Formation of CdSe nanocrystals in Cd-doped thin arsenic selenide films under laser irradiation

Azhniuk, Yu. M.; Solonenko, Dmytro; Sheremet, Evgeniya; Loya, Vasyl Y.; Grytsyshche, Iaroslav; Schulze, Steffen; Hietschold, Michael; Gomonnai, A. V.; Zahn, Dietrich R. T.

doi:10.1016/j.tsf.2017.06.023

Cited by 14 publications

(22 citation statements)

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“…The samples exhibit rather uniform patterns; the surface roughness values R a calculated from the AFM images were in both cases about 0.8 nm. Note that in our recent studies of Cd‐doped As 2 Se 3 [ 18 ] and As 2 S 3 ,[ 19 ] films prepared by a similar technique, we observed surface roughness of the same scale (below 1 nm) practically independent of the cadmium content in the film. In addition, no significant differences in the surface roughness were observed for films prepared on silicon and silicate glass substrates.…”

Section: Resultssupporting

confidence: 71%

“…In amorphous Cd‐ or Zn‐doped As 2 Se 3 or As 2 S 3 films, this can result in fast aggregation of the dopant (Cd or Zn) and chalcogen (S or Se) atoms and formation of binary (CdSe, CdS, ZnSe, or ZnS) II–VI nanocrystals (NCs) directly during the Raman measurement. [ 18–21 ] In the present paper, we investigate Cd‐doped As–Se–S films using X‐ray diffraction (XRD), atomic force microscopy (AFM), X‐ray photoelectron spectroscopy (XPS), photoluminescence (PL), and micro‐Raman spectroscopy. One could expect that in the As–Se–S:Cd films, illumination by laser light would lead to the formation of ternary CdS 1– x Se x nanocrystals (NCs).…”

Section: Introductionmentioning

confidence: 99%

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Ternary CdS_1–xSe_xnanocrystals formed in Cd‐doped As–Se–S films due to photoenhanced diffusion during micro‐Raman measurement

Azhniuk

Dzhagan

Solonenko

et al. 2021

J Raman Spectroscopy

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Micro‐Raman spectra of amorphous As–Se–S:Cd films prepared by thermal evaporation on silicon and silicate glass substrates measured at different laser power densities show the formation of CdS1–xSex nanocrystals in the As–Se–S:Cd film under laser beam illumination due to a photoinduced material transfer and photoenhanced diffusion in the laser spot area. The material transfer and the photoenhanced diffusion are caused by a non‐thermal interaction of light with the amorphous As–Se–S:Cd films. The chemical composition of the CdS1–xSex nanocrystals can be determined from the difference of the CdSe‐like and CdS‐like LO phonon wavenumbers in the Raman spectra. The photoluminescence peak energies are in agreement with the CdS1–xSex composition, with the average nanocrystal size being somewhat above the exciton Bohr radius.

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Section: Resultssupporting

confidence: 71%

Section: Introductionmentioning

confidence: 99%

Ternary CdS_1–xSe_xnanocrystals formed in Cd‐doped As–Se–S films due to photoenhanced diffusion during micro‐Raman measurement

Azhniuk

Dzhagan

Solonenko

et al. 2021

J Raman Spectroscopy

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“…To our knowledge, this is the first observation of the formation of CdS nanocrystals in an amorphous As 2 S 3 matrix. Recently a similar effect was observed in the Raman spectra of As 2 Se 3 :Cd films where the formation of CdSe crystallites under the laser irradiation was reported . Several studies in recent years were devoted to Ag 2 S nanocrystals and PbS/CdS core‐shell quantum dots prepared in amorphous As 2 S 3 by colloidal techniques.…”

Section: Discussionsupporting

confidence: 67%

“…The latter consists in a drastic change of As 2 S 3 viscosity induced by laser irradiation . The viscosity decrease results in a mass transfer from the laser spot and the formation of a pit on the film surface with a decreased density of the material. Illumination can facilitate photolytic reactions of 2(As 2 S 3 ) n → n As 4 S 4 + n S 2 type .…”

Section: Resultsmentioning

confidence: 99%

“…However, in recent years several studies were published regarding the formation of sulfide nanocrystals in amorphous As 2 S 3 by colloidal techniques, namely PbS/CdS core‐shell quantum dots and Ag 2 S nanocrystals . Besides, semiconductor nanocrystals formed in related amorphous chalcogenides were reported in another recent studies: CdSe in As 2 Se 3 :Cd films, Ga 2 Se 3 in As 30 Se 50 Te 20 glass, and PbS as well as CdSe/ZnS core‐shell structures in amorphous Ge–Sb–S …”

