Formation of CuInSe2 and Cu(In,Ga)Se2 films by electrodeposition and vacuum annealing treatment

Zhang, L; Jiang, Fangdan; Feng, Jing

doi:10.1016/j.solmat.2003.06.014

Cited by 52 publications

(24 citation statements)

References 13 publications

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“…These additives form complexes with the metal ions in the solution such as Cu, thereby resulting in controlled deposition rates and hence the morphology [55,56]. Good quality CIGS thin films were also prepared from sulfate-citrate and chloride-citrate solutions [53,57,58] and control of the optical band gap by increasing the Ga content in the films was demonstrated [59].…”

Section: Electrodeposition Of Ternary/quaternary Chalcopyritesmentioning

confidence: 99%

Pulsed Electrochemical Deposition of CuInSe2 and Cu(In,Ga)Se2 Semiconductor Thin Films

Mandati¹,

Sarada²,

Dey³

et al. 2018

Semiconductors - Growth and Characterization

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CuInSe 2 (CIS) and Cu(In,Ga)Se 2 (CIGS) semiconductors are the most studied absorber materials for thin films solar cells due to their direct bandgap and large absorption coefficient. The highly efficient CIGS devices are often fabricated using expensive vacuum based technologies; however, recently electrodeposition has been demonstrated to produce CIGS devices with high efficiencies and it is easily amenable for large area films of high quality with effective material use and high deposition rate. In this context, this chapter discusses the recent developments in CIS and CIGS technologies using electrodeposition. In addition, the fundamental features of electrodeposition such as direct current, pulse and pulse-reverse plating and their application in the fabrication of CIS and CIGS films are discussed. In conclusion, the chapter summarizes the utilization of pulse electrodeposition for fabrication of CIS and CIGS films while making a recommendation for exploring the group's unique pulse electroplating method.

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Section: Electrodeposition Of Ternary/quaternary Chalcopyritesmentioning

confidence: 99%

Pulsed Electrochemical Deposition of CuInSe2 and Cu(In,Ga)Se2 Semiconductor Thin Films

Mandati¹,

Sarada²,

Dey³

et al. 2018

Semiconductors - Growth and Characterization

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show abstract

“…There is thus great interest in developing low cost nonvacuum-based techniques such as electrodeposition [5]. Several studies on electrodeposition of CIGS thin film have been reported [6][7][8], and these studies have mainly focused on the potentiostatic electrodeposition technique using direct current (DC) mode. There are very few research that attempts to achieve pulse electrochemical growth of CIGS films [9] but fails to incorporate gallium into the films during electrodeposition, even if ternary CuInSe 2 thin film prepared by pulse electrodeposition have been reported [10][11][12].…”

Section: Introductionmentioning

confidence: 99%

Preparation of Cu(In,Ga)Se2 thin films by pulse electrodeposition

Liu

Huang

Lai

et al. 2011

Journal of Alloys and Compounds

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“…In the literature there are numerous reports about the film growth by electrodeposition technique using a three electrodes system (cathode, electrode, reference electrode) [9][10][11][12][13]. The reference electrode has always been used to measure the cathode voltage with respect to it.…”

Section: Introductionmentioning

confidence: 99%

Annealing time effect on the properties of CuInSe2 grown by electrodeposition using two electrodes system

Bouraiou¹,

Aida²,

Mosbah³

et al. 2009

Braz. J. Phys.

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In this paper, we report the effect of annealing time on the properties of copper indium diselenide CuInSe 2 films. The CuInSe 2 thin films have been grown at room temperature by electrochemical deposition technique using two electrodes system. The as deposited films were annealed under argon atmosphere at 300 o C during 15, 30, 45 and 60 min. The structural and morphological properties of the resulting films were characterized respectively by means of x-ray diffraction (XRD) and scanning electron microscopy (SEM). The optical band gap was estimated from transmittance measurements. We have found, that after annealing, all films present CuInSe 2 in its chalcopyrite structure and with preferred orientation along <112> direction. The film annealed during 45 min exhibits better crystallinity and excellent optical properties. The SEM pictures show that the elaborated films have a uniform surface morphology with a homogeneity distribution of crystallites, the grain became higher in size with prolongation of annealing time; it lays in the range of 195 to 515Å.

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Formation of CuInSe2 and Cu(In,Ga)Se2 films by electrodeposition and vacuum annealing treatment

Cited by 52 publications

References 13 publications

Pulsed Electrochemical Deposition of CuInSe2 and Cu(In,Ga)Se2 Semiconductor Thin Films

Pulsed Electrochemical Deposition of CuInSe2 and Cu(In,Ga)Se2 Semiconductor Thin Films

Preparation of Cu(In,Ga)Se2 thin films by pulse electrodeposition

Annealing time effect on the properties of CuInSe2 grown by electrodeposition using two electrodes system

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