The structural properties and local contact potential difference of Au on Si(111)-(7×7) surface were studied by self-made ultra-high vacuum non-contact Kelvin probe force microscope. Although scanning tunneling microscopy has been widely used to study metal adsorbed semiconductor surfaces on the atomic scale, the tunnel current measured by scanning tunneling microscopy is easy to lead to accidental switching of charge states in the measurement process, and it is only limited to the observation of metal and semiconductor surfaces. Kelvin probe force microscope allows us to directly measure the charges at different positions of various flat surfaces by local contact potential difference at the atomic scale, which has become a more convenient and accurate means of charge characterization. In this paper, the topography and local contact potential difference atomic scale of Au adsorbed Si(111)-(7×7) surface were measured by Kelvin probe force microscope at room temperature, and the corresponding adsorption model and first principle calculation were established. The differential charge density distribution of the stable adsorption position of Au/Si(111)-(7×7) was obtained, and the local contact potential difference relationship of the stable adsorption position of Au on Si surface was given, The mechanism of charge transfer between Au atom and Si(111)-(7×7) surface during adsorption was analyzed. The experimental results show that at room temperature, single Au atom will form triangular delocalized adsorption state in the half unit cells of Si(111)-(7×7). The delocalized adsorption state are due to the moving speed of a single Au atom in the HUC is faster than the scanning speed of Kelvin probe force microscope, and the local contact potential difference measurement of Au/Si(111)-(7×7) adsorbed surface can effectively identify Au and Si atoms. Obviously, this research is of great significance to promote the development of surface charge precision measurement, and is expected to provide some insights into the charge properties of metal adsorbed semiconductor surfaces.