Formation of CoSi2 by ion beam mixing and rapid thermal annealing

Niewöhner, Ludwig; Depta, D.

doi:10.1016/0168-583x(91)95271-e

Cited by 10 publications

(5 citation statements)

References 6 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Shorting of the test structures by the p-type silicon was prevented by not removing the oxide layer grown by hydrogen peroxide immersion. The resistivities of the CoSi 2 lines were within reported values and are in line with bulk film CoSi 2 properties [3,4,8,20]. The aluminum contact pads were 80 µm in width and 150 µm tall.…”

Section: Nm Beam Widthmentioning

confidence: 65%

“…The process relies on the effects of ion-beam mixing and radiation induced diffusion, which together are instrumental in activating the silicidation process across an interfacial oxide boundary. This oxide boundary, or impurity layer, as described by Wielunski [10] and subsequently others [3,5,8], impedes the silicide reaction of metal with the underlying silicon. Exposing such a layered structure to an ion fluence nullifies the effect of the oxide and silicidation occurs.…”

Section: Introductionmentioning

confidence: 99%

“…The literature is abundant with many novel methods for refining the manufacturing processes of silicide structures and improving their performance. For some time, the effects of ion-beam mixing on the growth of silicides have been explored [1][2][3][4][5][6][7][8][9][10]. A considerable amount of this work has focused on the characterization of the role of implantation on the formation of silicide phases in conjunction with subsequent or in situ heating.…”

Section: Introductionmentioning

confidence: 99%

“…Heating ramp rates were approximately 100 o C/s for low temperatures and approaching 150 o C/s for temperatures above 700 o C. The initial RTA step was 500 o C for 40 s, followed by a second step of 750 o C for 30 s. All RTA processing was performed under nitrogen ambient. Between anneals, non-reacted metal was removed by a 30 s selective etch in a HNO 3 The process steps describe the procedure after the openings in the oxide were created. 1; growth of the ~2 nm SiO2 layer in hydrogen peroxide, 2; evaporation of cobalt and silicon, 3; focused-ion-beam implantation, 4; low temperature RTA anneal at 500 o C, 5; removal of unreacted metal, 6; high temperature RTA anneal at 750 o C, 7; removal of remaining oxides.…”

Section: Introductionmentioning

confidence: 99%

See 3 more Smart Citations

Nanometer-scale silicide structures formed by focused ion-beam implantation

Alford

Mitan

Mayer

2002

Ion Implantation Technology. 2002. Proceedings of the 14th International Conference On

View full text Add to dashboard Cite

We have demonstrated a new technique for direct patterning and formation of cobalt silicide structures using focused ion beam implantation. This mask-free-fabrication technique takes advantage of the influence on the kinetics of ionbeam mixing and properties of thin barrier oxides during silicide line formation. Silicide structures with dimensions of the order of 170 nm were produced on (100) silicon substrates. The process involves the ion implantation of 200 keV As ++ through a thin cobalt film on SiO 2 /Si structure. A selective reaction barrier at the Si/Co interface comprising of a thin (~2 nm) oxide (SiO 2 ), prevents unwanted reactions with silicon. Ion-beam mixing was instrumental in fracturing of the oxide layer; thereby, allowing the migration of metal atoms across the Si/Co boundary for the silicidation reaction to proceed during subsequent rapid thermal anneal treatments. Diffusion controlled reactions advanced rapidly in the implanted areas, requiring a two-step anneal sequence to inhibit reaction elsewhere. A threshold dose of 3 × 10 15 cm -2 was required for process initiation. Four-terminal resistance test structures were formed for electrical measurements. Resistivity obtained ranged on the order of 12 to 23 µΩ-cm. Application of this method can facilitate a wide variety of silicide structures.

show abstract

Section: Nm Beam Widthmentioning

confidence: 65%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Nanometer-scale silicide structures formed by focused ion-beam implantation

Alford

Mitan

Mayer

2002

Ion Implantation Technology. 2002. Proceedings of the 14th International Conference On

View full text Add to dashboard Cite

show abstract

“…This oxide boundary ͑or impurity layer͒, described by Wielunski 10 and subsequently others, 3,5,8 prevents the reaction of unexposed metal areas with the underlying silicon, thus allowing the realization of direct write CoSi 2 structures. The process relies on the effects of ion-beam mixing and radiation-induced diffusion, which together are instrumental in activating the silicidation process across an interfacial oxide boundary.…”

Section: Introductionmentioning

confidence: 98%

Direct patterning of nanometer-scale silicide structures by focused ion-beam implantation through a thin barrier layer

Mitan

Pivin

Alford

et al. 2001

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

View full text Add to dashboard Cite

Buried single CdTe/CdMnTe quantum dots realized by focused ion beam lithography Appl. Phys. Lett. 75, 956 (1999); 10.1063/1.124565Focused ion-beam structuring of Si and Si/CoSi 2 heterostructures using adsorbed hydrogen as a resistRecently several new approaches have been proposed to manufacture silicide structures using mask-less techniques. We have developed a new technique for direct patterning and formation of cobalt silicide structures using focused ion-beam ͑FIB͒ implantation. Utilizing the effects of ion-beam mixing and properties of thin barrier oxides, silicide lines with dimensions down to 170 nm were produced on ͑100͒ silicon substrates using the FIB. The process involves the ion implantation of 200 keV As ϩϩ through a cobalt thin film. A thin ͑ϳ2 nm͒ oxide ͑SiO x ͒ at the Si/Co interface acts as a selective reaction barrier. Ion-beam mixing was instrumental in fracturing of the oxide layer, thereby allowing the silicidation reaction to proceed across the boundary during subsequent rapid thermal anneal treatments. Diffusion controlled reactions advanced rapidly in the implanted areas, while it is inhibited elsewhere. A threshold dose of 3ϫ10 15 cm Ϫ2 was required for process initiation. Four-terminal resistance test structures were formed for electrical measurements. Reported resistivity was in the range of 12 to 23Ϯ1 ⍀ cm.

show abstract

Synthesis of zirconium silicide in Zr thin film on Si and study of its surface morphology

Sisodia

Dhole

2013

J Mater Sci: Mater Electron

View full text Add to dashboard Cite

Formation of CoSi2 by ion beam mixing and rapid thermal annealing

Cited by 10 publications

References 6 publications

Nanometer-scale silicide structures formed by focused ion-beam implantation

Nanometer-scale silicide structures formed by focused ion-beam implantation

Direct patterning of nanometer-scale silicide structures by focused ion-beam implantation through a thin barrier layer

Synthesis of zirconium silicide in Zr thin film on Si and study of its surface morphology

Contact Info

Product

Resources

About