Formation of chalcogen containing plasmas and their use in the synthesis of photovoltaic absorbers

Kosaraju, Sreenivas; Repins, Ingrid; Wolden, Colin A.

doi:10.1116/1.1924471

Cited by 10 publications

(7 citation statements)

References 20 publications

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“…For example, the chemical potential of atomic S is ∼3 eV greater than that for H 2 S. Such plasmas have previously been applied for converting In, Cu−In, and Cu−In− Ga to their respective chalcopyrite phases. 9 We are aware of one previous report of subliming elemental S into an Ar plasma for conversion of iron films into pyrite, but the materials chemistry was not fully described. 10 One drawback of using elemental Fe as a precursor is that the transformation proceeds through intermediate Fe 1−x S phases.…”

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confidence: 99%

“…A rf power of 80 W was applied, which was previously shown to be sufficient to dissociate nearly all the H 2 S feed. 9 Further details on the exposure procedure are provided in the Supporting Information.…”

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confidence: 99%

“…In a plasma, high-energy electrons dissociate the feed gas into atoms, excited metastables (S*), and ions (S + , S – ), enabling high reactivity. For example, the chemical potential of atomic S is ∼3 eV greater than that for H 2 S. Such plasmas have previously been applied for converting In, Cu–In, and Cu–In–Ga to their respective chalcopyrite phases …”

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Synthesis of Stoichiometric FeS₂ through Plasma-Assisted Sulfurization of Fe₂O₃ Nanorods

2012

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Pyrite (FeS(2)) thin films were synthesized using a H(2)S plasma to sulfurize hematite (Fe(2)O(3)) nanorods deposited by chemical bath deposition. The high S activity within the plasma enabled a direct solid-state transformation between the two materials, bypassing S-deficient contaminant phases (Fe(1-x)S). The application of plasma dramatically enhanced both the rate of conversion and the quality of the resulting material; stoichiometric FeS(2) was obtained at a moderate temperature of 400 °C using a chalcogen partial pressure <6 × 10(-5) atm. As the S:Fe atomic ratio increased from 0 to 2.0, the apparent optical band gap dropped from 2.2 (hematite) to ~1 eV (pyrite), with completely converted layers exhibiting absorption coefficients >10(5) cm(-1) in the visible range. Room-temperature conductivity of FeS(2) films was on the order of 10(-4) S cm(-1) and approximately doubled under calibrated solar illumination.

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Synthesis of Stoichiometric FeS₂ through Plasma-Assisted Sulfurization of Fe₂O₃ Nanorods

2012

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“…The cracked Se atoms became Se radicals, which are more active than the Se molecules. 28,31,32 Therefore, Se radicals can accelerate the chemical reaction for the formation of MoSe 2 at a relatively low selenization temperature, and the selenization reaction becomes more complete as the plasma power increases. Consequently, the MoSe 2 HNRAs can be formed on the substrate under an ICP power of 350 W with a reaction time of 20 min and a reaction temperature of 300 °C.…”

Section: Resultsmentioning

confidence: 97%

Three-Dimensional Molybdenum Diselenide Helical Nanorod Arrays for High-Performance Aluminum-Ion Batteries

Wang

et al. 2020

ACS Nano

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The rechargeable aluminum-ion battery (AIB) is a promising candidate for next-generation high-performance batteries, but its cathode materials require more development to improve their capacity and cycling life. We have demonstrated the growth of MoSe 2 three-dimensional helical nanorod arrays on a polyimide substrate by the deposition of Mo helical nanorod arrays followed by a low-temperature plasma-assisted selenization process to form novel cathodes for AIBs. The binder-free 3D MoSe 2 -based AIB shows a high specific capacity of 753 mAh g −1 at a current density of 0.3 A g −1 and can maintain a high specific capacity of 138 mAh g −1 at a current density of 5 A g −1 with 10 000 cycles. Ex situ Raman, XPS, and TEM characterization results of the electrodes under different states confirm the reversible alloying conversion and intercalation hybrid mechanism during the discharge and charge cycles. All possible chemical reactions were proposed by the electrochemical curves and characterization. Further exploratory works on interdigital flexible AIBs and stretchable AIBs were demonstrated, exhibiting a steady output capacity under different bending and stretching states. This method provides a controllable strategy for selenide nanostructure-based AIBs for use in future applications of energy-storage devices in flexible and wearable electronics.