Section: Introductionmentioning

confidence: 99%

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Laser‐Induced Formation of CdS Crystallites in Cd‐Doped Amorphous Arsenic Sulfide Thin Films

Azhniuk

Solonenko

Dzhagan

et al. 2018

Physica Status Solidi (b)

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As 2 S 3 :Cd films with nominal Cd content x up to 4 at.% were prepared by thermal evaporation. Their amorphous structure is confirmed by Raman spectroscopy. The film surface roughness estimated from atomic force microscopy does not exceed 1 nm. Energy-dispersive X-ray spectroscopy and X-ray photoelectron spectroscopy show a strong decrease of Cd content with the film depth. Peaks of CdS longitudinal optical phonon and its overtones emerging in the Raman spectra of films with x ! 2 at.% Cd are the evidence for the laser irradiation-induced formation of CdS crystallites in the As 2 S 3 :Cd films. The downward shift of the CdS Raman peak frequencies is mainly explained by tensile strain undergone by the CdS crystallites in the films caused by material transfer from the laser spot due to the photoplastic effect.

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Photoinduced transformations in (As_1–xBi_x)₂S₃ glass observed by Raman spectroscopy

Azhniuk,

Lopushansky,

Hasynets

et al. 2024

J Raman Spectroscopy

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Raman spectra of (As1–xBix)2S3 glass samples with x ≤ 0.2 measured at the excitation with above‐bandgap (532 nm) laser light at a relatively low power density (Pexc = 4 kW/cm2) clearly confirm the amorphous character, thereby markedly extending the known compositional interval of existence of the (As1–xBix)2S3 glass previously known (x ≤ 0.06). Spectra measured at an increased Pexc (40 kW/cm2) reveal a photostructural transformation in the illuminated area of the glass leading to an additional contribution of Bi–S bonds as well as to an increasing number of cage‐type As4S4 units with homopolar As–As bonds. A number of new features in a broad range up to about 1,000 cm−1, which emerge in the Raman spectra of the (As1–xBix)2S3 glasses with high (x ≥ 0.14) Bi content and increase in intensity with the exposure time, are related to a photochemical transformation, namely, oxidation of arsenic and sulphur on the (As1–xBix)2S3 glass surface with formation of units containing arsenate AsO43− and sulphate SO42− ions. These processes are irreversible and occur only in the presence of a sufficient amount of bismuth.

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Formation of CdSe nanocrystals in Cd-doped thin arsenic selenide films under laser irradiation

Cited by 14 publications

References 55 publications

Ternary CdS_1–xSe_xnanocrystals formed in Cd‐doped As–Se–S films due to photoenhanced diffusion during micro‐Raman measurement

Ternary CdS_1–xSe_xnanocrystals formed in Cd‐doped As–Se–S films due to photoenhanced diffusion during micro‐Raman measurement

Laser‐Induced Formation of CdS Crystallites in Cd‐Doped Amorphous Arsenic Sulfide Thin Films

Photoinduced transformations in (As_1–xBi_x)₂S₃ glass observed by Raman spectroscopy

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Formation of CdSe nanocrystals in Cd-doped thin arsenic selenide films under laser irradiation

Cited by 14 publications

References 55 publications

Ternary CdS1–xSexnanocrystals formed in Cd‐doped As–Se–S films due to photoenhanced diffusion during micro‐Raman measurement

Ternary CdS1–xSexnanocrystals formed in Cd‐doped As–Se–S films due to photoenhanced diffusion during micro‐Raman measurement

Laser‐Induced Formation of CdS Crystallites in Cd‐Doped Amorphous Arsenic Sulfide Thin Films

Photoinduced transformations in (As1–xBix)2S3 glass observed by Raman spectroscopy

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Ternary CdS_1–xSe_xnanocrystals formed in Cd‐doped As–Se–S films due to photoenhanced diffusion during micro‐Raman measurement

Ternary CdS_1–xSe_xnanocrystals formed in Cd‐doped As–Se–S films due to photoenhanced diffusion during micro‐Raman measurement

Photoinduced transformations in (As_1–xBi_x)₂S₃ glass observed by Raman spectroscopy