Formation of Boron‐doped region using spin‐on dopant: investigation on the impact of metallic impurities

Jourdan, J.; Veschetti, Y.; Dubois, Sébastien; Desrues, T.; Monna, R.

doi:10.1002/pip.818

Cited by 19 publications

(12 citation statements)

References 14 publications

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“…2, the spin-on dopant (SOD) boron diffusion induces a strong drop in the effective lifetime for all samples. A previous work, based on the study of the influence of the boron SOD technique on the electrical properties of single-crystalline wafers, showed that this effect was mainly related to the introduction of iron initially present in the deposited film [10]. This impact of this homogenous contamination on mc-Si wafers is presented in Fig.…”

Section: Effects Of the Boron Diffusionmentioning

confidence: 95%

Electrical properties of n-type multicrystalline silicon for photovoltaic application—Impact of high temperature boron diffusion

Jourdan

Dubois

Cabal

et al. 2009

Materials Science and Engineering: B

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Section: Effects Of the Boron Diffusionmentioning

confidence: 95%

Electrical properties of n-type multicrystalline silicon for photovoltaic application—Impact of high temperature boron diffusion

Jourdan

Dubois

Cabal

et al. 2009

Materials Science and Engineering: B

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“…A estrutura da célula solar foi reotimizada e o processo foi projetado para reduzir a resistência série e as perdas por recombinação nos dispositivos [7]. Esta empresa também está desenvolvendo células solares bifaciais [8] em substratos tipo n. Um resultado importante foi obtido por MIHAILETCHI et al [3] em células solares de 140 cm 2 de área processadas em lâminas finas de Si-FZ tipo n, com difusão de boro para formar o emissor frontal.…”

Section: Introductionunclassified

“…A obtenção desta região dopada com alta qualidade e baixo custo ainda é um problema em discussão e a aplicação de dopantes por spin-on tem sido estudada para solucioná-lo [7,13,14,15].…”

Section: Introductionunclassified

Desenvolvimento de células solares em silício tipo n com emissor formado por Boro

et al. 2011

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RESUMO O Sol é fonte de energia renovável e o seu uso para produzir energia elétrica é uma das alternativas promissoras para enfrentar os desafios energéticos e ambientais do novo milênio. O silício é o segundo elemento mais abundante da Terra. Este material semicondutor é largamente usado na indústria de células solares e dispositivos de microeletrônica e permite a fabricação de dispositivos de alta durabilidade. O silício cristalino tipo n vem despertando o interesse mundial por apresentar menor degradação e maior tempo de vida dos portadores minoritários quando comparado com silício tipo p. O objetivo deste trabalho está centrado no desenvolvimento de um processo de fabricação industrial de células solares p+nn+, pseudoquadradas de 80 mm x 80 mm, em silício crescido por fusão zonal flutuante (Si-FZ) tipo n, com metalização por serigrafia. A região p+ foi produzida a partir de dopante com boro depositado por spin-on e difusão a alta temperatura em forno convencional com tubo de quartzo. A dopagem com boro foi otimizada considerando as características elétricas das células solares. O método consistiu em variar a temperatura de difusão de 900 ºC a 1020 ºC e tempo de difusão do processo de 10 min a 40 min. O processo de passivação de superfície foi avaliado utilizando SiO2 o que demonstrou não ser eficaz para o tipo de célula solar deste trabalho. Os melhores dispositivos foram fabricados com difusão de boro a 1000 ºC por 30 min, sem passivação de superfície, atingindo-se a eficiência de 14,6 %. Palavras-chave: Células solares, Si-FZ tipo n, emissor com boro. ABSTRACT The Sun is a renewable energy source and its use to produce electric energy is one of the promising alternatives to address energetic and environmental challenges of the new millennium. Silicon is the second most abundant element in Earth. This semiconductor material is widely used in the manufacturing of solar cells and microelectronic devices and it allows the fabrication of high durability devices. The n-type Si is attracting worldwide interest because of its reduced degradation and higher minority carrier lifetime when compared to p-silicon. This work focuses on the development of a process to fabricate industrial p+nn+ solar cells, pseudo-square of 80 mm x 80 mm, by using n-type float zone silicon (FZ-Si), with metal grid deposited by screen-printing. The p+ region was formed by using boron spin-on dopant and diffusion in conventional quartz-tube furnaces at high temperature. Boron doping was optimized taking into account the solar cell electric characteristics. Temperature of boron diffusion was varied from 900 ºC to 1020 ºC and diffusion time from 10 min to 40 min. Surface passivation was implemented by using a SiO2 layer and it was not effective to reduce the surface recombination. Best devices were fabricated with boron diffusion at 1000 °C by 30 min, achieving the efficiency of 14.6 %.

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“…The spin-on dopant technique offers single-sided diffusion, but it can suffer from contamination by metallic impurities initially present in the spin-on dopant film [11]. The ink-jet printing technique, on the other hand, has the added advantage of creating selective emitters.…”

mentioning

confidence: 99%

“…glass formed by gaseous BBr 3 [5]- [9] and BCl 3 [10] precursors, diffusion from spin-on boron source [11], inkjet-printed boron source [12], [13], and atmospheric pressure chemicalvapor-deposited boron silicate glass (BSG) [14], as well as conventional boron ion implantation [15], [16] and plasma ion implantation [17] followed by thermal diffusion. The various doping methods have their unique advantages and disadvantages.…”

mentioning

confidence: 99%

Boron-Doped Silicon Surfaces From B$_{\bf 2}$H $_{\bf 6}$ Passivated by ALD Al$_{\bf 2}$O$_{\bf 3}$ for Solar Cells

Mok

Loo

Vlooswijk

et al. 2015

IEEE J. Photovoltaics

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A p + -doping method for silicon solar cells is presented whereby boron atoms from a pure boron (PureB) layer deposited by chemical vapor deposition using B 2 H 6 as precursor were thermally diffused into silicon. The applicability of this doping process for the doped surfaces of silicon solar cells was evaluated in terms of surface morphology after thermal diffusion, the boron dopant profiles, and sheet resistances, as well as the recombination parameter J 0p + , when the doped layers were passivated by Al 2 O 3 films prepared by atomic layer deposition. Adequate surface passivation could be achieved with a surface recombination contribution to J 0p + of <20 fA/cm 2 for most samples. However, when a boron-rich layer (BRL) was present at the Si surface, a much higher recombination current density was observed, proving that a BRL was detrimental to the high-quality surface passivation of boron-diffused surfaces. It was found that sufficient O 2 in the furnace during the thermal diffusion process could eliminate any potential residual BRL, while excessive O 2 concentration results in boron depletion and a higher sheet resistance. Therefore, in addition to optimizing the initial PureB layer thickness and thermal budget to control the dopant profiles, the O 2 concentration during the diffusion must also be well controlled.

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Formation of Boron‐doped region using spin‐on dopant: investigation on the impact of metallic impurities

Cited by 19 publications

References 14 publications

Electrical properties of n-type multicrystalline silicon for photovoltaic application—Impact of high temperature boron diffusion

Electrical properties of n-type multicrystalline silicon for photovoltaic application—Impact of high temperature boron diffusion

Desenvolvimento de células solares em silício tipo n com emissor formado por Boro

Boron-Doped Silicon Surfaces From B$_{\bf 2}$H $_{\bf 6}$ Passivated by ALD Al$_{\bf 2}$O$_{\bf 3}$ for Solar Cells

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