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“…In the plasma, molecular H 2 S are dissociated into atoms, excited metastables (S*), and ions (S + , S − ) by high‐energy electron bombardment, and these dissociated species are highly energetic and reactive. Therefore the H 2 S plasma has been previously employed to effectively sulfurize metals and oxides into metal sulfides, although the detailed sulfurization mechanism is still unclear and presumably complicated. The introduction of the H 2 S plasma in each ALD cycle (Figure b) can be regarded, equivalently, as an additional in situ sulfurization step after the normal molecular H 2 S dose.…”

Section: Atomic Layer Deposition Of Metal Pyritesmentioning

confidence: 99%

Synthesis of Thin‐Film Metal Pyrites by an Atomic Layer Deposition Approach

Wang

Guo

Xiong

et al. 2018

Chemistry A European J

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Late 3d transition metal disulfides (MS , M=Fe, Co, Ni, Cu, Zn) can crystallize in an interesting cubic-pyrite structure, in which all the metal cations are in a low-spin electronic configuration with progressive increase of the e electrons for M=Fe-Zn. These metal pyrite compounds exhibit very diverse and intriguing electrical and magnetic properties, which have stimulated considerable attention for various applications, especially in cutting-edge energy conversion and storage technologies. The synthesis of the metal pyrites is certainly very important, because highly controllable, reproducible, and reliable synthesis methods are virtually essential for both fundamental materials research and practical engineering. In this Concept, a new approach of (plasma-assisted) atomic layer deposition (ALD) to synthesize the thin-film metal pyrites (FeS , CoS , NiS ) is introduced. The ALD synthesis approach allows for atomic-precision control over film composition and thickness, excellent film uniformity and conformality, and superior process reproducibility, and therefore it is of high promise for uniformly conformal metal pyrite thin-film coatings on complex 3D structures in general. Details and implications of this ALD approach are discussed in this Concept, mainly from a conceptual perspective, and it is envisioned that, with this new ALD synthesis approach, a significant amount of new studies will be enabled on both the fundamentals, and novel applications of the metal pyrite materials.

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Formation of chalcogen containing plasmas and their use in the synthesis of photovoltaic absorbers

Cited by 10 publications

References 20 publications

Synthesis of Stoichiometric FeS₂ through Plasma-Assisted Sulfurization of Fe₂O₃ Nanorods

Synthesis of Stoichiometric FeS₂ through Plasma-Assisted Sulfurization of Fe₂O₃ Nanorods

Three-Dimensional Molybdenum Diselenide Helical Nanorod Arrays for High-Performance Aluminum-Ion Batteries

Synthesis of Thin‐Film Metal Pyrites by an Atomic Layer Deposition Approach

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Formation of chalcogen containing plasmas and their use in the synthesis of photovoltaic absorbers

Cited by 10 publications

References 20 publications

Synthesis of Stoichiometric FeS2 through Plasma-Assisted Sulfurization of Fe2O3 Nanorods

Synthesis of Stoichiometric FeS2 through Plasma-Assisted Sulfurization of Fe2O3 Nanorods

Three-Dimensional Molybdenum Diselenide Helical Nanorod Arrays for High-Performance Aluminum-Ion Batteries

Synthesis of Thin‐Film Metal Pyrites by an Atomic Layer Deposition Approach

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Synthesis of Stoichiometric FeS₂ through Plasma-Assisted Sulfurization of Fe₂O₃ Nanorods

Synthesis of Stoichiometric FeS₂ through Plasma-Assisted Sulfurization of Fe₂O₃ Nanorods