases on GaAs by adsorption of O2 or H2O: A UPS, XPS, and SIMS study

Cited by 41 publications

References 0 publications

Adsorption and dissociation of H2O on the Ga-rich GaAs(001)-(4×2) surface: DFT and DFT-D computations with a Ga7As8H11 cluster model

Adsorption and dissociation of H2O on the Ga-rich GaAs(001)-(4×2) surface: DFT and DFT-D computations with a Ga7As8H11 cluster model

A comparative study of GaSb (100) surface passivation by aqueous and nonaqueous solutions

Modifications of the electronic structure of GaSb surface by chalcogen atoms: S, Se, and Te

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