Formation of Boron‐Based Films and Boron Nitride Layers by CVD of a Boron Ester

Sachdev, Hermann; Müller, Frank; Hüfner, S.

doi:10.1002/anie.201003012

Cited by 13 publications

(5 citation statements)

References 29 publications

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“…By changing the incident X-ray energies, and hence the inelastic mean free path of the photoelectrons (λ escape ), the information depth can be varied, giving a more surface sensitive spectrum (λ escape ≈ 10 Å) for hv = 400 eV and a more bulk sensitive (λ escape ≈ 13 Å) spectrum for hv = 640 eV. For the H 2 -preannealed foil, we assign the component at ∼188 eV to B-related species (dissolved B or borides) − and note that this component does not have a corresponding pair in the N1 s spectrum, as would be expected. Comparison of the relative intensities of this component shows that the B-related species are stronger in the more bulk sensitive spectra (Figure a inset), which is consistent with our XRD analysis, where we demonstrate that species present at higher concentrations in the catalyst bulk can segregate toward the surface during cooling, leading to the formation of additional phases (i.e., borides for H 2 preannealing and nitrides for NH 3 preannealing).…”

Section: Resultsmentioning

confidence: 99%

Controlling Catalyst Bulk Reservoir Effects for Monolayer Hexagonal Boron Nitride CVD

et al. 2016

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Highly controlled Fe-catalyzed growth of monolayer hexagonal boron nitride (h-BN) films is demonstrated by the dissolution of nitrogen into the catalyst bulk via NH3 exposure prior to the actual growth step. This “pre-filling” of the catalyst bulk reservoir allows us to control and limit the uptake of B and N species during borazine exposure and thereby to control the incubation time and h-BN growth kinetics while also limiting the contribution of uncontrolled precipitation-driven h-BN growth during cooling. Using in situ X-ray diffraction and in situ X-ray photoelectron spectroscopy combined with systematic growth calibrations, we develop an understanding and framework for engineering the catalyst bulk reservoir to optimize the growth process, which is also relevant to other 2D materials and their heterostructures.

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Section: Resultsmentioning

confidence: 99%

Controlling Catalyst Bulk Reservoir Effects for Monolayer Hexagonal Boron Nitride CVD

et al. 2016

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“…So, trimethylborate B(OM) 3 (with M ¼ CH 3 ) can be introduced as a boron source to prepare layered BN. 141,142 Aer nitration by NH 3 , highly ordered crystalline monolayer h-BN lms form. With a two-step boration-nitration process, there are two drawbacks in the preparation of hexagonal BN layers.…”

Section: Fabricationmentioning

confidence: 99%

Two-dimensional semiconductors: recent progress and future perspectives

2013

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Graphene with a sp 2 -honeycomb carbon lattice has drawn a large amount of attention due to its excellent properties and potential applications in many fields. Similar to the structure of graphene, two-dimensional semiconductors are its two-dimensional and isostructural counterparts based on the typical layerstructured semiconductors, such as boron nitride (h-BN) and transition metal dichalcogenides (e.g. MoS 2 and WS 2 ), whose layers are bound by weak van der Waals forces. Unlike the semi-metal features of graphene, the two-dimensional semiconductors are natural semiconductors with thicknesses on the atomic scale. When one of the dimensions is extremely reduced, the two-dimensional semiconductors exhibit some unique properties, such as a transition from indirect to direct semiconductor properties, and hence have great potential for applications in electronics, energy storage, sensors, catalysis and composites, which arise both from the dimension-reduced effect and from the modified electronic structure. In this feature article, recent developments in the synthesis, properties and applications of two-dimensional semiconductors are discussed. The reported virtues and novelties of two-dimensional semiconductors are highlighted and the current problems in their developing process are clarified, in addition to their challenges and future prospects.

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“…In analogy to graphene, the strength of the h-BN/metal interactions can be used to guide the choice of the catalyst [22], whereby too strong an interaction as e.g. shown for Co [23], Ni [24] or Rh [25,26] brings significant challenges for subsequent h-BN transfer. A further widely used guideline to the choice of the catalytic metal for monolayer h-BN Oxidising and carburising catalyst conditioning for the controlled growth and transfer of large crystal monolayer hexagonal boron nitride growth is its bulk solubility of the constituent elements, whereby high B and N solubilities are considered deleterious leading to reservoir and precipitation effects upon cooling that are difficult to control [27].…”

Section: Introductionmentioning

confidence: 99%

Oxidising and carburising catalyst conditioning for the controlled growth and transfer of large crystal monolayer hexagonal boron nitride

et al. 2020

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Hexagonal boron nitride (h-BN) is well-established as a requisite support, encapsulant and barrier for 2D material technologies, but also recently as an active material for applications ranging from hyperbolic metasurfaces to room temperature single-photon sources. Costeffective, scalable and high quality growth techniques for h-BN layers are critically required. We utilise widely-available iron foils for the catalytic chemical vapour deposition (CVD) of h-BN and report on the significant role of bulk dissolved species in h-BN CVD, and specifically, the balance between dissolved oxygen and carbon. A simple pre-growth conditioning step of the iron foils enables us to tailor an error-tolerant scalable CVD process to give exceptionally large h-BN monolayer domains. We also develop a facile method for the improved transfer of as-grown h-BN away from the iron surface by means of the controlled humidity oxidation and subsequent rapid etching of a thin interfacial iron oxide; thus, avoiding the impurities from the bulk of the foil. We demonstrate wafer-scale (2") production and utilise this h-BN as a protective layer for graphene towards integrated (opto-)electronic device fabrication.

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Formation of Boron‐Based Films and Boron Nitride Layers by CVD of a Boron Ester

Cited by 13 publications

References 29 publications

Controlling Catalyst Bulk Reservoir Effects for Monolayer Hexagonal Boron Nitride CVD

Controlling Catalyst Bulk Reservoir Effects for Monolayer Hexagonal Boron Nitride CVD

Two-dimensional semiconductors: recent progress and future perspectives

Oxidising and carburising catalyst conditioning for the controlled growth and transfer of large crystal monolayer hexagonal boron nitride

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